Microwave and Millimeter-Wave Monolithic Circuits

Issue 1 • May 31 1983-June 1 1983

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  • [Front cover - 1987 MWSYM]

    Publication Year: 1987, Page(s): f1
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  • Message from the General Chairman [1987 MWSYM]

    Publication Year: 1987, Page(s): iii
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  • 1987 Symposium Microwave and Millimeter-Wave Monolithic Circuits Steering and Technical Program Committee (1987 [MWSYM])

    Publication Year: 1987, Page(s): iv
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  • Sponsors (1987 [MWSYM])

    Publication Year: 1987, Page(s):i - ii
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  • Table of contents

    Publication Year: 1987, Page(s):viii - x
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  • 1987 IEEE Microwave and Millimeter Wave Monolithic Circuits Steering and Technical Program Committee (1987 [MWSYM])

    Publication Year: 1987, Page(s):vi - vii
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  • Message from the Technical Program Chairman [1987 MWSYM]

    Publication Year: 1987, Page(s): v
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  • [Back cover - 1987 MWSYM]

    Publication Year: 1987, Page(s): b1
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  • An 8-15 GHz GaAs Monolithic Frequency Converter

    Publication Year: 1987, Page(s):31 - 34
    Cited by:  Papers (8)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (520 KB)

    An MMIC frequency converter with an RF bandwidth of 8-15 GHz and an IF bandwidth of 1.5 GHz has been designed and built. The MMlC chip has15 dB conversion gain and includes a two-stage RF amplifier, a two-stage LO buffer amplifier, a double-balanced mixer and a three-stage IF amplifier. This high level of integration is realized on a 48 x 96 mil area, resulting in good RF yields. The circuit emplo... View full abstract»

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  • A Distributed Monolithic 2-18 GHz Dual-gate FET Mixer

    Publication Year: 1987, Page(s):27 - 30
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (280 KB)

    A novel broadband mixer topology, which can be implemented using either monolithic or discrete integrated circuit methods, has been developed using distributed design techniques. The MMIC mixer exhibits excellent 2-18 GHz conversion gain performance with signal handling capabilities and LO drive requirements similar to conventional diode double-balanced circuits. View full abstract»

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  • A Low Current, High Gain Monolithic Amplifier Covering 5-20 GHz Bandwidth

    Publication Year: 1987, Page(s):23 - 26
    Cited by:  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (312 KB)

    A monolithic amplifier has been developed using a three-stage structure with feedback input/output stages and a reactively matched middle stage. The amplifier has exhibited greater than 12dB gain across 5-20 GHz bandwidth at a bias current of 40mA. The current to gain efficiency of 3.3mA/dB is the highest ever reported for a monolithic amplifier covering this bandwidth. The VSWR is less than 2.0:1... View full abstract»

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  • A Producible 2 to 20 GHz Monolithic Power Amplifier

    Publication Year: 1987, Page(s):19 - 21
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (264 KB)

    The design, fabrication, and performance of a 0.4-W, 2 to 20 GHz distributed amplifier are described in this paper. Small-signal gain is 5 dB and power-added efficiency is 15%. The amplifier is fabricated on ion-implanted GaAs, and achieves excellent performance through use of series gate capacitors and a tapered drain line. Circuit layout and optimization to obtain process insensitivity and first... View full abstract»

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  • State-of-the-Art Ion-Implanted Low-Noise GaAs MESFET and Monolithic Amplifier

    Publication Year: 1987, Page(s):115 - 117
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (256 KB)

    State-of-the-art GaAs low-noise MESFET and monolithic amplifier have been fabricated using a high yield, planar, ion-implantation process. A 0.5 µm-gate FET has achieved 1.2 dB noise figure with 8.8 dB associated gain at 12 GHz and 1.7 dB noise figure with 6.6 dB associated gain at 18 GHz. A two-stage monolithic amplifier using this FET process has achieved 1.8 dB noise figure with 23.6 dB as... View full abstract»

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  • 44 GHz Monolithic Low Noise Amplifier

    Publication Year: 1987, Page(s):15 - 18
    Cited by:  Papers (24)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (344 KB)

    The design, fabrication, and performance of a single-stage 44 GHz monolithic HEMT low noise amplifier are described. The chip includes a single heterojunction HEMT with matching and biasing circuits. Greater than 5 dB gain was measured from 43.5 to 45.5 GHz and a noise figure of 5 dB with the associated gain of 5.5 dB was achieved at 44.5 GHz. The chip size is 1.25mm x 1.0mm. View full abstract»

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  • Wideband GaAs MMIC Receiver

    Publication Year: 1987, Page(s):101 - 103
    Cited by:  Papers (6)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (464 KB)

