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2004 International Siberian Workshop on Electron Devices and Materials

1-5 July 2004

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  • 2004 International Siberian Workshop on Electron Devices and Materials EDM' 2004

    Publication Year: 2004, Page(s): 241
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (164 KB)

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  • 2004 International Siberian Workshop on Electron Devices and Materials. Proceedings. 5th Annual (IEEE Cat. No.04EX813)

    Publication Year: 2004
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  • [Blank page]

    Publication Year: 2004, Page(s): 0_2
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  • IEEE 2004 International Siberian Workshop on Electron Devices and Materials

    Publication Year: 2004, Page(s): i
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  • Organizers

    Publication Year: 2004, Page(s): ii
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  • Table of contents

    Publication Year: 2004, Page(s):iii - vi
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  • EDM Workshops and Tutuorials

    Publication Year: 2004, Page(s): vii
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (22 KB)

    Provides an abstract for each of the presentations and a brief professional biography of each presenter. The complete presentations were not made available for publication as part of the conference proceedings. View full abstract»

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  • [Blank page]

    Publication Year: 2004, Page(s): viii
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  • Jubilee papers [breaker page]

    Publication Year: 2004, Page(s): 1
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  • [Blank page]

    Publication Year: 2004, Page(s): 2
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  • The IEEE Novosibirsk State Technical University Student Branch: a road of 5 years long

    Publication Year: 2004, Page(s):3 - 9
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1936 KB) | HTML iconHTML

    This paper is the bright illustration to the history of establishing and developing the IEEE Novosibirsk Sitate Technical University (NSTU) Student Branch. This is a gift for IEEE NSTU Student Branch. From this paper we can form the image of a little piece of Russia placed almost in the geographical center of a great country. We can make acquaintance with persons who have started and developed thi... View full abstract»

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  • Increasing of ultrasonic technologies efficiency and development of ultrasonic devices for industry, medicine and agriculture

    Publication Year: 2004, Page(s):10 - 17
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1234 KB) | HTML iconHTML

    The ultrasonic technologies' application limitations and the special equipment development are analyzed in this article. Ultrasonic technologies' efficiency increase is shown and the technical decisions are considered, allowing to develop modern devices to realize them, practical designs examples are shown. View full abstract»

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  • [Blank page]

    Publication Year: 2004, Page(s): 18
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  • Tutorials

    Publication Year: 2004, Page(s): 19
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    Provides an abstract for each of the tutorial presentations and a brief professional biography of each presenter. The complete presentations were not made available for publication as part of the conference proceedings. View full abstract»

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  • [Blank page]

    Publication Year: 2004, Page(s): 20
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  • The four-terminal silicon piezotransducer: history and future

    Publication Year: 2004, Page(s):21 - 23
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (334 KB) | HTML iconHTML

    In this paper, the design of four-terminal silicon pressure piezotransducer (FTSP transducer) is presented. It have the rectangular current spread region with two current terminals and two potential terminals. The main principle of operation is the effect of transverse piezo-electromotive force. For designing of FTSP transducer it's necessary to make a number of steps. First step is the selection ... View full abstract»

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  • Effect of Ge deposition rate on growth and optical properties of Ge(Si)/Si(001) self-assembled islands

    Publication Year: 2004, Page(s):24 - 26
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (362 KB) | HTML iconHTML

    In this paper we study the growth and photoluminescence spectra of GeSi/Si(001) self-assembled islands grown in wide range of Ge deposition rate (/spl nu//sub Ge/=0.1/spl divide/0.75 /spl Aring//s). AFM studies of these structures revealed that for all Ge growth rates the dominant island species is the dome-shaped islands. It was found that the lateral size of dome islands is decreased and their s... View full abstract»

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  • The N-P-N structure with C/sub 60//p-Si heterojunctions

    Publication Year: 2004, Page(s):27 - 31
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (449 KB) | HTML iconHTML

    To form C/sub 60//p-Si heterojunction the thin fullerite film can be easily evaporated on the silicon substrate. In the case of two planar terminals on the fullerite film, there is an asymmetry in conductivities of thin fullerite layer in lateral, /spl sigma//sub L/, and transverse, /spl sigma//sub T/, directions of current flow, /spl sigma//sub L//spl Lt//spl sigma//sub T/. This reason leads to p... View full abstract»

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  • Next generation networks based on optical communication lines

    Publication Year: 2004, Page(s):32 - 34
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    In modern conditions when doubling of the traffic occurs every year, we are compelled to raise bandwidth of communication networks. On this way application of optical technologies does not have an alternative. This article considers the questions concerning transition to NGN based on optical communication lines. View full abstract»

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  • Session I Simulation of Microsystems and Semicoductor Electronic Devices

    Publication Year: 2004, Page(s): 35
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  • [Blank page]

    Publication Year: 2004, Page(s): 36
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  • Ge quantum dots in anomalous thick native germanium oxide layers

    Publication Year: 2004, Page(s):37 - 39
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (301 KB) | HTML iconHTML

    Anomalous thick (up to 500 nm) native germanium oxide layers (GeO/sub x/:(H/sub 2/O)) with Ge nano-clusters were studied using photoluminescence (PL) and ellipsometry spectroscopy techniques. Room temperature PL signal in yellow-green spectral region, as supposed, from Ge nanoclusters was observed. View full abstract»

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  • Effect of polaron formation in quantum ring on the resonant tunneling transport in the presence of magnetic field

    Publication Year: 2004, Page(s):40 - 41
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    Energy spectrum of the polaron state in the finite width quantum ring is found. The effect of the polaron state on the tunnelling transport in nanostructures with embedded quantum ring in the presence of the uniform magnetic field is discussed. View full abstract»

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  • Simulation of trench filling process

    Publication Year: 2004, Page(s):42 - 45
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    Investigation of deep gaps filling during deposition processes were carried out using Monte Carlo simulation. Critical deposition conditions separating complete and incomplete gap filling and dependence of critical deposition conditions on geometrical size of trench were obtained. The quality of gap fill was demonstrated to be dependent not only on deposition conditions but on the chemical nature ... View full abstract»

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  • Capacitance-voltage study of hydrogenated silicon-oxide-silicon structures fabricated by wafer bonding

    Publication Year: 2004, Page(s):46 - 47
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (185 KB) | HTML iconHTML

    Here we present the investigations of capacity-voltage characteristics on silicon-oxide-silicon-structures, which were obtained by a direct wafer bonding technique before and after hydrogen treatments. It is shown, that after hydrogenations for the bonded Si-SiO/sub 2/ interface a decreasing of the density of surface states and the traps localized in a relatively narrow energy takes place. View full abstract»

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