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Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

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Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Date 8-10 Sept. 2004

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Title History

RF performance degradation in pMOS transistors due to hot carrier and soft breakdown effects

A wide tuning range CMOS VCO using variable inductor

Accurate AC transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique

Substrate coupling noise issues in silicon technology

CMOS LNA design for system-on-chip receiver stages

A comparison of Si CMOS, SiGe BiCMOS, and InP HBT technologies for high-speed and millimeter-wave ICs

Wafer-level three-dimensional monolithic integration for heterogeneous silicon ICs

Measurement and 3D simulations of substrate noise isolation and resistance for mixed signal applications

Simulation of self-heating in advanced high-speed SiGe bipolar circuits using the temperature simulator TESI

Monolithically integrated IMPATT diodes for Ka-band transmitters

SiGe BiCMOS LNA meeting FCC Part 15 ultra-wideband restrictions

A novel design of an asymmetric D-latch

Speed and power performance comparison of state-of-the-art CMOS and SiGe RF transistors

24 and 36 GHz SiGe HBT power amplifiers

A novel low power low voltage LNA and mixer for WLAN IEEE 802.11a standard

A manufacturable high-k MIM dielectric with outstanding reliability and voltage linearity for RF and mixed-signal technologies

Modeling and characterization of integrated passive elements for applications in silicon high frequency systems

Systems engineering of RF system-on-wafer applications in SiGe [radar active electronic steered array example]

Reliability investigation on a fully suspended redundancy ring

Dynamic characterization and model comparison of high frequency FET devices

RF small signal modeling of tri-gate Ω MOSFETs implemented on bulk Si wafers

An 8.5 GHz SiGe-based amplifier using fully self-aligned double mesa SiGe HBTs

A statistical tool for probing the coupling between noisy traps in semiconductor devices, with application to 1/f noise in SiGe HBTs

RF MEMS resonator for CMOS back-end-of-line integration

High mobility SiGe/Si n-type structures and field effect transistors on sapphire substrates

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