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Electron Devices Meeting, 1978 International

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Electron Devices Meeting, 1978 International

Date 4-6 Dec. 1978

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Title History

[Front cover and table of contents]

Fine line lithography systems for VLSI

GaAs integrated circuits: MSI status and VLSI prospects

Sensor development in the microcomputer age

Depletion type n-MOST using lateral diffusion of P-wells in C-MOS process

A nonlinear CAD model for the depletion-mode IGFET

A normally-off type buried channel MOSFET for VLSI circuits

Geometry effects in VMOS transistors

Diffusion current effects in DMOS transistors

A precise model of the transient response of MNOS memory capacitors

Two-dimensional calculation of avalanche breakdown voltage in deeply-depleted MOS capacitors

Sub-micron polysilicon Gate CMOS/SOS technology

The evolution of FET technology for VLSI applications

One-micrometer electron-beam lithography FET technology

Electron beam lithography for 1 micron FET logic circuit fabrication

Fabrication and performance of submicron silicon MESFET

Characteristics of short channel MOSFETs in the punch-through current mode

Silicon photovoltaic cells in thermophotovoltaic energy conversion

The effects of surface potential on surface recombination and the performance of silicon solar cells

An analytical model for the edge-illuminated silicon solar cell under concentrated sunlight

A low-temperature CVD oxide process for inversion layer-MIS solar cells

Relating photovoltaic output and spectral response of amorphous, polycrystalline, ribbon, epitaxial and single-crystal MIS solar cells

Interface state measurements and computer simulation studies of MIS solar cells

Life testing and stability of SnO2/n-Si solar cells

Diaphragm formation and pressure sensitivity in batch-fabricated silicon pressure sensors

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