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Microwave and Millimeter-Wave Monolithic Circuits

Issue 1 • May 31 1983-June 1 1983

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  • [Front cover - 1987 MWSYM]

    Publication Year: 1987, Page(s): f1
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  • Message from the General Chairman [1987 MWSYM]

    Publication Year: 1987, Page(s): iii
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  • 1987 Symposium Microwave and Millimeter-Wave Monolithic Circuits Steering and Technical Program Committee (1987 [MWSYM])

    Publication Year: 1987, Page(s): iv
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  • Sponsors (1987 [MWSYM])

    Publication Year: 1987, Page(s):i - ii
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  • Table of contents

    Publication Year: 1987, Page(s):viii - x
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  • 1987 IEEE Microwave and Millimeter Wave Monolithic Circuits Steering and Technical Program Committee (1987 [MWSYM])

    Publication Year: 1987, Page(s):vi - vii
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  • Message from the Technical Program Chairman [1987 MWSYM]

    Publication Year: 1987, Page(s): v
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  • [Back cover - 1987 MWSYM]

    Publication Year: 1987, Page(s): b1
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  • A Low Noise GaAs MMIC Satellite Downconverter for the 6 to 4 GHz Band

    Publication Year: 1987, Page(s):139 - 142
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (488 KB)

    An all GaAs MMIC wideband 6 to 4 GHz downconverter technology demonstrator has been designed, developed, fabricated and tested. The module achieves an overall conversion gain of 67 dB with a 3.2 dB noise figure. The MMIC chip set developed includes an LNA, an active splitter, phase shifters, a mixer, broadband power combiners and an IF amplifier. The assembly represents a significant size and weig... View full abstract»

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  • A Low Cost Packaging/Testing Procedure for Manufacturing GaAs MMIC

    Publication Year: 1987, Page(s):135 - 137
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (408 KB)

    The development of a low cost, high throughput testing/packaging procedure for GaAs MMIC is described. Automated on-wafer RF and DC testing is essential for volume production of MMIC chips. However most MMIC circuits cannot be tested at wafer level due to lack of proper RF test environment. The proposed frame tape chip carrier approach takes full advantage of the RF probe system. This technique re... View full abstract»

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  • Low Cost MMIC Insertion Using Thick Film Processing

    Publication Year: 1987, Page(s):131 - 133
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    Multilayer thick-film circuits have been developed to provide single supply biasing and reactive matching to MMIC chips. The result is a method of achieving large amounts of gain at extremely low cost. View full abstract»

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  • Stability and Reliability Investigation on Fully ECL Compatible High Speed- Logic ICs.

    Publication Year: 1987, Page(s):49 - 52
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (544 KB)

    The electrical characteristics stability and reliability were investigated on newly developed high speed GaAs logic ICS. A resistor-loaded source-coupled FET logic (SCFL) was employed as a basic circuit architecture. The selectively epitaxial grown n+ - GaAs layers were aclopted for the contact regions of the WSi self-aligned gate FET. Maximum operating data rate of more than 2.6 Gb/s w... View full abstract»

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  • Successful Automated Alloy Attachment of GaAs MMIC's

    Publication Year: 1987, Page(s):127 - 129
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (472 KB)

    Automated alloy attachment of GaAs MMIC's is presented utilizing a reflow furnace for attachment of multiple devices at one time rather than manual scrub of each monolithic separately. Reflow characteristics of a variety of solders were analyzed as well as behavior of those solders during long term temperature bake and during 1000 cycles of thermal cycling. RF and thermal impedance data was measur... View full abstract»

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  • A Monolithic GaAs 3-Bit Phase Quantization Sampler

    Publication Year: 1987, Page(s):43 - 47
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (464 KB)

    This paper describes the analysis, design, and development of a high-speed A/D and D/A converter using phase-quantization sampling. A monolithic GaAs A/D and D/A converter has been demonstrated within a RF signal acquisition system. Performance data on the monolithic IC reveals that the 3-bit quantization system exhibits signal reconstruction with harmonic suppression exceeding -25 dB across an IF... View full abstract»

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  • Wide-Band Monolithic GaAs Phase Detector for Homodyne Reception

    Publication Year: 1987, Page(s):123 - 125
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (240 KB)

    A multipurpose, 0, 04 - 4 GHz, monolithic GaAs detector circuit has been fabricated. It shows a sensitivity of 2.5 V/rad with a DC offset of 300 mV for a differential dynamic range of 8V. It has been successfully tested as a phase detector in a homodyne receiver over L and S bands. View full abstract»

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  • A New Method of Analyzing and Modeling Integrated Optoelectronic Components

    Publication Year: 1987, Page(s):39 - 41
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (776 KB)

    Using a mode matching technique, a modular microwave equivalent circuit incorporating both guided and continuum spectra has been developed to model integrated optoelectronic components accurately with limited computational effort. The analysis is verified with experiments on GaAs rib waveguides and directional and three guide couplers. View full abstract»

