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Microwave Symposium Digest, 1987 IEEE MTT-S International

Date May 9 1975-June 11 1987

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Displaying Results 1 - 25 of 142
  • [Front cover - 1978 Vol. II MWSYM]

    Publication Year: 1987, Page(s): f1
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    Freely Available from IEEE
  • 1987 IEEE MTT-S International Microwave Symposium Digest, Volume II [Front cover and copyright notice]

    Publication Year: 1987, Page(s):i - ii
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    Freely Available from IEEE
  • Session P - Radar Systems (1987 Vol. II [MWSYM]) [breaker page]

    Publication Year: 1987, Page(s): 529
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    Freely Available from IEEE
  • Solid-State Transmitter/Modulator for the Mode Select Airport Beacon System Sensor

    Publication Year: 1987, Page(s):531 - 534
    Cited by:  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (489 KB)

    This solid-state communications transmitter/modulator has been developed for the Westinghouse interrogator to be used on the Mode Select (Mode S) Airport Beacon System Sensor. These all solid state Air Traffic Control Systems will be installed in 137 airports in the United States to update and improve present airport/plane communications. They are also compatible with the present air traffic commu... View full abstract»

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  • 94GHz Integrated Monopulse Radar Demonstrator

    Publication Year: 1987, Page(s):535 - 538
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (288 KB)

    The design and development of a new miniaturised Monopulse Radar demonstrator is described. The construction of the front-end is illustrated and some experimental performance results are presented. View full abstract»

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  • Self Adaptive Bandpass Filters with Applications to "Frequency Set-On" Oscillators

    Publication Year: 1987, Page(s):539 - 542
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (185 KB)

    There are many potential applications particularly at microwave frequencies, for filters whose characteristics vary according to the signal applied to the device. Self adaptive bandpass filters are one class which produce a bandpass characteristic around the carrier frequency of a signal. One application is in multimode oscillators where any mode will then be stable when excited by a sample of an ... View full abstract»

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  • Noise in Pulsed Microwave Systems

    Publication Year: 1987, Page(s):543 - 545
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (189 KB)

    The relationship between the noise spectrum of a pulsed microwave signal and that of the same signal operating in the CW mode is derived theoretically and verified through measurements. It is shown that a simple closed form solution exists for wideband white noise but more involved calculations are required otherwise. View full abstract»

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  • Session Q - Open Forum II (1987 Vol. II [MWSYM]) [breaker page]

    Publication Year: 1987, Page(s): 547
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  • Multioctave Multithrow Active Switches

    Publication Year: 1987, Page(s):549 - 551
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (290 KB)

    Multioctave, multithrow active switches have been developed to operate from 2 to 18 GHz. A SPDT switch and a SP4T switch have been constructed. The switches demonstrate 4 dB forward gain and 60 dB of isolation between the input and common port. The switches employ monolithic distributed amplifiers to obtain the forward gain. View full abstract»

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  • A Comparative Study of TEGFET and MESFET Large Signal Character and Saturation Mechanisms

    Publication Year: 1987, Page(s):553 - 556
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (324 KB)

    A new method for large-signal transistor analysis is presented and applied to TEGFETs and MESFETS. Saturation mechanisms of both types of transistors are described and operation differences are discussed. The importance and influence of higher harmonic signal components on the large signal characteristics is also shown. View full abstract»

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  • Comparative Study of Phase Noise in HEMT and MESFET Microwave Oscillators

    Publication Year: 1987, Page(s):557 - 560
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (284 KB)

    Several identical X band cavity stabilized MESFET and HEMT oscillators are presented. Their phase noise and some other noise data are reported. Under exactly the same oscillating conditions, the MESFET oscillators exhibit the best phase noise performance not only because of their lower low frequency noise but also because of a better linearity which provides a smaller LF noise conversion in the mi... View full abstract»

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  • A GaAs Monolithic 6-GHz Low-Noise Amplifier for Satellite Receivers

    Publication Year: 1987, Page(s):561 - 564
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (403 KB)

    A design approach and accurate modeling techniques have been developed to realize a GaAs monolithic, 6-GHz, two-stage, low-noise amplifier (LNA) with a measured 1.7-dB noise figure and associated 21-dB gain. This satellite-compatible, self-biased LNA design, with chip dimensions of 80 x 135 mil, utilizes an ion-implantation FET model which predicts measured in-band amplifier gain to within 0.5 dB ... View full abstract»

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  • Miniature Gain Block for Satellite Communication Transceivers

    Publication Year: 1987, Page(s):565 - 567
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (622 KB)

    The development and optimization of a two-stage Ku-band feedback amplifier using miniature lumped element circuits in batch processed form is described. Bondwires are replaced by electroformed interconnects to reduce parasitic and improve reproducibility and reliability. Results on pre-space qualification thermal and radiation tests are presented. View full abstract»

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  • A GaAs Microwave MESFET with Extremely Low Distortion

    Publication Year: 1987, Page(s):569 - 572
    Cited by:  Papers (2)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (239 KB)

    A ku-band GaAs power FET with extremely low signal distortion was fabricated on a material with graded doping profile, grown by a special vapor phase epitaxy technique. The device has a nearly constant gm over a wide range of the bias. At P/sub o/ = 18 dBm and P/sub sat/ = 24 dBm power levels of a 6 to 18 GHz broad band amplifier, this device demonstrates second harmonic levels as low as 40 dBc an... View full abstract»

