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Electron Devices Meeting, 1970 International

Date 28-30 Oct. 1970

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Displaying Results 1 - 25 of 138
  • [Front cover and table of contents]

    Publication Year: 1970, Page(s): c1
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    Freely Available from IEEE
  • Light-emitting diodes

    Publication Year: 1970, Page(s):12 - 14
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (91 KB)

    There is a growing interest in the development of devices that can efficiently convert electrical energy into light, particularly visible light. Of special interest is the possibility that such devices may be electrically and, hopefully, even physically compatible with existing electrical devices, particularly integrated circuits. Currently available semiconductor light-emitting diodes approach th... View full abstract»

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  • Microwave transistors - From small signal to high power

    Publication Year: 1970, Page(s): 12
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    New technologies have emerged in the development of high-frequency transistors, and some of the old technologies have been considerably refined and extended. New equipment and measurement techniques have been perfected that allow rapid and accurate device characterization at microwave frequencies. As a result of these developments, the list of small-signal and power transistors available for use a... View full abstract»

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  • Rates of energy loss by electrons in solids

    Publication Year: 1970, Page(s): 12
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (81 KB)

    The rate at which energetic electrons lose energy to a solid via phonons and various electronic excitations plays a key role in such devices as solid-state photomultipliers, Gunn oscillators, avalanche diodes, cold cathodes, negative-affinity emitters, and acoustoelectric amplifiers, and in such phenomena as electron mobility, current saturation, and dielectric breakdown. A semiclassical model for... View full abstract»

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  • Performance limits of bucket-brigade shift registers

    Publication Year: 1970, Page(s):16 - 18
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (168 KB)

    Studies of integrated IGFET bucket-brigade charge-transfer shift registers show that charge-transfer efficiency depends on IGFET output conductance, on magnitude of the transferred charge, and on clock voltage waveforms. In a 64-device register, charge-transfer efficiency of 99.8% per stage has been achieved at 1 MHz with a structure that minimizes IGFET output conductance. An important operating ... View full abstract»

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  • Compact COS/MOS 256-bit random-access memory

    Publication Year: 1970, Page(s): 16
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    A 256-bit static COS/MOS (complementary symmetry MOS) random-access memory chip has been fabricated with a 30 mil2cell and a chip size (0.110 × 0.128 inch) basically comparable to that of single-channel static MOS memories. Complementary MOS layouts with both p-channel and n-channel MOS transistors have generally required more area than single-channel MOS devices. A favorable memor... View full abstract»

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  • A 1024 bit N-channel MOS read-write memory chip

    Publication Year: 1970, Page(s): 16
    Cited by:  Papers (1)
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    The Cogar 1024-bit MOS read-write memory chip is fully decoded, has a 100-ns access time, and is only 125 × 125 mils in size. This small size is made possible by the use of a 4-device memory cell and dimensional tolerances as small as 0.15 mil. The chips are fabricated from a 2.25-inch-diameter wafer that consists of a low-resistivity p-type substrate covered by a high-resistivity p-type epit... View full abstract»

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  • The MNOS bipolar transistor

    Publication Year: 1970, Page(s): 18
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (81 KB)

    Charge-storage effects in MNOS structures have been investigated with regard to application in programmable read-only semiconductor memories utilizing the insulated-gate field-effect transistor as the active circuit component. The surface-potential dependence of both base and collector current in a suitably designed bipolar transistor, however, can be combined with the charge storage effects of th... View full abstract»

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  • A trim bipolar charge storage memory

    Publication Year: 1970, Page(s): 18
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (81 KB)

    A bipolar stored-charge memory cell will be described that consists of a single transistor with an MOS capacitor between emitter and ground. The transistor serves as a bidirectional switch allowing charge to selectively flow into or out of the storage capacitor. The cell requires periodic refreshing of the stored charge since electron-hole generation in the depletion region of the emitter tends to... View full abstract»

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  • A high-reliability plastic encapsulation for transistors

    Publication Year: 1970, Page(s): 20
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (89 KB)

    A description of the design of a reliable, inexpensive, transfer-molded, silicone plastic transistor encapsulation is given. The materials selection was based upon the needs of reliability testing and suitability for requisite manufacturing processes. The dimensions of the plastic encapsulation, which replaces the TO-18 hermetically sealed metal-glass encapsulation, were determined by analyzing th... View full abstract»

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  • Arsenic emitter for gold-doped shallow-junction transistors

    Publication Year: 1970, Page(s): 20
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (90 KB)

    It has been known that a reduction in the isolation capacitance and the storage time of an integrated bipolar transistor could be achieved by the introduction of gold in silicon. The process of gold introduction requires a final high-temperature cycle after emitter diffusion to reactivate the gold, which in turn makes it difficult to control the base width of a shallow-junction transistor with a p... View full abstract»

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  • Arsenic emitter high-performance transistor

    Publication Year: 1970, Page(s): 22
    Cited by:  Papers (1)
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    Silicon n-p-n transistors with gain-bandwidth, fT, of 13 GHz and current gain β of 280 have been fabricated by using arsenic capsule diffusion to produce the emitter region. Devices have been fabricated With the same epitaxial and diffusion processes up to emitter diffusion, and then emitter regions were formed by either arsenic or phosphorus diffusion. For the same mask geometry, ... View full abstract»

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  • Detailed modeling of nonlinear distortion in bipolar transistors

    Publication Year: 1970, Page(s):22 - 24
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (200 KB)

