Microwave and Millimeter-Wave Monolithic Circuits

Issue 1 • May 31 1983-June 1 1983

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  • [Front cover - 1987 MWSYM]

    Publication Year: 1987, Page(s): f1
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  • Message from the General Chairman [1987 MWSYM]

    Publication Year: 1987, Page(s): iii
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  • 1987 Symposium Microwave and Millimeter-Wave Monolithic Circuits Steering and Technical Program Committee (1987 [MWSYM])

    Publication Year: 1987, Page(s): iv
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  • Sponsors (1987 [MWSYM])

    Publication Year: 1987, Page(s):i - ii
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  • Table of contents

    Publication Year: 1987, Page(s):viii - x
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  • 1987 IEEE Microwave and Millimeter Wave Monolithic Circuits Steering and Technical Program Committee (1987 [MWSYM])

    Publication Year: 1987, Page(s):vi - vii
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  • Message from the Technical Program Chairman [1987 MWSYM]

    Publication Year: 1987, Page(s): v
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  • [Back cover - 1987 MWSYM]

    Publication Year: 1987, Page(s): b1
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  • DC-40 GHz and 20-40 GHz MMIC SPDT Switches

    Publication Year: 1987, Page(s):85 - 88
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (536 KB)

    Monolithic GaAs SPDT switches operating from dc to 40 GHz and 20 to 40 GHz have been demonstrated. The switches use MESFETs with the same characteristics as a mm-wave amplifier to allow for ease of integration in the future. The gate length is 0.35 microns, and ion implanted material is used. The 20-40 GHz switch uses a combination of shunt FETs and quarter-wave transformers. Better than 2 dB inse... View full abstract»

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  • GaAs MMIC for Digital Radio Frequency Memory (DRFM) Subsystems

    Publication Year: 1987, Page(s):53 - 56
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (600 KB)

    A DRFM analog subsystem comprising of 10 GaAs MMIC chips (six limiting amplifiers, one quadrature IF downconverter, two IF amplifiers, and one quadrature upconverter) has been developed and integrated into an 11.8cm3 (.72 in3) module. The input signal dynamic range for the module is 50 dB from 2-6 GHz, the image sideband rejection is 20 dB typical, and the LO to RF isolation ... View full abstract»

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  • A Three-Bit Monolithic Phase Shifter at V-Band

    Publication Year: 1987, Page(s):81 - 84
    Cited by:  Papers (1)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (352 KB)

    This paper describes the design and performance of a three-bit monolithic phase shifter at V-band. The selected circuit approach was a reflection phase shifter with switched delay lines. Schottky diodes were used as the switching elements. Tested at 62.5 GHz, the RMS phase error was 2.7°, the insertion loss 10.8 +- 1.8 dB (including fixture loss), and the VSWR was better than 2.1:1. The maxim... View full abstract»

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  • Stability and Reliability Investigation on Fully ECL Compatible High Speed- Logic ICs.

    Publication Year: 1987, Page(s):49 - 52
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (544 KB)

    The electrical characteristics stability and reliability were investigated on newly developed high speed GaAs logic ICS. A resistor-loaded source-coupled FET logic (SCFL) was employed as a basic circuit architecture. The selectively epitaxial grown n+ - GaAs layers were aclopted for the contact regions of the WSi self-aligned gate FET. Maximum operating data rate of more than 2.6 Gb/s w... View full abstract»

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  • Two stage dual Gate MESFET Monolithic Gain Control Amplifier for Ka-Band

    Publication Year: 1987, Page(s):75 - 79
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (840 KB)

    A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters. View full abstract»

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  • A Monolithic GaAs 3-Bit Phase Quantization Sampler

    Publication Year: 1987, Page(s):43 - 47
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (464 KB)

    This paper describes the analysis, design, and development of a high-speed A/D and D/A converter using phase-quantization sampling. A monolithic GaAs A/D and D/A converter has been demonstrated within a RF signal acquisition system. Performance data on the monolithic IC reveals that the 3-bit quantization system exhibits signal reconstruction with harmonic suppression exceeding -25 dB across an IF... View full abstract»

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  • Development of Key Monolithic Circuits to Ka-Band Full MMIC Receivers

    Publication Year: 1987, Page(s):69 - 74
    Cited by:  Papers (16)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (600 KB)

    Key monolithic circuits to Ka-band full MMIC receivers have been designed and fabricated. Conventional hybrid-oriented elements such as RF image-rejection filters, LO dielectric resonators and IF hybrid couplers have been eliminated for the full MMIC configuration. Prospects have been obtained for realization of very-small-size microwave communication receivers. View full abstract»

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  • A Low Noise GaAs MMIC Satellite Downconverter for the 6 to 4 GHz Band

    Publication Year: 1987, Page(s):139 - 142
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB)

