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Microwave and Millimeter-Wave Monolithic Circuits

Issue 1 • Date May 31 1983-June 1 1983

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  • [Front cover - 1987 MWSYM]

    Publication Year: 1987, Page(s): f1
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  • Message from the General Chairman [1987 MWSYM]

    Publication Year: 1987, Page(s): iii
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  • 1987 Symposium Microwave and Millimeter-Wave Monolithic Circuits Steering and Technical Program Committee (1987 [MWSYM])

    Publication Year: 1987, Page(s): iv
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  • Sponsors (1987 [MWSYM])

    Publication Year: 1987, Page(s):i - ii
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  • Table of contents

    Publication Year: 1987, Page(s):viii - x
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  • 1987 IEEE Microwave and Millimeter Wave Monolithic Circuits Steering and Technical Program Committee (1987 [MWSYM])

    Publication Year: 1987, Page(s):vi - vii
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  • Message from the Technical Program Chairman [1987 MWSYM]

    Publication Year: 1987, Page(s): v
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  • [Back cover - 1987 MWSYM]

    Publication Year: 1987, Page(s): b1
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  • Nonlinear Modeling for MMIC's

    Publication Year: 1987, Page(s):93 - 96
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (352 KB)

    Nonlinear microwave CAD as applied to GaAs MMIC's is still in its infancy. A brief review is given of some of the work on modeling the nonlinear or "large-signal" behavior of the GaAs FET and nonlinear microwave circuit simulation. This is an important topic to the future success of GaAs MMIC's. Several important issues are raised with respect to nonlinear CAD for GaAs MMIC's. View full abstract»

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  • Ka-band Monolithic GaAs Power FET Amplifiers

    Publication Year: 1987, Page(s):97 - 100
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (576 KB)

    GaAs power MMIC amplifiers with an optimized FET structure operating at Ka-band have achieved a small-signal gain of 4.3 dB and an output power of 481 mw. These 1.7 x 0.9-mm MMICs include DC-blocking capacitors and bias networks. A cascaded four-stage amplifier has achieved a power gain of 18.9 dB and output power of 437 mw at 28 GHz. These results may represent the highest power/gain y... View full abstract»

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  • A Producible 2 to 20 GHz Monolithic Power Amplifier

    Publication Year: 1987, Page(s):19 - 21
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    The design, fabrication, and performance of a 0.4-W, 2 to 20 GHz distributed amplifier are described in this paper. Small-signal gain is 5 dB and power-added efficiency is 15%. The amplifier is fabricated on ion-implanted GaAs, and achieves excellent performance through use of series gate capacitors and a tapered drain line. Circuit layout and optimization to obtain process insensitivity and first... View full abstract»

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  • 1-6 GHz GaAs MMIC Linear Attenuator with Integral Drivers

    Publication Year: 1987, Page(s):105 - 107
    Cited by:  Papers (10)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (192 KB)

    This paper describes the performance of a voltage-controlled attenuator with a 12 dB linear attenuation vs. control voltage range. This linear attenuator greatly facilitates the realization of both closed and open loop gain compensation networks. Over the -55°C to 85°C range the attenuator recorded a 7.2 +- 1 dB/V linear transfer function while using only 25 mW from a single 4 V power su... View full abstract»

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  • Wideband GaAs MMIC Receiver

    Publication Year: 1987, Page(s):101 - 103
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (464 KB)

    A wideband GaAs MMIC receiver module has been developed using half-micron gate MESFET technology. The fabrication process used is optical lithography with ion-implanted undoped LEC GaAs wafers. The module consists of three generic monolithic chips: an RF amplifier, an IF amplifier, and an image rejection filter which is integrated on a dual-gate MESFET mixer chip. The RF input frequency is 6 to 10... View full abstract»

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  • A Monolithic GaAs 3-Bit Phase Quantization Sampler

    Publication Year: 1987, Page(s):43 - 47
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (464 KB)

    This paper describes the analysis, design, and development of a high-speed A/D and D/A converter using phase-quantization sampling. A monolithic GaAs A/D and D/A converter has been demonstrated within a RF signal acquisition system. Performance data on the monolithic IC reveals that the 3-bit quantization system exhibits signal reconstruction with harmonic suppression exceeding -25 dB across an IF... View full abstract»

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  • State-of-the-Art Ion-Implanted Low-Noise GaAs MESFET and Monolithic Amplifier

    Publication Year: 1987, Page(s):115 - 117
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (256 KB)

    State-of-the-art GaAs low-noise MESFET and monolithic amplifier have been fabricated using a high yield, planar, ion-implantation process. A 0.5 µm-gate FET has achieved 1.2 dB noise figure with 8.8 dB associated gain at 12 GHz and 1.7 dB noise figure with 6.6 dB associated gain at 18 GHz. A two-stage monolithic amplifier using this FET process has achieved 1.8 dB noise figure with 23.6 dB as... View full abstract»

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  • A Low Current, High Gain Monolithic Amplifier Covering 5-20 GHz Bandwidth

