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Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on

Date 24-27 Oct. 2004

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Displaying Results 1 - 25 of 149
  • [Front matter]

    Publication Year: 2004
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  • Conference map - Purdue University

    Publication Year: 2004, Page(s): 0_2
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  • Front matter

    Publication Year: 2004, Page(s): 0_3
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  • [Copyright notice]

    Publication Year: 2004, Page(s): 0_4
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  • Table of contents

    Publication Year: 2004, Page(s):0_5 - 0_11
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  • Blank page

    Publication Year: 2004, Page(s): 0_12
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  • International Workshop on Computational Electronics (IWCE - 10) - Program

    Publication Year: 2004, Page(s):1 - 267
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  • Evolution of current transport models for engineering applications

    Publication Year: 2004, Page(s):20 - 21
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (115 KB)

    The continuous minimum feature size reduction of microelectronic devices, institutionalized by the ITRS roadmap, has been partly enabled by the support of TCAD tools. Device modeling tools have been established on base of the ground-breaking work of Scharietter and Gummel (1969). Since then, numerous transport models of increasing complexity have been proposed. Modern microelectronic devices are c... View full abstract»

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  • A Legendre polynomial solver for the Langevin Boltzmann equation

    Publication Year: 2004, Page(s):22 - 23
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (101 KB)

    Due to the proliferation of wireless and other RF applications, noise simulation has become an important topic of TCAD. Although the so-called physical Monte Carlo (MC) method inherently contains electronic noise, this time-domain based method is far too slow for most noise calculations, which are performed in the GHz range or below, because the CPU time is at least inversely proportional to the m... View full abstract»

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  • Efficient simulation of the full Coulomb interaction in three dimensions

    Publication Year: 2004, Page(s):24 - 25
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (146 KB)

    The continued scaling of MOSFETs into the nano-scale regime requires refined models for carrier transport due to, e.g., unintentional doping in the active channel region which gives rise to threshold voltage and on-state current fluctuations. Therefore every transport simulator which is supposed to accurately simulate nano-devices must have a proper model for the inclusion of the Coulomb interacti... View full abstract»

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  • A physically-based analytic model for stress-induced hole mobility enhancement

    Publication Year: 2004, Page(s):26 - 27
    Cited by:  Papers (5)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (124 KB)

    A novel computationally efficient model for stress-modulated hole mobility, suitable for a continuum transport simulators, has been developed and implemented. The physically-based model captures bandstructure modulation due to stress, and reproduces the experimental mobility behavior over a wide range of stress, electric fields, and current directions. The model is validated and calibrated using a... View full abstract»

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  • A unified modeling of NBTI and hot carrier injection for MOSFET reliability

    Publication Year: 2004, Page(s):28 - 29
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (127 KB)

    A unified theory of negative bias temperature instability (NBTI) and hot carrier injection (HCI) induced interface trap generation is developed to simultaneously explain the time-exponents of both phenomena. Characteristic time-dependence of interface trap generation (/spl Delta/N/sub IT/ /spl sim/ t/sup n/) due to NBTI (/spl sim/t/sup 0.25/) and HCI (/spl sim/ t/sup 0.5/) degradation are shown. O... View full abstract»

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  • Simulations of sub-100nm strained Si MOSFETs with high-k gate stacks

    Publication Year: 2004, Page(s):30 - 31
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (137 KB)

    Scaling of Si MOSFETs beyond the 90 nm technology node requires performance boosters in order to sustain the annual increase of intrinsic speed of high-performance (2003). One potential solution is transport enhanced FETs using strained Si channels. High-k dielectrics required to reduce the gate leakage current for equivalent oxide thickness (EOT) are expected to replace SiO/sub 2/ around the 65 n... View full abstract»

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  • Influence of ballistic effects in ultra-small MOSFETs

    Publication Year: 2004, Page(s):32 - 33
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (93 KB)

    In nanotransistors where the channel length is comparable to the electron mean free path, ballistic transport is of great importance regarding the device performance (Lundstrom and Ren, 2002). In this context, double gate MOSFET (DGMOS) with effective channel length and silicon thickness equal to 25 nm and 10 nm, respectively, has been studied using semi-classical Monte Carlo simulations to invest... View full abstract»

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  • Blank page

    Publication Year: 2004, Page(s): 0_14
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  • TCAD process/device modeling challenges and opportunities for the next decade