    An all GaAs MMIC wideband 6 to 4 GHz downconverter technology demonstrator has been designed, developed, fabricated and tested. The module achieves an overall conversion gain of 67 dB with a 3.2 dB noise figure. The MMIC chip set developed includes an LNA, an active splitter, phase shifters, a mixer, broadband power combiners and an IF amplifier. The assembly represents a significant size and weig... View full abstract»

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  • Successful Automated Alloy Attachment of GaAs MMIC's

    Publication Year: 1987, Page(s):127 - 129
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (472 KB)

    Automated alloy attachment of GaAs MMIC's is presented utilizing a reflow furnace for attachment of multiple devices at one time rather than manual scrub of each monolithic separately. Reflow characteristics of a variety of solders were analyzed as well as behavior of those solders during long term temperature bake and during 1000 cycles of thermal cycling. RF and thermal impedance data was measur... View full abstract»

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  • A New Method of Analyzing and Modeling Integrated Optoelectronic Components

    Publication Year: 1987, Page(s):39 - 41
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (776 KB)

    Using a mode matching technique, a modular microwave equivalent circuit incorporating both guided and continuum spectra has been developed to model integrated optoelectronic components accurately with limited computational effort. The analysis is verified with experiments on GaAs rib waveguides and directional and three guide couplers. View full abstract»

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  • Low Cost MillImeter Wave Monolithic Receivers

    Publication Year: 1987, Page(s):63 - 67
    Cited by:  Papers (4)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (808 KB)

    A 35 GHz receiver using GaAs monolithic and hybrid circuits has been developed for low cost manufacture. The receiver is comprised of a downconverter, an If amplifier and voltage regulators. This paper will report on the design, fabrication, integration, packaging and testing of a monolithic mixer, a monolithic Gunn Diode Oscillator and a GaAs Downconverter circuit which has exhibited a SSB receiv... View full abstract»

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  • A Low Cost Packaging/Testing Procedure for Manufacturing GaAs MMIC

    Publication Year: 1987, Page(s):135 - 137
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (408 KB)

    The development of a low cost, high throughput testing/packaging procedure for GaAs MMIC is described. Automated on-wafer RF and DC testing is essential for volume production of MMIC chips. However most MMIC circuits cannot be tested at wafer level due to lack of proper RF test environment. The proposed frame tape chip carrier approach takes full advantage of the RF probe system. This technique re... View full abstract»

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  • Wide-Band Monolithic GaAs Phase Detector for Homodyne Reception

    Publication Year: 1987, Page(s):123 - 125
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (240 KB)

    A multipurpose, 0, 04 - 4 GHz, monolithic GaAs detector circuit has been fabricated. It shows a sensitivity of 2.5 V/rad with a DC offset of 300 mV for a differential dynamic range of 8V. It has been successfully tested as a phase detector in a homodyne receiver over L and S bands. View full abstract»

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  • A Producible 2 to 20 GHz Monolithic Power Amplifier

    Publication Year: 1987, Page(s):19 - 21
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (264 KB)

    The design, fabrication, and performance of a 0.4-W, 2 to 20 GHz distributed amplifier are described in this paper. Small-signal gain is 5 dB and power-added efficiency is 15%. The amplifier is fabricated on ion-implanted GaAs, and achieves excellent performance through use of series gate capacitors and a tapered drain line. Circuit layout and optimization to obtain process insensitivity and first... View full abstract»

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  • State-of-the-Art Ion-Implanted Low-Noise GaAs MESFET and Monolithic Amplifier

    Publication Year: 1987, Page(s):115 - 117
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (256 KB)

    State-of-the-art GaAs low-noise MESFET and monolithic amplifier have been fabricated using a high yield, planar, ion-implantation process. A 0.5 µm-gate FET has achieved 1.2 dB noise figure with 8.8 dB associated gain at 12 GHz and 1.7 dB noise figure with 6.6 dB associated gain at 18 GHz. A two-stage monolithic amplifier using this FET process has achieved 1.8 dB noise figure with 23.6 dB as... View full abstract»

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  • Millimeter-Wave Monolithic Gunn Oscillators

    Publication Year: 1987, Page(s):11 - 13
    Cited by:  Papers (3)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (528 KB)

    A millimeter-wave monolithic GaAs Gunn oscillator has been designed, fabricated and tested. Epitaxial layers were grown by conventional vapor phase epitaxy on semi-insulating substrate. The matching circuit and bias circuitry were monolithically fabricated on the same chip as the active device. With no external tuning, the oscillator chip delivers 1 mW and 1.5 mW at 68.4 GHz and 44.9 GHz, respecti... View full abstract»

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  • Monolithic MBE GaAs Pin Diode Limiter

    Publication Year: 1987, Page(s):35 - 37
    Cited by:  Papers (9)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (184 KB)

    A broadband MBE GaAs PIN/NIP diode limiter has demonstrated 15 dB of isolation with a +32.5 dBm input signal while maintaining less than 0.25 dB of small-signal insertion loss from 0.05 GHz to 14 GHz. These results were obtained by incorporating vertical GaAs PIN/NIP diodes in a shunt-loaded microstrip configuration. View full abstract»

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