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Electron Devices Meeting, 1968 International

Date 23-25 Oct. 1968

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Displaying Results 1 - 25 of 141
  • [Front cover and table of contents]

    Publication Year: 1968 , Page(s): c1
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    Freely Available from IEEE
  • III-V compounds and their applications

    Publication Year: 1968 , Page(s): 12
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    The III-V compounds and their alloys offer a unique combination of new electrical and optical properties. The available variety of band structure allows these materials to compete for electronic and optical functions not accessible to the elemental semiconductors. View full abstract»

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  • Trends in silicon device technology

    Publication Year: 1968 , Page(s): 12
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    The present status of silicon device technology is reviewed in order to point out its limitations. The combination of melt-doping, epitaxial growth, and oxide-masked diffusion allows, at least in principle, the construction of about any desired impurity configuration within the silicon crystal. Our present understanding of the silicon-silicon oxide surface allows the design and control of the impo... View full abstract»

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  • Reflections on early germanium and silicon single crystal research

    Publication Year: 1968 , Page(s): 12
    Cited by:  Papers (1)
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    This talk will recall some of the research on germanium and silicon single crystals in the early days of the transistor. View full abstract»

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  • Electro-optic materials

    Publication Year: 1968 , Page(s): 14
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    The effective use of coherent optical radiation in communications requires low power, wide bandwidth modulators. The most promising modulator materials are those with refractive indices sensitive to electric field. Certain of these materials are also useful in nonlinear optical applications such as optical frequency doublers and optical parametric oscillators. The search for efficient modulator, f... View full abstract»

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  • High efficiency operation of IMPATT diodes

    Publication Year: 1968 , Page(s): 16
    Cited by:  Papers (1)
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    A new mode of microwave power generation in avalanche diodes, with efficiencies greatly exceeding those obtainable from the IMPATT mode, has recently been discovered. The first experimental observation of these high efficieneies was reported by H. J. Prager, K. K. N. Chang and S. Weisbrod (RCA Laboratories), who observed 60% efficiencies at frequencies below 1 GHz with a silicon diode in pulsed op... View full abstract»

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  • Performance and theory of avalanche resonance pumped IMPATT oscillators

    Publication Year: 1968 , Page(s): 16
    Cited by:  Papers (4)
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    Avalanche diodes in multiresonant states yielding 20% efficiency at 3 GHz are described and analyzed in this paper. The silicon p+-n-n+punchthrough structure of interest has a nearly abrupt junction and a 95 volt breakdown potential. Optimum transit-time performance at 800amps/cm2is 300 mw with 10% efficiency at 9 GHz in a double-slug coaxial resonator. Under prope... View full abstract»

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  • Approximate large-signal analysis of IMPATT oscillators

    Publication Year: 1968 , Page(s): 18
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    Considerable insight into the large-signal operating characteristics of IMPATT oscillators has recently been obtained from detailed numerical calculations involving a complete modelling of the physical processes taking place in the diode. However, execution time of existing computer programs is so long that extensive parameter studies are impractical. We present here a parameter study using a tech... View full abstract»

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  • Determination of germanium ionization coefficients from small signal IMPATT diode characteristics

    Publication Year: 1968 , Page(s): 18
    Cited by:  Papers (1)
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    Small signal measurements of germanium IMPATT diode admittance in the frequency range from 2 to 8 GHz were taken as a function of current density. These measurements were compared with the small signal admittance calculated using the model developed by Gummel, Scharfetter and Blue. The ionization coefficients and saturated velocities for electrons and holes have been chosen to provide reasonable a... View full abstract»

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  • Effect of nonsaturated drift velocity on avalanche-diode performance

    Publication Year: 1968 , Page(s): 18
    Cited by:  Papers (1)
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    It has become evident from a large-signal analysis of a Read-diode oscillator that in order to obtain high power and efficiency, the r-f voltage swing across the diode becomes comparable to the breakdown voltage and thus the field in the drift region becomes quite low during a part of the r-f cycle. This, of course, results in a nonsaturated or field-dependent velocity in the drift region which es... View full abstract»

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  • Bipolar integrated circuits formed in P-type epitaxial layers

    Publication Year: 1968 , Page(s): 20 - 22
    Cited by:  Papers (3)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (200 KB)  

    A new integrated circuit fabrication scheme, using transistors with p-type epitaxially grown base layers was proposed by the authors at the 1968 ISSCC. Transistor-transistor logic gates having a packing density of 1.1 \times 10^{5} gates/in2have been fabricated using this scheme. The gates have a power × delay of 8 picojoules and a delay of 2... View full abstract»

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  • Self-isolated bipolar transistors in integrated circuits

    Publication Year: 1968 , Page(s): 20
    Cited by:  Papers (4)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (112 KB)  

    The possibility of implementing bipolar transistors, and hence diodes, in integrated circuits in a self-isolated form has been proposed by one of the authors and independently by B. T. Murphy et al. The present paper is concerned with some of the experimental results of the proposed structures. A p-type epitaxial layer is grown on a p-type substrate where localized n+-layers are buried,... View full abstract»

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  • Complementary bipolar transistors for monolithic structures

    Publication Year: 1968 , Page(s): 20
    Cited by:  Papers (1)
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    A technique is described by which it is now possible to fabricate completely complementary PNP/NPN transistors in a monolithic structure. Until now it has not been possible to make PNP devices with high fTand good hFEin a monolithic structure which are compatible with NPN devices. Both the NPN and PNP transistors have parameters which are identical to those obtained with disc... View full abstract»

