Semi-insulating InP grown with a CCl4 doping source
Stillman, G.E.; Gardner, N.F.; Hartmann, Q.J.; Stockman, S.A.; Baker, J.E.
Page(s): 3-8
Digital Object Identifier 10.1109/SIM.1996.570863 Abstract
| Full Text: PDF (352 KB)
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Annealing-related conductivity conversion in lightly Fe-doped
n-type InP wafers
Fornari, R.; Zappettini, A.; Gombia, E.; Mosca, R.; Curti, M.
Page(s): 9-12
Digital Object Identifier 10.1109/SIM.1996.570865 Abstract
| Full Text: PDF (268 KB)
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Iron doped semi-insulating GaInP lattice matched to GaAs for device
fabrication
Lourdudoss, S.; Holz, R.
Page(s): 13-16
Digital Object Identifier 10.1109/SIM.1996.570867 Abstract
| Full Text: PDF (248 KB)
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First results of s.i. GaAs single crystal growth applying the
vapour pressure controlled Czochralski method
Neubert, M.; Seifert, M.; Rudolph, P.; Trompa, K.; Pietsch, M.
Page(s): 17-20
Digital Object Identifier 10.1109/SIM.1996.570868 Abstract
| Full Text: PDF (260 KB)
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Control of stoichiometry dependent defects in low temperature GaAs
Luysberg, M.; Sohn, H.; Prasad, A.; Fujioka, H.; Klockenbrink, R.; Weber, E.R.
Page(s): 21-26
Digital Object Identifier 10.1109/SIM.1996.570869 Abstract
| Full Text: PDF (324 KB)
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Characterization of conduction in LTG-GaAs
Bourgoin, J.C.; Khirouni, K.; Nagle, J.
Page(s): 27-30
Digital Object Identifier 10.1109/SIM.1996.570870 Abstract
| Full Text: PDF (164 KB)
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Control of spatial distribution of As clusters in LT GaAs by indium
delta doping
Chaldyshev, V.V.; Bert, N.A.; Faleev, N.N.; Kunitsyn, A.E.; Tret'yakov, V.V.; Preobrazhenskii, V.V.; Putyato, M.A.; Semyagin, B.R.
Page(s): 31-36
Digital Object Identifier 10.1109/SIM.1996.570871 Abstract
| Full Text: PDF (476 KB)
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Conductance properties of as-grown and annealed MBE GaAs layers
grown at temperatures between 200 and 420°C
Kordos, P.; Betko, J.; Morvic, M.; Novak, J.; Forster, A.
Page(s): 37-40
Digital Object Identifier 10.1109/SIM.1996.570872 Abstract
| Full Text: PDF (220 KB)
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Ultrafast carrier trapping and high resistivity of MeV energy ion
implanted GaAs
Jagadish, C.; Tan, H.H.; Krotkus, A.; Marcinkevicius, S.; Korona, K.; Jasinski, J.; Kaminska, M.
Page(s): 41-44
Digital Object Identifier 10.1109/SIM.1996.570873 Abstract
| Full Text: PDF (204 KB)
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Investigation of the solid-phase epitaxial growth of amorphized
GaAs with in-situ and ex-situ electron microscopy
Belay, K.B.; Ridgway, M.C.; Llewellyn, D.J.
Page(s): 45-50
Digital Object Identifier 10.1109/SIM.1996.570875 Abstract
| Full Text: PDF (372 KB)
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Observations of low frequency admittance between isolated GaAs
structures formed by ion implantation and by epitaxy on epitaxial buffer
layers prepared at high and low temperatures
Boroumand, F.A.; Khalid, A.H.; Hopkinson, M.; Swanson, J.G.
Page(s): 51-54
Digital Object Identifier 10.1109/SIM.1996.570876 Abstract
| Full Text: PDF (224 KB)
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Zn diffusion-induced disordering in semi-insulating, p-doped, and
n-doped GaAs/AlGaAs multilayered structures: a comparative study
Nguyen Hong Ky
Page(s): 55-58
Digital Object Identifier 10.1109/SIM.1996.570877 Abstract
| Full Text: PDF (232 KB)
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A comparative study of the defects in Fe-doped or undoped
semi-insulating InP after high temperature annealing
Cherkaoui, K.; Kallel, S.; Marrakchi, G.; Karoui, A.