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  • The Deformable-Channel Model-A New Approach to High-Frequency MESFET Modelling

    Publication Year: 1987, Page(s):573 - 574
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (135 KB)

    High-frequency small-signal circuit parameters are evaluated for a saturated-channel MESFET by including transit-time effects in a rigorous way through a study of induced shape changes in the saturated-channel region. Results agree well with empirical equivalent-circuit parameters for a physical MESFET. View full abstract»

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  • Load-Line Analysis in the Frequency Domain with Distributed Amplifier Design Examples

    Publication Year: 1987, Page(s):575 - 578
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (416 KB)

    Time-Domain analysis of a multi-FET circuit over a wide frequency range and for several power levels using SPICE is not practical because of excessive computer time causing high cost and slow feedback to the designer. The load-line analysis to be described is a linear technique in the frequency domain and is therefore fast. A load-line ellipse is generated at each node of interest and graphically ... View full abstract»

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  • Fast-Settling, Low Noise Ku Band Fundamental Bipolar VCO

    Publication Year: 1987, Page(s):579 - 581
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (277 KB)

    This paper discusses fast-settling fundamental-output voltage-controlled oscillators in the Ku Band (15 to 18 GHz & 12 to 15 GHz), using silicon bipolar transistors and silicon varactor diodes. With these oscillators the output frequency settles within 2 µs to within +-1 MHz of the final frequency. Phase noise at 16.2 GHz was measured to be -93 dBc/Hz at 100 kHz from the carrier. View full abstract»

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  • Long Term Stability of DROs Compared to Crystal Oscillators

    Publication Year: 1987, Page(s):583 - 586
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB)

    Guidelines are presented for GaAs FET DRO's which when followed result in the DRO's long term drift characteristics being similar to crystal oscillators. The guidelines fall into three categories: electrical stresses in the FET, fabrication issues of the DRO, and processing of the FET (a screening test for the GaAs FETs is described). Experimental data is included on a sample of units that support... View full abstract»

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  • Low Phase Noise X/Ku-Band VCO

    Publication Year: 1987, Page(s):587 - 590
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (378 KB)

    A balanced, thin-film VCO utilizing silicon bipolar transistors and hyper-abrupt varactor diodes has yielded 40% tuning bandwidth while demonstrating excellent frequency stability. Key features of this design are: High RF output power, linear tuning characteristics, excellent sub-harmonic rejection, and low single sideband phase noise. At an operating frequency of 11.5 GHz, single sideband phase n... View full abstract»

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  • Microwave Resistance of Gallium Arsenide and Silicon P-I-N Diodes

    Publication Year: 1987, Page(s):591 - 594
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (293 KB)

    The purpose of this paper is to demonstrate that the p-i-n diode resistance is definable as a function of frequency and depends on the diode geometry and electronic properties. A formula for the p-i-n diode resistance is presented and compared with experimental resistance versus frequency data for both silicon and gallium arsenide p-i-n diodes. View full abstract»

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  • W-Band Crossbar Mixers Integrated Entirely on a Single-Sided Substrate Yielding 15 GHz Instantaneous Bandwidth

    Publication Year: 1987, Page(s):595 - 597
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (142 KB)

    Broadband millimeter-wave crossbar mixers using commercially available GaAs beamlead diodes and integrated circuit technology are described. The entire integrated mixer circuit is printed on the same substrate surface allowing for future extension to MMIC form. Measured performance of a compact single balanced mixer at 100 GHz shows an instantaneous 15 GHz RF and IF bandwidth and a conversion loss... View full abstract»

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  • Diode Phase Shifter and Model in Waveguide

    Publication Year: 1987, Page(s):599 - 602
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (325 KB)

    Two models for a diode phase shifter in waveguide are presented. The first is a circuit model of the diode that can be used to predict response for design of different phase shift values. The second is an RLC model that can be realized as a strip and a strip with a gap for simulation of the diode. View full abstract»

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  • Wide-Band True Time Delay Phase Shifter Devices

    Publication Year: 1987, Page(s):603 - 606
    Cited by:  Papers (4)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (393 KB)

    Fiber optic links in microwave and millimeter wave region have recently been demonstrated. Integration of these links into systems require the development of fiber optic devices such as novel true time delay devices. Most of the currently available fiber optic time delay components provide for constant, fixed time delays. Many applications on the other hand, such as optically controlled phased arr... View full abstract»

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  • A Novel Whiskerless Schottky Diode for Millimeter and Submillimeter Wave Application

    Publication Year: 1987, Page(s):607 - 610
    Cited by:  Papers (63)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (387 KB)

    A novel whiskerless Schottky diode has been developed in which shunt capacitance is minimized by means of an etched surface channel. This structure is easily fabricated and the DC I-V characteristics areas good as those of the best available whisker-contacted devices. Preliminary RF characterization in an unoptimized mount at 110 GHz has yielded room temperature SSB mixer noise temperature of 950 ... View full abstract»

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  • Filled Image Guide for Millimeter-Wave Circuits

    Publication Year: 1987, Page(s):611 - 612
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (126 KB)

    In this paper the method of optimal design is dealt with for six parameters selected by the Orthogonal Array Table (OAT). A lot of sets of parameters are presented, by which the filled image guides have optimal propagation properties. The guiding ability is strengthened greatly as the hollow core is filled with another dielectric material. View full abstract»

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