Date 14-16 June 2005
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Displaying Results 1 - 25 of 92
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A look into the future of nanoelectronics
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PDF (866 KB)
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High density and fully compatible embedded DRAM cell with 45nm CMOS technology (CMOS6)
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PDF (774 KB)
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Novel 20nm hybrid SOI/bulk CMOS technology with 0.183μm2 6T-SRAM cell by immersion lithography
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PDF (543 KB)
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Feasibility study of a novel molecular-pore-stacking (MPS), SiOCH film in fully-scale-down, 45nm-node Cu damascene interconnects
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PDF (654 KB)
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Dramatically enhanced performance of recessed SiGe source-drain PMOS by in-situ etch and regrowth technique (InSERT)
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PDF (784 KB)
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Investigation of CMOS devices with embedded SiGe source/drain on hybrid orientation substrates
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PDF (492 KB)
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Vertex channel array transistor (VCAT) featuring sub-60nm high performance and highly manufacturable trench capacitor DRAM
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PDF (406 KB)
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S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm DRAM feature size and beyond
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PDF (838 KB)
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Scaled IT-Bulk devices built with CMOS 90nm technology for low-cost eDRAM applications
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PDF (755 KB)
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Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devices
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PDF (424 KB)
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HfO2/metal stacks: determination of energy level diagram, work functions & their dependence on metal deposition
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PDF (294 KB)
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Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications
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PDF (569 KB)
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Dual metal gate process by metal substitution of dopant-free polysilicon on high-K dielectric
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PDF (478 KB)
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Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO2 gate dielectric
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PDF (474 KB)
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Strained-silicon MOSFETs of low leakage current and high breakdown voltage for analog applications
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PDF (382 KB)
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High capacitance density (> 17 fF/μm2) Nb2O5-based MIM capacitors for future RF IC applications
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PDF (465 KB)
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A comprehensive study of fully-silicided gates to achieve wide-range work function differences (0.91 eV) for high-performance CMOS devices
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PDF (327 KB)


