Semiconducting and Insulating Materials 1998. Proceedings of the
10th Conference on Semiconducting and Insulating Materials (SIMC-X)
(Cat. No.98CH36159)
Growth of GaN and AlGaN by high temperature vapor phase epitaxy
Fischer, S.; Anders, F.; Theis, M.; Steude, G.; Christmann, T.; Hofmann, D.M.; Meyer, B.K.
Page(s): 11-14
Digital Object Identifier 10.1109/SIM.1998.785066 Abstract
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Phosphorus and arsenic incorporation during chemical beam epitaxial
growth of strained GaAs1-xPx layers on GaAs(100)
substrates
Wildt, D.; Garcia, B.J.; Castano, J.L.; Piqueras, J.
Page(s): 15-20
Digital Object Identifier 10.1109/SIM.1998.785067 Abstract
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High resolution EL2 and resistivity topography of SI GaAs wafers
Wickert, M.; Stibal, R.; Hiesinger, P.; Jantz, W.; Wagner, J.; Jurisch, M.; Kretzer, U.; Weinert, B.
Page(s): 21-24
Digital Object Identifier 10.1109/SIM.1998.785068 Abstract
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Electrical and optical properties of annealed semi-insulating GaAs
grown by vertical zone melt technique
Fang, Z.-Q.; Reynolds, D.C.; Look, D.C.; Mier, M.G.; Jones, R.L.; Henry, R.L.
Page(s): 25-28
Digital Object Identifier 10.1109/SIM.1998.785069 Abstract
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Implant isolation study of In0.53Ga0.47As
Almonte, M.; Yu, K.M.; Haller, E.E.; Ridgway, M.C.; Hou, H.; Mirecki-Millunchick, J.
Page(s): 29-32
Digital Object Identifier 10.1109/SIM.1998.785070 Abstract
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Growth and orientation of GaN epilayers on NdGaO3 by
hydride vapor phase epitaxy
Wakahara, A.; Nishida, T.; Kawano, K.; Yoshida, A.; Seki, Y.; Oda, O.
Page(s): 33-36
Digital Object Identifier 10.1109/SIM.1998.785071 Abstract
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Improvement of uniformity and electrical properties of Fe-doped InP
by wafer annealing
Jimenez, J.; Avella, M.; de la Puente, E.
Page(s): 39-44
Digital Object Identifier 10.1109/SIM.1998.785072 Abstract
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Semi-insulating InP crystal wafers characterized by different
nondestructive techniques
Yamada, M.; Fukuzawa, M.; Akita, M.; Herms, A.; Uchida, M.; Oda, O.
Page(s): 45-48
Digital Object Identifier 10.1109/SIM.1998.785073 Abstract
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The electrical properties of irradiated silicon: semi-insulating
silicon
Jones, B.K.; McPherson, M.; Santana, J.
Page(s): 49-52
Digital Object Identifier 10.1109/SIM.1998.785074 Abstract
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Carbon in semi-insulating gallium arsenide: a comparative study
between FTIR, SSMS and CPAA
Alt, H.Ch.; Wiedemann, B.; Meyer, J.D.; Michelmann, R.W.; Bethge, K.
Page(s): 53-56
Digital Object Identifier 10.1109/SIM.1998.785075 Abstract
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Semi-insulating properties of GaAs with artificially buried W discs
Wernersson, L.-E.; Litwin, A.; Samuelson, L.; Seifert, W.
Page(s): 57-62
Digital Object Identifier 10.1109/SIM.1998.785076 Abstract
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Heteroepitaxial passivation of GaAs surfaces and its influence on
the photosensitivity spectra and recombination parameters of GaAs
epitaxial layers and semi-insulating materials
Karpovich, I.A.; Stepikhova, M.V.; Jantsch, W.
Page(s): 63-67
Digital Object Identifier 10.1109/SIM.1998.785077 Abstract
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The electrical properties of semi-insulating GaAs analysed as a
relaxation semiconductor
Jones, B.K.; Santana, J.; McPherson, M.
Page(s): 68-71
Digital Object Identifier 10.1109/SIM.1998.785078 Abstract
| Full Text: PDF (176 KB)
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New techniques for the characterization of defect levels in
semi-insulating materials
Longeaud, C.; Kleider, J.P.; Kaminski, P.; Kozlowski, R.; Pawlowski, M.; Cwirko, R.
Page(s): 72-75
Digital Object Identifier 10.1109/SIM.1998.785079 Abstract
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Current-voltage characteristic of n-i-n structures made of
semi-insulating GaAs
Particle detector grade semi-insulating GaAs: deep-level states
studied by admittance transient spectroscopy
Darmo, J.; Dubecky, F.
Page(s): 80-83
Digital Object Identifier 10.1109/SIM.1998.785081 Abstract
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Change of electrical and structural properties of
non-stoichiometric GaAs through Be doping
Luysberg, M.; Specht, P.; Thul, K.; Liliental-Weber, Z.; Weber, E.R.
Page(s): 87-92
Digital Object Identifier 10.1109/SIM.1998.785082 Abstract
| Full Text: PDF (392 KB)
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LT GaAs delta-doped with In: enhanced As excess, In-Ga intermixing,
As cluster array ordering
Bert, N.A.; Chaldyshev, V.V.; Suvorova, A.A.; Faleev, N.N.; Kunitsyn, A.E.; Musikhin, Yu.G.; Preobrazhenskii, V.V.; Putyato, M.A.; Semyagin, B.R.; Werner, P.
Page(s): 93-96
Digital Object Identifier 10.1109/SIM.1998.785083 Abstract
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The influence of growth and annealing conditions on the structural
quality of LT-GaAs layers grown on (111)B substrate by molecular beam
epitaxy
Guerret-Piecourt, C.; Toufella, M.; Bedel, E.; Puech, P.; Benassayag, G.; Bardinal, V.; Fontaine, C.; Claverie, A.; Carles, R.
Page(s): 97-100
Digital Object Identifier 10.1109/SIM.1998.785084 Abstract
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Ultrafast response times and enhanced optical nonlinearity in
annealed and Beryllium doped low-temperature grown GaAs
Haiml, M.; Prasad, A.; Morier-Genoud, F.; Siegner, U.; Keller, U.; Weber, E.R.
Page(s): 101-104
Digital Object Identifier 10.1109/SIM.1998.785085 Abstract
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An ion-implanted anti-resonant Fabry Perot saturable absorber for
passive mode-locking of solid state lasers
Lederer, M.; Luther-Davies, B.; Tan, H.; Jagadish, C.
Page(s): 105-108
Digital Object Identifier 10.1109/SIM.1998.785086 Abstract
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Influence of growth conditions on the As antisites, AsGa0 and AsGa+ concentrations in the low
temperature GaAs MBE growth: A first theoretical study
Krishnan, N.; Venkat, R.; Dorsey, D.L.
Page(s): 109-112
Digital Object Identifier 10.1109/SIM.1998.785087 Abstract
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Electrical properties and thermal stability of Be-doped
nonstoichiometric GaAs
Lutz, R.C.; Specht, P.; Zhao, R.; Weber, E.R.
Page(s): 113-117
Digital Object Identifier 10.1109/SIM.1998.785088 Abstract
| Full Text: PDF (228 KB)
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