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  • A Low Noise Distributed Amplifier with Gain Control

    Publication Year: 1987, Page(s):119 - 122
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (496 KB)

    A 2 to 18GHz monolithic GaAs distributed amplifier has been developed with 17dB nominal gain, less than 2.0:1 input and output VSWR, less than 6.0dB noise figure, and greater than 40dB gain control . The chip size at 3.0 sq. mm. (1.63mm by 1.88mm) makes it cost effective for a wide variety of applications. View full abstract»

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  • Monolithic MBE GaAs Pin Diode Limiter

    Publication Year: 1987, Page(s):35 - 37
    Cited by:  Papers (9)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (184 KB)

    A broadband MBE GaAs PIN/NIP diode limiter has demonstrated 15 dB of isolation with a +32.5 dBm input signal while maintaining less than 0.25 dB of small-signal insertion loss from 0.05 GHz to 14 GHz. These results were obtained by incorporating vertical GaAs PIN/NIP diodes in a shunt-loaded microstrip configuration. View full abstract»

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  • State-of-the-Art Ion-Implanted Low-Noise GaAs MESFET and Monolithic Amplifier

    Publication Year: 1987, Page(s):115 - 117
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (256 KB)

    State-of-the-art GaAs low-noise MESFET and monolithic amplifier have been fabricated using a high yield, planar, ion-implantation process. A 0.5 µm-gate FET has achieved 1.2 dB noise figure with 8.8 dB associated gain at 12 GHz and 1.7 dB noise figure with 6.6 dB associated gain at 18 GHz. A two-stage monolithic amplifier using this FET process has achieved 1.8 dB noise figure with 23.6 dB as... View full abstract»

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  • An 8-15 GHz GaAs Monolithic Frequency Converter

    Publication Year: 1987, Page(s):31 - 34
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (520 KB)

    An MMIC frequency converter with an RF bandwidth of 8-15 GHz and an IF bandwidth of 1.5 GHz has been designed and built. The MMlC chip has15 dB conversion gain and includes a two-stage RF amplifier, a two-stage LO buffer amplifier, a double-balanced mixer and a three-stage IF amplifier. This high level of integration is realized on a 48 x 96 mil area, resulting in good RF yields. The circuit emplo... View full abstract»

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  • A 2-20 GHz, High-Gain, Monolithic HEMT Distributed Amplifier

    Publication Year: 1987, Page(s):109 - 113
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (632 KB)

    A low-noise 2-20 GHz monolithic distributed amplifier utilizing 0.3-micron gate-length HEMT devices has achieved 11-dB +- 0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved mid-band (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-b... View full abstract»

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  • A Distributed Monolithic 2-18 GHz Dual-gate FET Mixer

    Publication Year: 1987, Page(s):27 - 30
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (280 KB)

    A novel broadband mixer topology, which can be implemented using either monolithic or discrete integrated circuit methods, has been developed using distributed design techniques. The MMIC mixer exhibits excellent 2-18 GHz conversion gain performance with signal handling capabilities and LO drive requirements similar to conventional diode double-balanced circuits. View full abstract»

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  • 1-6 GHz GaAs MMIC Linear Attenuator with Integral Drivers

    Publication Year: 1987, Page(s):105 - 107
    Cited by:  Papers (9)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (192 KB)

    This paper describes the performance of a voltage-controlled attenuator with a 12 dB linear attenuation vs. control voltage range. This linear attenuator greatly facilitates the realization of both closed and open loop gain compensation networks. Over the -55°C to 85°C range the attenuator recorded a 7.2 +- 1 dB/V linear transfer function while using only 25 mW from a single 4 V power su... View full abstract»

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  • A Low Current, High Gain Monolithic Amplifier Covering 5-20 GHz Bandwidth

    Publication Year: 1987, Page(s):23 - 26
    Cited by:  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (312 KB)

    A monolithic amplifier has been developed using a three-stage structure with feedback input/output stages and a reactively matched middle stage. The amplifier has exhibited greater than 12dB gain across 5-20 GHz bandwidth at a bias current of 40mA. The current to gain efficiency of 3.3mA/dB is the highest ever reported for a monolithic amplifier covering this bandwidth. The VSWR is less than 2.0:1... View full abstract»

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  • Wideband GaAs MMIC Receiver

    Publication Year: 1987, Page(s):101 - 103
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (464 KB)

    A wideband GaAs MMIC receiver module has been developed using half-micron gate MESFET technology. The fabrication process used is optical lithography with ion-implanted undoped LEC GaAs wafers. The module consists of three generic monolithic chips: an RF amplifier, an IF amplifier, and an image rejection filter which is integrated on a dual-gate MESFET mixer chip. The RF input frequency is 6 to 10... View full abstract»

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