    Publication Year: 1987, Page(s):23 - 26
    Cited by:  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (312 KB)

    A monolithic amplifier has been developed using a three-stage structure with feedback input/output stages and a reactively matched middle stage. The amplifier has exhibited greater than 12dB gain across 5-20 GHz bandwidth at a bias current of 40mA. The current to gain efficiency of 3.3mA/dB is the highest ever reported for a monolithic amplifier covering this bandwidth. The VSWR is less than 2.0:1... View full abstract»

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  • A 2-20 GHz, High-Gain, Monolithic HEMT Distributed Amplifier

    Publication Year: 1987, Page(s):109 - 113
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (632 KB)

    A low-noise 2-20 GHz monolithic distributed amplifier utilizing 0.3-micron gate-length HEMT devices has achieved 11-dB +- 0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved mid-band (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-b... View full abstract»

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  • Monolithic MBE GaAs Pin Diode Limiter

    Publication Year: 1987, Page(s):35 - 37
    Cited by:  Papers (9)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (184 KB)

    A broadband MBE GaAs PIN/NIP diode limiter has demonstrated 15 dB of isolation with a +32.5 dBm input signal while maintaining less than 0.25 dB of small-signal insertion loss from 0.05 GHz to 14 GHz. These results were obtained by incorporating vertical GaAs PIN/NIP diodes in a shunt-loaded microstrip configuration. View full abstract»

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  • DC-40 GHz and 20-40 GHz MMIC SPDT Switches

    Publication Year: 1987, Page(s):85 - 88
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (536 KB)

    Monolithic GaAs SPDT switches operating from dc to 40 GHz and 20 to 40 GHz have been demonstrated. The switches use MESFETs with the same characteristics as a mm-wave amplifier to allow for ease of integration in the future. The gate length is 0.35 microns, and ion implanted material is used. The 20-40 GHz switch uses a combination of shunt FETs and quarter-wave transformers. Better than 2 dB inse... View full abstract»

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  • Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated Circuits

    Publication Year: 1987, Page(s):1 - 5
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (512 KB)

    This paper reviews the present status of GaAIAs/ GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with fmax above 100 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain of 200 per stage. Breakdown voltages (BVCBO) above 20 V a... View full abstract»

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  • Successful Automated Alloy Attachment of GaAs MMIC's

    Publication Year: 1987, Page(s):127 - 129
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (472 KB)

    Automated alloy attachment of GaAs MMIC's is presented utilizing a reflow furnace for attachment of multiple devices at one time rather than manual scrub of each monolithic separately. Reflow characteristics of a variety of solders were analyzed as well as behavior of those solders during long term temperature bake and during 1000 cycles of thermal cycling. RF and thermal impedance data was measur... View full abstract»

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  • Stability and Reliability Investigation on Fully ECL Compatible High Speed- Logic ICs.

    Publication Year: 1987, Page(s):49 - 52
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (544 KB)

    The electrical characteristics stability and reliability were investigated on newly developed high speed GaAs logic ICS. A resistor-loaded source-coupled FET logic (SCFL) was employed as a basic circuit architecture. The selectively epitaxial grown n+ - GaAs layers were aclopted for the contact regions of the WSi self-aligned gate FET. Maximum operating data rate of more than 2.6 Gb/s w... View full abstract»

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  • Millimeter-Wave Monolithic Gunn Oscillators

    Publication Year: 1987, Page(s):11 - 13
    Cited by:  Papers (3)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (528 KB)

    A millimeter-wave monolithic GaAs Gunn oscillator has been designed, fabricated and tested. Epitaxial layers were grown by conventional vapor phase epitaxy on semi-insulating substrate. The matching circuit and bias circuitry were monolithically fabricated on the same chip as the active device. With no external tuning, the oscillator chip delivers 1 mW and 1.5 mW at 68.4 GHz and 44.9 GHz, respecti... View full abstract»

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  • A Distributed Monolithic 2-18 GHz Dual-gate FET Mixer

    Publication Year: 1987, Page(s):27 - 30
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    A novel broadband mixer topology, which can be implemented using either monolithic or discrete integrated circuit methods, has been developed using distributed design techniques. The MMIC mixer exhibits excellent 2-18 GHz conversion gain performance with signal handling capabilities and LO drive requirements similar to conventional diode double-balanced circuits. View full abstract»

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  • 44 GHz Monolithic Low Noise Amplifier

    Publication Year: 1987, Page(s):15 - 18
    Cited by:  Papers (23)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (344 KB)

    The design, fabrication, and performance of a single-stage 44 GHz monolithic HEMT low noise amplifier are described. The chip includes a single heterojunction HEMT with matching and biasing circuits. Greater than 5 dB gain was measured from 43.5 to 45.5 GHz and a noise figure of 5 dB with the associated gain of 5.5 dB was achieved at 44.5 GHz. The chip size is 1.25mm x 1.0mm. View full abstract»

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