    Publication Year: 2004
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (64 KB)

    Technology CAD process and device simulation tools play a critical role in advanced technology development by giving insight into the relationships between processing choices and nanoscale device performance that cannot be obtained from physical metrology tools alone. TCAD makes its greatest impact when a detailed understanding of the underlying physical mechanisms is tightly coupled within the te... View full abstract»

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  • Blank page

    Publication Year: 2004, Page(s): 0_15
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  • A non-parabolic six moments model for the simulation of sub-100 nm devices

    Publication Year: 2004, Page(s):36 - 37
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (116 KB)

    Macroscopic transport models based on the first six moments of Boltzmann's equation (Grasser et al., 2001) are a natural extension to the well known drift-diffusion (DD) model (two moments) and the various hydrodynamic and energy-transport models (three or four moments) (Grasser et al., 2003). In addition to the solution variables of the energy-transport (ET) model, which are the carrier concentra... View full abstract»

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  • Multi-dimensional tunneling in density-gradient theory

    Publication Year: 2004, Page(s):38 - 39
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (142 KB)

    For engineering-oriented simulations of quantum confinement effects, density-gradient (DG) theory has come into wide use including in multi-dimensions. It is therefore somewhat curious that the DG description of tunneling (Ancona, 1990) has not been similarly applied to practical device simulation. The two most important explanations would seem to be: (i) questions of principle; and (ii) that the ... View full abstract»

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  • TCAD ready density gradient calculation of channel charge for Si/strained Si/sub 1-x/Ge/sub x/ dual channel pMOSFETs on [001] relaxed Si/sub 1-y/Ge/sub y/

    Publication Year: 2004, Page(s):40 - 41
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (121 KB)

    The dual channel MOSFET with strained Si/Si/sub 1-x/Ge/sub x/ layers on relaxed Si/sub 1-y/Ge/sub y/ is a promising structure for the improvement of CMOS performance because of its enhanced carrier mobilities (Hargrove, 1994). In order to obtain the correct threshold voltage and gate capacitance of these devices, it is essential to accurately model the channel charge distribution. In our study a d... View full abstract»

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  • Analytical and numerical investigation of noise in nanoscale ballistic field effect transistors

    Publication Year: 2004, Page(s):42 - 43
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (92 KB)

    Major semiconductor companies have already announced the fabrication of perfectly functional MOSFETs with channel lengths in the range 8-15 nm. In devices with short channel lengths, ballistic transport may play a significant role (2003). In addition, the gate oxide is thinner than 1 nm, therefore tunneling through the oxide is not negligible. We focus on shot noise of the drain and gate currents ... View full abstract»

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  • Intrinsic parameter fluctuations in conventional MOSFETs at the scaling limit: a statistical study

    Publication Year: 2004, Page(s):44 - 45
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (132 KB)

    The intrinsic parameter fluctuations induced by random dopants into the characteristics of ultra-small CMOS devices have previously been studied using 3D numerical simulation of predominantly idealised devices (Asenov, 1998). In this paper we present a simulation study of intrinsic parameter fluctuations in carefully scaled realistic MOSFET devices at the next three technology nodes. The scaled de... View full abstract»

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    Publication Year: 2004, Page(s): 0_16
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  • Thirty years of Monte Carlo simulations of electronic transport in semiconductors: their relevance to science and to mainstream VLSI technology

    Publication Year: 2004, Page(s):47 - 48
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (126 KB)

    In the talk, having reviewed a few chapters of the science-related history of MC simulations, we shall delve into this "real world". A prototypical example of these accurate yet flexible physical foundations of MC models is presented: scaled MOSFETs using Si, Ge, InP and In/sub 0.53/Ga/sub 0.47/As are simulated with a complete physical model. While at (relatively) large channel lengths, the small ... View full abstract»

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  • Monte Carlo simulation of electron velocity overshoot in DGSOI MOSFETs

    Publication Year: 2004, Page(s):49 - 50
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (92 KB)

    Velocity overshoot is one of the most important new effects observed in very short channel metal oxide semiconductor field effect transistors (MOSFETs), as this is directly related to the increase in current drive and transconductance experimentally observed. Comprehensive study of velocity overshoot effects in double gate MOSFETs were performed. A Monte Carlo simulator coupled with a self-consist... View full abstract»

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