Page(s): 59-62
Digital Object Identifier 10.1109/SIM.1996.570878 Abstract
| Full Text: PDF (204 KB)
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Mesoscopic homogenization of semi-insulating GaAs by two-step post
growth annealing
Hoffmann, B.; Jurisch, M.; Kissinger, G.; Kohler, A.; Kuhnel, G.; Reinhold, T.; Siegel, W.; Weinert, B.
Page(s): 63-66
Digital Object Identifier 10.1109/SIM.1996.570879 Abstract
| Full Text: PDF (388 KB)
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Annealing characteristics of native defects in
low-temperature-grown MBE GaAs
Darmo, J.; Dubecky, F.; Kordos, P.; Forster, A.
Page(s): 67-70
Digital Object Identifier 10.1109/SIM.1996.570880 Abstract
| Full Text: PDF (240 KB)
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On relation between detection parameters of SI GaAs particle
detectors and physical properties of starting materials
Dubecky, F.; Darmo, J.; Krempasky, M.; Betko, J.; Besse, I.; Pikna, M.; Satka, A.; Oswald, J.; Pelfer, P.G.
Page(s): 71-74
Digital Object Identifier 10.1109/SIM.1996.570881 Abstract
| Full Text: PDF (256 KB)
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Growth of GaN single crystals and properties of homoepitaxial MOCVD
layers
Baranowski, J.M.; Porowski, S.
Page(s): 77-84
Digital Object Identifier 10.1109/SIM.1996.570882 Abstract
| Full Text: PDF (376 KB)
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Structural defects in GaN
Ruvimov, S.; Liliental-Weber, Z.
Page(s): 85-88
Digital Object Identifier 10.1109/SIM.1996.570885 Abstract
| Full Text: PDF (740 KB)
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Strain effects in GaN thin film growth
Kruger, J.; Kisielowski, C.; Suski, T.; Ruvimov, S.; Liliental-Weber, Z.; Ager, J.W., III; Rubin, M.; Weber, E.R.
Page(s): 89-92
Digital Object Identifier 10.1109/SIM.1996.570886 Abstract
| Full Text: PDF (228 KB)
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Temperature dependence of the radiative recombination in GaN
Bergman, J.P.; Monemar, B.; Amano, H.; Akasaki, I.
Page(s): 93-96
Digital Object Identifier 10.1109/SIM.1996.570887 Abstract
| Full Text: PDF (220 KB)
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Phonon dispersion in gallium nitride
Demangeot, F.; Frandon, J.; Renucci, M.A.; Beaumont, B.; Gibart, P.
Page(s): 97-100
Digital Object Identifier 10.1109/SIM.1996.570889 Abstract
| Full Text: PDF (204 KB)
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Excitons in III-V strained marginal systems: dispersion relations
and absorption processes
Bigenwald, P.; Gil, B.; Konczewicz, L.; Testud, P.; Aulombard, R.L.
Page(s): 101-104
Digital Object Identifier 10.1109/SIM.1996.570903 Abstract
| Full Text: PDF (236 KB)
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An electrical and Raman spectroscopic study of
a-GaAs1-xNx/Si heterostructures
Aguir, K.; Bandet, J.; Lollman, D.; Roumiguieres, B.; Carchano, H.
Page(s): 105-110
Digital Object Identifier 10.1109/SIM.1996.570907 Abstract
| Full Text: PDF (320 KB)
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Electrical and optical properties of
ZnxMg1-xSe/ZnTe and
ZnxMg1-xSe/GaAs heterojunctions
Bala, W.; Glowacki, G.; Gapinski, A.
Page(s): 111-114
Digital Object Identifier 10.1109/SIM.1996.570911 Abstract
| Full Text: PDF (244 KB)
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