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  • Insulated gate field effect transistor integrated circuits with silicon gates

    Publication Year: 1968 , Page(s): 22
    Cited by:  Papers (6)
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    The Silicon Gate Technology is a new approach to fabricating insulated gate field effect transistor circuits, in which the metal gate electrode is replaced by a doped, silicon electrode. The work function difference between the gate electrode and semiconductor bulk will now be determined by the doping of the gate electrode. This leads to normally off p-channel devices with threshold voltages typic... View full abstract»

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  • Complementary MOS-bipolar structure

    Publication Year: 1968 , Page(s): 22 - 24
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    Medium and large scale integrated arrays employing complementary MOS transistors, are capable of driving low capacitive loads only. An n-p-n bipolar transistor with an isolated collector is needed when an integrated circuit is required to drive large capacitive loads without deterioration in the maximum operating frequency. View full abstract»

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  • P+ π P+ MOSFETS: A new approach to complementary integrated circuits

    Publication Year: 1968 , Page(s): 22
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    P-channel enhancement mode MOS field effect transistors have been fabricated on high resistivity P-type (π) silicon substrates. A high off-state impedance can be achieved with zero gate voltage if the substrate resistivity is sufficiently high so that the P+π low-high junctions formed by the diffusion of the drain and source regions exhibit the desired rectifying characteristics. N-chann... View full abstract»

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  • MOS transistors and integrated circuits with plasma-grown aluminum oxide

    Publication Year: 1968 , Page(s): 24
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    Various studies have been carried out to determine whether SiO2could be replaced by improved insulators in MOS structures and integrated circuits. These studies have been directed toward improving device performance and reducing the requirements for the "ultra clean" technology presently employed. In this paper we report on MOS transistors and integrated circuits fabricated using plasma... View full abstract»

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  • A non-reentrant crossed-field amplifier with cycloiding injected beam

    Publication Year: 1968 , Page(s): 26
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    Non-reentrant, injected-beam, crossed-field amplifiers usually employ a thin, laminar beam positioned well above the sole electrode. In operation, the beam is gradually bunched by a phase-focusing action. This paper describes the analysis and demonstration of such an amplifier, with one important difference: the electrons of the beam have random, cycloidal trajectories extending to the sole instea... View full abstract»

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  • A high power UHF crossed-field amplifier

    Publication Year: 1968 , Page(s): 26
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    A forward wave UHF reentrant beam crossed-field amplifier has been developed to deliver 250 kw pulse output over the 406 to 450 MHz range. This amplifier is dc operated and uses a cold secondary emission cathode. Amplification is initiated by the input RF drive pulse and is terminated by a voltage pulse applied to a control electrode, which eliminates the need for a high power pulse modulator. Thi... View full abstract»

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  • Long pulse, 500 kW, wide band crossed field amplifier

    Publication Year: 1968 , Page(s): 26 - 28
    Cited by:  Papers (1)
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    This paper describes a tube designed for wide band, long pulse operation at S-band with an output peak power higher than 500 kw and an average power of 5 kw. This tube has a bandwidth of 350 MHz at 1 db, a large signal gain of 17 db, an efficiency of 50% and a signal-to-noise ratio better than 3O db. The main studies are: a water-cooled delay line structure having low dispersion and low spurious e... View full abstract»

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  • Noise, distortion and transmission characteristics of an M-BWO

    Publication Year: 1968 , Page(s): 28
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    Performance measurements have been made on an experimental FM transmitter using M-BWO. The attractive features of this oscillator are variable power control, high efficiency, wideband modulation capability and light weight. The lack of published data describing the performance of the M-BWO in terms of spectral noise distribution, spurious signals, two-tone third-order distortion, noise power ratio... View full abstract»

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  • A 3.2 millimeter high power magnetron

    Publication Year: 1968 , Page(s): 28
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    This paper describes a 3.2 mm wavelength, rising sun cavity, pulse magnetron capable of delivering up to 10 kw peak rf power at pulse widths between 5 and 200 nanoseconds at duty cycles up to 0.0002. The reliability of the rising sun design and the high current density Philips' type impregnated cathode ensure relatively long tube life. Modulator design is simplified by the low input capacitance of... View full abstract»

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  • Studies of crossed field amplifiers relating to stability, noise and electron guns

    Publication Year: 1968 , Page(s): 28
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    This paper is presented in two parts: A.) Considerations of Stability and Noise Improvement of Crossed Field Amplifiers, and B.) Beam Analyzer Measurements of a Wide Dynamic Range Crossed Field Gun. A.) The authors have confirmed that in the absence of drive signal, oscillation instabilities in high power crossed field amplifiers are a forward wave phenomenon. Analyses suggest that these instabili... View full abstract»

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  • Increased rate of rise of voltage on high power cathode pulsed crossed field devices

    Publication Year: 1968 , Page(s): 30
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    This paper discusses the maximum rate of rise of voltage (RRV) which can be applied to the cathode of a crossed field device. Recent developments in high peak power, narrow pulse width transmitters have indicated that the established criteria for RRV are not completely valid. Experience has shown that the RRV specified by crossed field tube designers is not a limitation inherent in the devices the... View full abstract»

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  • The spin magnetron, a simple and compact solution to broad-band frequency-agility radar

    Publication Year: 1968 , Page(s): 30
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    This paper describes the construction and principle of operation of spin-tuned magnetrons, such as they have been developed at Philips, based on patented ideas. Emphasis has been put on high-power magnetrons for X- and Ku-band radars. Magnetron data for these frequency bands are presented together with calculated data for lower frequency bands. View full abstract»

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