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Solid-State Circuits Conference. Digest of Technical Papers. 1969 IEEE Internationa

Date 19-21 Feb. 1969

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Displaying Results 1 - 25 of 111
  • [Front cover]

    Publication Year: 1969, Page(s): f1
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  • Foreword the interdisciplinary scope of the ISSCC

    Publication Year: 1969, Page(s): 3
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  • Table of contents

    Publication Year: 1969, Page(s):4 - 6
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  • Session 1 operational amplifiers [breaker page]

    Publication Year: 1969, Page(s): 9
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  • INVITED: New approaches for the design of monolithic operational amplifiers

    Publication Year: 1969, Page(s):10 - 11
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (334 KB)

    A survey of recently-discovered integrated-circuit elements will be made, explaining their impact on the design of monolithic operational amplifiers with good DC characteristics, especially low-input current, and faster operating speeds. View full abstract»

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  • A new high-speed monolithic operational amplifier

    Publication Year: 1969, Page(s):12 - 13
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (241 KB)

    The design and fabrication of a monolithic operational amplifier with high slew rate, large bandwidth, fast settling time and excellent DC characteristics will be discussed. At closed loop gains of 1, 10 and 100, typical slew rates are 20 V/μs, 40 V/μs and 60 V/μs, respectively. View full abstract»

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  • A self-compensated monolithic operational amplifier with low input current and high slew rate

    Publication Year: 1969, Page(s):14 - 15
    Cited by:  Papers (18)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (312 KB)

    A monolithic operational amplifier which achieves a gain of 150,000, 5 nA input current and a 4 V/μs slew rate will be described. The amplifier incorporates high β input transistors, a novel PNP-NPN composite and an MOS compensation capacitor. View full abstract»

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  • An integrated low-voltage operational amplifier

    Publication Year: 1969, Page(s):16 - 17
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    A low-power operational amplifier that has medium open-loop gain will be described. Optimum circuit performance can be maintained, notwithstanding power drain and voltage gain changes due to amplifier's external components. View full abstract»

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  • Current-input differential amplifiers with high common-mode rejection

    Publication Year: 1969, Page(s):18 - 19
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (262 KB)

    This paper will describe a new differential amplifier, the dual of conventional amplifiers, whose output is proportional to the differential-mode input current, while common-mode currents are rejected. High common-mode rejection can be maintained over wide bandwidths. View full abstract»

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  • Session 2 bulk effect and avalanche devices and circuits [breaker page]

    Publication Year: 1969, Page(s): 21
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  • Invited: Transferred electron amplifiers and oscillators

    Publication Year: 1969, Page(s): 22
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  • Invite: Recent results in microwave power generation by avalanche diodes

    Publication Year: 1969, Page(s): 23
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (138 KB)

    The modes of oscillation of avalanche diodes, including the recently-discovered TRAPATT mode, and the various circuit conditions under which they operate will be covered in this paper. View full abstract»

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  • Applying IMPATT power sources to modern microwave systems

    Publication Year: 1969, Page(s):24 - 25
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (270 KB)

    IMPATT oscillators have been designed into microwave systems as 35-GHz pumps for parametric amplifiers, multipurpose drivers for radar TWT transmitters and exciters with wide-band modulation capability for data-link transmission systems. View full abstract»

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  • A new microwave amplifier for multichannel FM signals using an IMPATT diode oscillator

    Publication Year: 1969, Page(s):26 - 27
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (285 KB)

    A high-quality microwave amplifier for multichannel FM signals will be described. The design is based on excellent results of a noise-loading test for an IMPATT oscillator phase-locked to an external FM driving signal. View full abstract»

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  • Broadband power amplification with gunn effect diodes

    Publication Year: 1969, Page(s):28 - 29
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (291 KB)

    Coherent single-frequency power amplification has been obtained at X-band. The bandwidth exceeds 2 GHz with 8-dB gain. Computer simulation indicates bandwidths should exceed 40% with simple networks. View full abstract»

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  • Formal opening of conference

    Publication Year: 1969, Page(s):31 - 32
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  • Keynote address: Strategy and tactics for integrated electronics

    Publication Year: 1969, Page(s): 33
    Cited by:  Papers (2)
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  • Session 4 semiconductor memories [breaker page]

    Publication Year: 1969, Page(s): 35
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  • A high-performance monolithic store

    Publication Year: 1969, Page(s):36 - 37
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (262 KB)

    A 40-ns access bipolar monolithic memory of 2021 words × 144 bits capacity has been developed and incorporated in a computing system. The design and structure of a 64-bit silicon chip will be presented and some aspects of the organization and circuit design discussed. View full abstract»

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  • A 64-bit planar double-diffused monolithic memory chip

    Publication Year: 1969, Page(s):38 - 39
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (377 KB)

    A 40-ns access bipolar monolithic memory of 2021 words × 144 bits capacity has been developed and incorporated in a computing system. The design and structure of a 64-bit silicon chip will be presented and some aspects of the organization and circuit design discussed. View full abstract»

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  • A 40-NS, 144-bit N-channel MOS-IC memory

    Publication Year: 1969, Page(s):40 - 41
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    A monolithic MOS 144-bit random access memory has been fabricated, using N-channel MOS transistors. The memory operates with a 10-ns access time, 30-ns non-destructive read cycle time, and a 40-ns write cycle time. View full abstract»

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  • An integrated associative memory element

    Publication Year: 1969, Page(s):42 - 43
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (238 KB)

    The design of an integrated, parallel-organized, associative memory element containing the majority of repetitive logic required to implement a large, flexible associative memory system will be described. View full abstract»

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  • Anomalous behavior in stacked-gate MOS tetrodes

    Publication Year: 1969, Page(s):44 - 45
    Cited by:  Papers (2)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (298 KB)

    This paper will describe a new type of trapping effect observed in stacked-gate MOS tetrodes. Control of and application of this effect to an electrically-alterable read-only memory will be discussed. View full abstract»

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  • The application of MNOS transistors in a preset counter with nonvolatile memory

    Publication Year: 1969, Page(s):46 - 47
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (275 KB)

    A DC binary circuit which utilizes P-channel MNOS transistors for all circuit functions and several novel characteristics such as nonvolatile storage, preset complementing and the elimination of a threshold voltage drop on the load devices will be discussed. View full abstract»

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  • Session 5 optoelectronic technology and applications [breaker page]

    Publication Year: 1969, Page(s): 49
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