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Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
  Date: 21-24 Apr 1992 
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Semi-insulating III-V Materials, Ixtapa, Mexico 1992

Page(s): iii-xiv
Abstract  | Full Text: PDF (200 KB)
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Device applications of semi-insulating III-V materials: the changing demand

Jay, P.R.
Page(s): 1-10
Abstract  | Full Text: PDF (736 KB)
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Recent changes in our understanding of EL2 in GaAs

Baraff, G.A.
Page(s): 11-18
Abstract  | Full Text: PDF (444 KB)
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Hetero-antisite defects in III-V materials

Omling, P.
Page(s): 19-28
Abstract  | Full Text: PDF (528 KB)
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Dynamic characteristics of dislocations and mechanical behaviour of III-V materials

Sumino, K.; Yonenaga, I.
Page(s): 29-38
Abstract  | Full Text: PDF (492 KB)
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Microdefect Studies of Fe-Doped Semi-Insulating Inp

Fornari, R.; Frigeri, C.; Weyher, J.L.; Krawczyk, S.K.; Krafft, F.; Mignoni, G.
Page(s): 39-44
Abstract  | Full Text: PDF (1024 KB)
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Carrier control by neutron-transmutation doping of semi-insulating GaAs

Benchiguer, T.; Mari, B.; Schwab, C.
Page(s): 45-50
Abstract  | Full Text: PDF (288 KB)
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Evidence for the Antisite Defect BAs in Si and B Co-Implanted and B Implanted Undoped Si Lec-Gaas Crystal

Wang, Z.G.; Wang, C.H.; Liu, Y.L.; Luo, Y.; Wan, S.K.; Li, G.H.; Lin, L.Y.
Page(s): 51-54
Abstract  | Full Text: PDF (160 KB)
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Properties of high-resistivity Li-diffused GaAs

Gislason, H.P.; Yang, B.H.; Linnarsson, M.
Page(s): 55-60
Abstract  | Full Text: PDF (312 KB)
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Semi-Insulating Inp Obtained by Co-Implantation of Mg and Ti

Salvi, M.; Viallet, J.E.; L'Haridon, H.; Favennec, P.N.; Gauneau, M.
Page(s): 61-66
Abstract  | Full Text: PDF (196 KB)
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The activation of MeV Si+ implants in SI-GaAs

Ji Chengzhou; Zhang Yanwen; Li Guohui; Wang Qi; Wang Wenxun
Page(s): 67-72
Abstract  | Full Text: PDF (308 KB)
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Current Issues in the Bulk Growth of S.i. III-V Materials

Muller, G.; Hirt, G.; Hofmann, D.
Page(s): 73-84
Abstract  | Full Text: PDF (788 KB)
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Low-dislocation-density 4" 0 Ø GaAs single crystal growth under arsenic atmosphere

Kawase, T.; Wakamiya, T.; Fujiwara, S.; Hashio, K.; Kimura, K.; Tatsumi, M.; Shirakawa, T.; Tada, K.
Page(s): 85-90
Abstract  | Full Text: PDF (400 KB)
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Incorporation/extraction of carbon and boron during semi-insulating LEC GaAs growth: roles of hydrogen and carbon monoxide in the puller atmosphere

Nishio, J.; Fujita, H.
Page(s): 91-96
Abstract  | Full Text: PDF (260 KB)
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Structural and electrical characteristics of undoped LEC GaAs crystals grown from slightly Ga-rich melts: a new approach

Weyher, J.L.; Frigeri, C.; Zanotti, L.; Alt, H.C.; van der Wel, P.; GaIl, P.
Page(s): 97-104
Abstract  | Full Text: PDF (704 KB)
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Improved uniformity of SI-VB GaAs by annealing

Freidenreich, B.E.; Bronsema, K.D.; Korzeniowski, Z.; Nykiel, B.; Francomano, D.; Moore, J.; Kremer, R.E.
Page(s): 105-110
Abstract  | Full Text: PDF (312 KB)
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Photolumineseence investigation of ingot- and wafer-annealing effects on semi-insulating GaAs

Ka, O.; Oda, O.; Makita, Y.; Yamada, A.
Page(s): 111-116
Abstract  | Full Text: PDF (276 KB)
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MBE heterostructure device instabilities related to interfacial carbon impurities

Gray, M.L.; Spector, M.; Yoder, J.D.
Page(s): 117-124
Abstract  | Full Text: PDF (372 KB)
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S.I. InP:Fe Hydride-Vpe for Mushroom Type Lasers

Gobel, R.; Janning, H.; Burkhard, H.
Page(s): 125-130
Abstract  | Full Text: PDF (244 KB)
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Hydride vapour phase epitaxial regrowth of SI-InP: Fe on non-planar surfaces for device fabrication

Lourdudoss, S.; Kjebon, O.
Page(s): 131-134
Abstract  | Full Text: PDF (360 KB)
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Relation between structure and lifetime of minority carriers -in MBE GaAs grown at low temperatures

Liliental-Weber, Z.; Gupta, S.; Smith, F.
Page(s): 135-140
Abstract  | Full Text: PDF (380 KB)
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Conductivity and Hall-effect measurements on MBE GaAs grown at low temperatures

Look, D.C.; Robinson, G.D.; Sizelove, J.R.; Stutz, C.E.
Page(s): 141-146
Abstract  | Full Text: PDF (248 KB)
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Infrared absorption of localized vibrational modes of silicon and beryllium in low temperature molecular beam epitaxial GaAs

Manasreh, M.O.; Stutz, C.E.; Solomon, J.S.; Mier, M.G.; Kaspi, R.; Evans, K.R.
Page(s): 147-151
Abstract  | Full Text: PDF (228 KB)
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Quantitative analysis of electron traps in annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy at low temperature with a novel zero quiescent bias voltage transient current spectroscopy technique

Lau, W.S.; Goo, C.H.; Chong, T.C.
Page(s): 153-156
Abstract  | Full Text: PDF (152 KB)
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Semi-Insulating Epitaxial Semiconductors: The Case of InP

Garcia, J.C.; Claverie, A.; Mimila-Arroyo, J.; Bourgoin, J.C.
Page(s): 157-166
Abstract  | Full Text: PDF (532 KB)
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