    Nonlinear distortion in a bipolar transistor amplifier is calculated using a new compact model to represent the transistor. Nonlinear distortion is particularly important for transistor applications in long-haul analog communications repeater amplifiers. In that case the internally generated output powers at the second and third harmonics relative to the power at the fundamental frequency should b... View full abstract»

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  • Physical origins of burst noise in transistors

    Publication Year: 1970, Page(s): 24
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (94 KB)

    Burst noise in bipolar junction transistors has been attributed to leakage current through crystallographic defects located in proximity to the base-emitter junction. The current is modulated by the random occupancy of a single flaw located near the defects. The previous theoretical work has only described defects located in the emitter-base space-charge region away from the surface. This paper ex... View full abstract»

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  • Some factors influencing 1/F noise in silicon planar transistors

    Publication Year: 1970, Page(s): 24
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (94 KB)

    1/ f noise in n-p-n silicon planar transistors is shown to have two sources. One of these sources is associated with the recombination centres that determine low-current hFEand are situated where the emitter-base depletion region meets the silicon-silicon-dioxide interface. The same relationship between hFEand 1/ ... View full abstract»

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  • Optimization of transistor neutron tolerance

    Publication Year: 1970, Page(s): 26
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (83 KB)

    A detailed analysis has been performed for neutron-irradiated p+-n junction diodes to determine the influence of the recombination model, doping profile, and operating point on the minority carrier recombination throughout the devices. The calculations give the recombination rate, carrier distributions, and electric field in the various device regions and separate the device current int... View full abstract»

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  • High average power pulse generation in CW Nd:YAG

    Publication Year: 1970, Page(s): 28
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (78 KB)

    Over 1000 watts of CW power has been generated with a multisection krypton arc lamp pumped Nd:YAG laser. Applying electro-optical Q-switching techniques that are unique to this high-gain CW device, pulses with peak powers greater than 5 megawatts have been produced at repetition frequencies of 400G pps. The dynamics of the rapid pulse growth results in a pseudo-mode-locked pulse envelope. Through ... View full abstract»

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  • A 100-watt average power liquid laser

    Publication Year: 1970, Page(s):28 - 30
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    A pulsed liquid laser operating at 5 pulses per second and an average power of 100 watts has been developed. The laser material consists of Nd-trifluoroacetate dissolved in POCl3acidified with ZrCl4. The concentration of Nd is 0.3 mole/liter The fluorescence lifetime of the solution is in excess of 300 µsec and the dynamic loss in the circulating medium is 0.0035 cm... View full abstract»

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  • Erbium laser materials and systems

    Publication Year: 1970, Page(s): 28
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    The results of an erbium laser materials and systems investigation are presented. Studies include optical properties and laser system parameters of yb3+-sensitized YAG:Er and glass: Er and their relationship to the optimization of laser host materials and laser system design. Optical properties discussed include absorption, fluorescence, and excitation spectra, as well as fluorescence l... View full abstract»

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  • Diode-pumped YAG-Nd lasers

    Publication Year: 1970, Page(s): 30
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (90 KB)

    In this paper we report on work, using both cooled (\sim77\deg K) and room-temperature incoherent GaAs1-xPxdiodes (obtained from Texas Instruments, Inc.), that demonstrates the feasibility of obtaining room-temperature CW operation of a YAG:Nd laser with presently available diodes. Measurements have been made with diodes emitting at 0.8... View full abstract»

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  • High-repetition-rate low-energy-pulse pumping of Nd-YAG lasers

    Publication Year: 1970, Page(s): 30
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (90 KB)

    Several recent studies have compared xenon and krypton discharges as optical pumps for CW Nd:YAG lasers. Above 50 joules, xenon is reportedly more efficient, and in the 15-50 joule range, krypton has been found to be more efficient. We have compared the laser efficiencies obtained using pulsed discharges in xenon and krypton at pressures up to 3000 Torr and repetition rates up to 350 pps. Input en... View full abstract»

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  • Compensation for thermally induced birefringence in Nd-YAG lasers

    Publication Year: 1970, Page(s): 32
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (56 KB)

    Thermal gradients that occur ill optically pumped YAG lasers result in bifocusing and birefringence. Methods to compensate for these induced aberrations have been suggested by Osterink and Foster. We have employed one of these methods that uses 90° rotation of the polarization. A crystal quartz rotator is placed between two pumped YAG rods so that the part of the mode that is radially polariz... View full abstract»

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  • Techniques for fabricating gun electron injection semiconductor hybrid amplification devices

    Publication Year: 1970, Page(s):34 - 36
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (168 KB)

    Techniques have been developed that have made it possible to combine (in a miniature ceramic-metal vacuum envelope) a boron-implanted silicon diode, which serves as the output end of the structure, and a grid-controlled planar electron-tube structure, which is used as an electron-beam input source. View full abstract»

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  • Picosecond-rise-time pulse applications of electron-beam-semiconductor devices

    Publication Year: 1970, Page(s): 34
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (84 KB)

    In this paper basic analytical and experimental results are presented for ultrafast amplifiers, pulse generators, and pulse-detection systems in which a modulated electron beam controls the current in a semiconductor target. The lumped target amplifier is discussed frst, and results are summarized from a simplified analysis of target response to step-function beam excitation. The optimization of a... View full abstract»

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  • Computer simulation of large-signal characteristics of an electron-beam-excited semiconductor

    Publication Year: 1970, Page(s):36 - 38
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (176 KB)

    A computer program has been developed that permits detailed calculations of the electrical output and corresponding internal effects in the operation of an electron-beam-excited semiconductor device. The computer analysis complements the simple analytical treatment of target operation previously available, and makes possible the evaluation of high-level target operation with any or all of the foll... View full abstract»

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