1972 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

16-18 Feb. 1972

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Displaying Results 1 - 25 of 127
  • [Front cover]

    Publication Year: 1972, Page(s): f1
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  • Foreword a rosy tone for solid-state electronics

    Publication Year: 1972, Page(s): 3
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  • Table of contents

    Publication Year: 1972, Page(s):4 - 7
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  • Session 1 memory I [breaker page]

    Publication Year: 1972, Page(s): 9
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  • A 4096-bit dynamic MOS RAM

    Publication Year: 1972, Page(s):10 - 11
    Cited by:  Papers (12)  |  Patents (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (327 KB)

    A memory employing a 3-transistor cell 2 mil2in area will be described. Access and cycle times are under 300 ns and 500 ns, respectively, at 100 μW/bit dissipation; standby power is 1 μW/bit. All inputs except the single clock are TTL compatible. View full abstract»

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  • The inverting cell concept for MOS dynamic RAMS

    Publication Year: 1972, Page(s):12 - 13
    Cited by:  Papers (1)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (463 KB)

    Power consumption can be reduced and refreshing simplified using a unique memory array with one extra run of cells, A 2048-bit chip has access time of 360 ns at less than 150 mW dissipation. View full abstract»

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  • A three transistor MOS memory cell with internal refresh

    Publication Year: 1972, Page(s):14 - 15
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (520 KB)

    A 1024-bit N-channel read/write memory has been fabricated using a memory call composed of three minimum geometry transistors. Each cell includes refresh circuitry within its 6.7 mil2area. View full abstract»

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  • Charge pump random-access memory

    Publication Year: 1972, Page(s):16 - 17
    Cited by:  Papers (3)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (458 KB)

    A new MOS memory cell concept replacing load resistors with charge pumping devices will be discussed. Access time of 50 ns and 100-nW/bit standby power has been achieved for a 1024-bit array. Standard MOS processing is used. View full abstract»

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  • Surface-charge RAM system

    Publication Year: 1972, Page(s):18 - 19
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (578 KB)

    THE APPLICATION of charge-transfer structures to shift registers for analog signal processing and serial memories promises considerable improvement over conventional technologies 1-3. Not only does their topological simplicity permit smaller and faster structures to he built, but the reduction in the number of vias (contacts to the silicon) promises processing advantages as well. This paper will p... View full abstract»

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  • Session 2 optical circuits and sensors [breaker page]

    Publication Year: 1972, Page(s): 21
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  • Integrated optical circuitry

    Publication Year: 1972, Page(s):22 - 23
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (350 KB)

    The current state-of-the-art in integrated optical circuitry based on optical guided waves in thin films will be reviewed. Sources, couplers, passive elements and modulators, which are basic components for integrated optics, will be discussed. View full abstract»

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  • A new ultrahigh-speed optically-coupled isolator compatible with TTL interfaces

    Publication Year: 1972, Page(s):24 - 25
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (512 KB)

    OPTICALLY-COUPLED isolators based on 900-940 nm GaAs infrared emitters and phototransistors have a serious gain bandwidth limitation which is the result of the long penetration depth of infrared radiation in silicon; 45 p and 70 p for 9oy0 absorption of 900 and 940 nm, respectively. The requirement of such a large photon collection depth prevents an effective separation of the large detector capac... View full abstract»

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  • Integrated high-speed photodetector with a lateral SCR

    Publication Year: 1972, Page(s):26 - 27
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (281 KB)

    A photosensitive integrated circuit operating as a threshold light detector will be covered. Current steering techniques, Schottky clamping and several new, improved performance devices have been utilized to attain high-speed operation and high pulse current capability. View full abstract»

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  • A novel semiconductor shift register and logic element with applications for optical imaging

    Publication Year: 1972, Page(s):28 - 29
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (373 KB)

    A new monolithic semiconductor shift register and logic element based on a plasma-coupled concept has been devised and experimentally confirmed. Use as a self-scanned optical image sensor has been demonstrated. View full abstract»

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  • A low-light-level self-scanned MOS image sensor

    Publication Year: 1972, Page(s):30 - 31
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (395 KB)

    A low-light-level self-scanned MOS image sensor using new signal processing and scanning techniques to eliminate completely switching transient noise from the array output has been developed. View full abstract»

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  • Session 3 microwave power amplifiers [breaker page]

    Publication Year: 1972, Page(s): 33
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  • Special problems in IMPATT diode power amplifiers

    Publication Year: 1972, Page(s):34 - 35
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (365 KB)

    IMPATT power amplifiers exhibit unique nonlinear distortion and instability characteristics, strong temperature effects, and excess noise with large signals. Some techniques for reduction or elimination of these effects will be described. View full abstract»

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  • A 0.5-W CW IMPATT diode amplifier for high-capacity 11-GHz FM radio-relay equipment

    Publication Year: 1972, Page(s):36 - 37
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (344 KB)

    A 0.5-W CW reflection-type IMPATT diode amplifier has been developed for 11-GHz FM radio-relay equipment, capable of handling 960 telephone channels. Paper will include discussion of circuitry. View full abstract»

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  • Integrated X-band power amplifier utilizing Gunn and IMPATT diodes

    Publication Year: 1972, Page(s):38 - 39
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (551 KB)

    A two-stage injection-locked power amplifier has been developed for the 10.7-13.2-GHz range, having integral input-output isolators and an out-of-lock monitor. Gain is 30 dB at 1-W output power and 300-MHz locking bandwidth. View full abstract»

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  • Design and performance of transferred electron amplifiers using distributed equalizer networks

    Publication Year: 1972, Page(s):40 - 41
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (455 KB)

    The design and performance of wideband transferred electron amplifiers will be discussed, including computer-aided measurement and simulation. This has been achieved by multi-stage amplifiers with over 25-dB gain, 0.4-W output power and 4-GHz bandwidth in X-band. View full abstract»

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  • Multistage Gunn amplifiers for FM-CW systems

    Publication Year: 1972, Page(s):42 - 43
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (342 KB)

    The advantages of waveguide Gunn amplifiers in systems applications will be discussed. Two examples are presented: a 1/2-W two-stage Ku-band amplifier with 17-dB gain and a 2-W, 33-dB gain, five-stage amplifier in high X-band. View full abstract»

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  • Formal opening of conference

    Publication Year: 1972, Page(s): 46
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  • The relevance of solid state to telecommunications

    Publication Year: 1972, Page(s): 47
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  • Solid-state electronics in public telecommunication of Japan

    Publication Year: 1972, Page(s): 48
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  • Session 5 Memory II [breaker page]

    Publication Year: 1972, Page(s): 49
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