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Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International

Date 12-14 Feb. 1975

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Displaying Results 1 - 25 of 114
  • [Front cover]

    Publication Year: 1975 , Page(s): f1
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  • Foreword another banner year for solid-state progress

    Publication Year: 1975 , Page(s): 3
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  • Table of contents

    Publication Year: 1975 , Page(s): 4 - 7
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  • Session 1 large scale integration [breaker page]

    Publication Year: 1975 , Page(s): 11
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  • Session 2 optoelectronics [breaker page]

    Publication Year: 1975 , Page(s): 23
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  • Transparent metal oxide electrode CID imager array

    Publication Year: 1975 , Page(s): 34 - 35
    Cited by:  Papers (3)  |  Patents (1)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (539 KB)  

    THE USE OF METAL oxide transparent electrodesiin a high density charge injection imager device (CID)?? array has increased the sensitivity and has flattened and extended the spectral response to shorter wavelengths in the blue (40008). Experimentally determined spectral response curves of operational self-scanning CLD imager arrays will be presented. The difficulties associated with the use of pol... View full abstract»

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  • Session 3 A/D and D/A techniques [breaker page]

    Publication Year: 1975 , Page(s): 37
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  • Formal opening of conference

    Publication Year: 1975 , Page(s): 47
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  • Session 6 invited frontiers of technology [breaker page]

    Publication Year: 1975 , Page(s): 51
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  • Session 7 microwave FETs [breaker page]

    Publication Year: 1975 , Page(s): 61
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  • GaAs MESFET linear amplifiers

    Publication Year: 1975 , Page(s): 70 - 71
    Cited by:  Papers (10)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (309 KB)  

    RESULTS OBTAINED on microwave linear amplifiers using GaAs Schottky MESFETs will be discussed in this paper. Under common source class A operating conditions, 3-cell MESFETs have delivered output powers as high as 670 mW at 1-dB gain compression at 4 GHz with 35% power added efficiency as follows: [q = (Pout-Pin) /Pdc]. With a 2-cell MESFET, 295 mW was obtained at a -20-dB third-order intermodulat... View full abstract»

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  • Which way the 4K RAM

    Publication Year: 1975 , Page(s): 73
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  • Session 8 computer aids for IC design and testing [breaker page]

    Publication Year: 1975 , Page(s): 77
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  • Session 9 microwave oscillators and amplifiers [breaker page]

    Publication Year: 1975 , Page(s): 89
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  • Session 10 memory [breaker page]

    Publication Year: 1975 , Page(s): 101
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  • High-sensitivity charge-transfer sense amplifier

    Publication Year: 1975 , Page(s): 112 - 113
    Cited by:  Papers (12)  |  Patents (1)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (322 KB)  

    THE ONE-DEVICE dynamic memory cell, consisting of a single gating transistor and a storage capacitor, is attractive because of its low power consumption, its simple cell structure and its potential for high density. Density, however, is tied directly to the sensitivity of the detection circuit. It is the object of this paper to present a sense amplifier circuit with much better sensitivity than th... View full abstract»

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  • Session 11 high speed logic circuits [breaker page]

    Publication Year: 1975 , Page(s): 115
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  • Session 12 active microwave diode circuits [breaker page]

    Publication Year: 1975 , Page(s): 129
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  • Session 13 sampled-data analog signal processing [breaker page]

    Publication Year: 1975 , Page(s): 141
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  • A dual-differential analog charge-coupled device for time-shared recursive filters

    Publication Year: 1975 , Page(s): 152 - 153
    Cited by:  Papers (5)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (447 KB)  

    AMONG THE EARLIEST proposed applications of charge-transfer devices?? was a digitally-controlled analog recursive filter in monolithic form. Subsequently , a second-order recursive filter using a bucket brigade device was reported. Later, using the differential mode of operation for charge transfer devices3, a programmable bandpass filter and tone generator was described. Third-order recursive fil... View full abstract»

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  • Session 14 advances in solid-state logic [breaker page]

    Publication Year: 1975 , Page(s): 161
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  • Current hogging injection logic: new functionally integrated circuits

    Publication Year: 1975 , Page(s): 174 - 175
    Cited by:  Papers (4)  |  Patents (1)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (370 KB)  

    A new approach involving functionally integrated logic - Current Hogging Injection Logic (CHIL) - combines the input flexibilityo f CHL with the performance and packing density of 12L, and is fully compatible with 12L circuits. operated output NPN transistor can be turned off by applying a LO level voltage (<300 mV) to either input I1 or 12. If both inputs are turned off, the output transistor is ... View full abstract»

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  • Session 15 medical and consumer electronics [breaker page]

    Publication Year: 1975 , Page(s): 177
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  • A 512 × 320 element silicon imaging device

    Publication Year: 1975 , Page(s): 188 - 189
    Cited by:  Papers (8)  |  Patents (2)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (299 KB)  

    CHARGE-COUPLED DEVICE (CCD) technology has been used to fabricate a high-resolution, low-blooming, 512 x 320 element silicon image device that generates standard 525-line TV pictures. The choice of this cell count has been described previously??. The device uses a unique single-layer doped polysilicon gate structure. This structure maintains the basic simplicity of the original single-layer device... View full abstract»

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  • Session 16 analog circuit techniques [breaker page]

    Publication Year: 1975 , Page(s): 191
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