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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

22-27 Sept. 2002

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  • Ion Implantation Technology

    Publication Year: 2002, Page(s): 0_1
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  • The distribution of boron and arsenic in SOI wafers implementing SIMS

    Publication Year: 2002, Page(s):1 - 4
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (299 KB) | HTML iconHTML

    Silicon-on-Insulator (SOI) material is becoming increasingly more important for low-power, low-voltage applications. In this study, boron (B) and arsenic (As) implanted SOI wafers have been investigated using Secondary Ion Mass Spectrometry (SIMS). It is shown that efficient charge compensation in the oxide layer is required to obtain dose information at the active layer/oxide interface. A variety... View full abstract»

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