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1970 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

18-20 Feb. 1970

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Displaying Results 1 - 25 of 105
  • [Front cover]

    Publication Year: 1970, Page(s): f1
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  • Foreword solid-state electronics in the 1970s

    Publication Year: 1970, Page(s): 3
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  • Table of contents

    Publication Year: 1970, Page(s):4 - 6
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  • Session 1 avalanche diode circuits [breaker page]

    Publication Year: 1970, Page(s): 9
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  • The singly-tuned IMPATT oscillator

    Publication Year: 1970, Page(s):10 - 11
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (383 KB)

    IMPATT diode design, fabrication, computer modeling, and performance in simple tuned circuits will be reported: power output is above 1 W at X-band; efficiencies, 8%. Tunable frequency range exceeds one octave. View full abstract»

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  • A coupled TEM bar circuit for solid-state microwave oscillators

    Publication Year: 1970, Page(s):12 - 13
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (382 KB)

    A compact, temperature stable resonator circuit developed for use with transferred electron oscillators and anomalous avalanche diodes will be discussed. Fundamental and harmonic RF impedances can be controlled to optimize oscillator performance. View full abstract»

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  • Silicon avalanche diodes as oscillators and power amplifiers in S-band

    Publication Year: 1970, Page(s):14 - 15
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (429 KB)

    Abrupt-and linearly-graded junction silicon diodes have been investigated in the high-efficiency mode. S-band and C-band oscillators produced peak powers of 60 W and efficiencies of 16.5%: S-band amplifiers yielded 19-dB gain and 2-W output. View full abstract»

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  • Avalanche diode power amplifier for Ku-band

    Publication Year: 1970, Page(s):16 - 17
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (418 KB)

    A reflection-type power amplifier for center frequencies from 15 to 18 GHz, with two avalanche diodes combined in a waveguide circuit, capable of producing more than 1-W output power, will be described. Diodes are operated in the transit-time mode. View full abstract»

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  • A frequency-modulated phase-locked IMPATT power combiner

    Publication Year: 1970, Page(s):18 - 19
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (375 KB)

    A microwave integrated circuit module permitting an arbitrary number of phase-locked IMPATT oscillators to be combined, while providing phase equalization essential for FM operation, will be covered. View full abstract»

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  • An experimental MM-wave high-speed path-length modulator

    Publication Year: 1970, Page(s):20 - 21
    Cited by:  Papers (21)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (378 KB)

    High-speed binary phase-shift modulation of a millimeter wave carrier can be obtained by path-length switching. A PIN diode modulator with approximately 1.2-dB insertion loss at 56.4 GHz and 0.7 ns switching time will be described. View full abstract»

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  • Session 2 display and storage [breaker page]

    Publication Year: 1970, Page(s): 23
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  • A monolithic numeric display device

    Publication Year: 1970, Page(s):24 - 25
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (390 KB)

    This paper will describe a monolithic numeric display device utilizing GaAs with an infrared-to-visible converting phosphor. A seven-bar numeric pattern has been etched into a silicon-doped GaAs PN junction. Total display-device dimension is .22 . View full abstract»

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  • A single-chip alphameric character-generator

    Publication Year: 1970, Page(s):26 - 27
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (478 KB)

    An integrated circuit that generates vertical and horizontal signals to display high-quality alphameric symbols on a CRT will be discussed. Each symbol, composed of seven srokes, may have virtually any length and angle. The complete generator-an analog read-only memory-is fabricated on a 65-mil square bi-polar chip. View full abstract»

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  • A solid-state display memory-decoder IC

    Publication Year: 1970, Page(s):28 - 29
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (397 KB)

    An integrated circuit incorporating memory, power gating and full logic decoding capability, whose application in all semiconductor displays points the way to modular assembly of large graphic and alphanumeric displays, will be described. Circuit features include high-speed access and bit-organized write-erase control. View full abstract»

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  • A silicon-dioxide storage tube

    Publication Year: 1970, Page(s):30 - 31
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (340 KB)

    An electronic charge storage target consisting of 600,000 silicon-dioxide storage elements/cm2has been fabricated. The target is capable of writing in one TV frame, erase in 1-4 TV frames, and continuous readout of stored TV quality images for several minutes. View full abstract»

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  • An adaptive ferroelectric transformer: A solid-state analog memory device

    Publication Year: 1970, Page(s):32 - 33
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (279 KB)

    An electronic transformer (audio frequency) with a voltage gain capable of being reversibly set within a broad dynamic range (40 dB) by a voltage pulse (10-4s) will be covered. Settings can be stored for months even with power disconnected. View full abstract»

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  • Formal opening of conference

    Publication Year: 1970, Page(s):35 - 36
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  • Science in the seventies--The policy issues

    Publication Year: 1970, Page(s): 37
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  • Session 4 semiconductor memory I [breaker page]

    Publication Year: 1970, Page(s): 39
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  • Megabit bipolar LSI memory systems: IV

    Publication Year: 1970, Page(s):40 - 41
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    A memory that uses bipolar 256-bit memory chips in 16 lead DIP's and efficient printed circuit board system packaging techniques has been developed. Simple bipolar structures for storage and decoding and design considerations will be discussed. View full abstract»

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  • A three transistor-cell, 1024-bit, 500 NS MOS RAM

    Publication Year: 1970, Page(s):42 - 43
    Cited by:  Papers (23)  |  Patents (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (360 KB)

    An MOS semiconductor memory array has been designed for main memory usage. The array is fully decoded, with a 500-ns read and write cycle, and 345-ns access time: uses three minimum-geometry MOS transistors per cell. View full abstract»

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  • A diode-coupled bipolar transistor memory cell

    Publication Year: 1970, Page(s):44 - 45
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (664 KB)

    A 30 mil2memory cell employing Schottky diodes and epitaxial sheet resistors will be described. In large arrays, expected cycle time is 60 ns and standby power is 75 μW. Projected store cost is one cent per bit. View full abstract»

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  • Electronically-variable semiconductor memory using two diodes per memory cell

    Publication Year: 1970, Page(s):46 - 47
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (310 KB)

    A read-write memory cell consisting of a high-barrier Schottky diode with a diffused guard ring connected in series with a diffused PN junction diode will be presented. One layer metallization connects the pairs of diodes in an array which can be accessed in random. View full abstract»

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  • Session 5 microwave transistor amplifiers [breaker page]

    Publication Year: 1970, Page(s): 49
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  • Design and performance of the GaAs FET

    Publication Year: 1970, Page(s):50 - 51
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (438 KB)

    A GaAs field-effect transistor that exhibits a unilateral gain of 17 dB at 2 GHz and an f_{\max } of greater than 12 GHz has been developed. Device employs an epitaxial N-type channel deposited on a semi-insulating GaAs substrate with a Schottky barrier gate. View full abstract»

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