    A wideband GaAs MMIC receiver module has been developed using half-micron gate MESFET technology. The fabrication process used is optical lithography with ion-implanted undoped LEC GaAs wafers. The module consists of three generic monolithic chips: an RF amplifier, an IF amplifier, and an image rejection filter which is integrated on a dual-gate MESFET mixer chip. The RF input frequency is 6 to 10... View full abstract»

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  • A New Method of Analyzing and Modeling Integrated Optoelectronic Components

    Publication Year: 1987, Page(s):39 - 41
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (776 KB)

    Using a mode matching technique, a modular microwave equivalent circuit incorporating both guided and continuum spectra has been developed to model integrated optoelectronic components accurately with limited computational effort. The analysis is verified with experiments on GaAs rib waveguides and directional and three guide couplers. View full abstract»

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  • Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated Circuits

    Publication Year: 1987, Page(s):1 - 5
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (512 KB)

    This paper reviews the present status of GaAIAs/ GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with fmax above 100 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain of 200 per stage. Breakdown voltages (BVCBO) above 20 V a... View full abstract»

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  • Wide-Band Monolithic GaAs Phase Detector for Homodyne Reception

    Publication Year: 1987, Page(s):123 - 125
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (240 KB)

    A multipurpose, 0, 04 - 4 GHz, monolithic GaAs detector circuit has been fabricated. It shows a sensitivity of 2.5 V/rad with a DC offset of 300 mV for a differential dynamic range of 8V. It has been successfully tested as a phase detector in a homodyne receiver over L and S bands. View full abstract»

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  • A 2-20 GHz, High-Gain, Monolithic HEMT Distributed Amplifier

    Publication Year: 1987, Page(s):109 - 113
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (632 KB)

    A low-noise 2-20 GHz monolithic distributed amplifier utilizing 0.3-micron gate-length HEMT devices has achieved 11-dB +- 0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved mid-band (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-b... View full abstract»

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  • Millimeter-Wave Monolithic Gunn Oscillators

    Publication Year: 1987, Page(s):11 - 13
    Cited by:  Papers (3)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (528 KB)

    A millimeter-wave monolithic GaAs Gunn oscillator has been designed, fabricated and tested. Epitaxial layers were grown by conventional vapor phase epitaxy on semi-insulating substrate. The matching circuit and bias circuitry were monolithically fabricated on the same chip as the active device. With no external tuning, the oscillator chip delivers 1 mW and 1.5 mW at 68.4 GHz and 44.9 GHz, respecti... View full abstract»

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  • Ka-band Monolithic GaAs Power FET Amplifiers

    Publication Year: 1987, Page(s):97 - 100
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (576 KB)

    GaAs power MMIC amplifiers with an optimized FET structure operating at Ka-band have achieved a small-signal gain of 4.3 dB and an output power of 481 mw. These 1.7 x 0.9-mm MMICs include DC-blocking capacitors and bias networks. A cascaded four-stage amplifier has achieved a power gain of 18.9 dB and output power of 437 mw at 28 GHz. These results may represent the highest power/gain y... View full abstract»

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  • A Low Noise GaAs MMIC Satellite Downconverter for the 6 to 4 GHz Band

    Publication Year: 1987, Page(s):139 - 142
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    An all GaAs MMIC wideband 6 to 4 GHz downconverter technology demonstrator has been designed, developed, fabricated and tested. The module achieves an overall conversion gain of 67 dB with a 3.2 dB noise figure. The MMIC chip set developed includes an LNA, an active splitter, phase shifters, a mixer, broadband power combiners and an IF amplifier. The assembly represents a significant size and weig... View full abstract»

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  • Ion Implanted W-Band Monolithic Balanced Mixers for Broadband Applications

    Publication Year: 1987, Page(s):89 - 92
    Cited by:  Papers (10)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (272 KB)

    An all ion-implanted monolithic broadband balanced mixer fabricated on a GaAs substrate for operation at W-band frequencies is described. A deep implanted buried n+ layer was used to minimize the diode series resistance. Ohmic contacts were formed by standard alloying of planar eutectic AuGe metallization into the n+ layer. The mixer diode structure is completely compatible with GaAs MESFET-based ... View full abstract»

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  • Monolithic MBE GaAs Pin Diode Limiter

    Publication Year: 1987, Page(s):35 - 37
    Cited by:  Papers (9)  |  Patents (4)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (184 KB)

    A broadband MBE GaAs PIN/NIP diode limiter has demonstrated 15 dB of isolation with a +32.5 dBm input signal while maintaining less than 0.25 dB of small-signal insertion loss from 0.05 GHz to 14 GHz. These results were obtained by incorporating vertical GaAs PIN/NIP diodes in a shunt-loaded microstrip configuration. View full abstract»

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  • A Low Noise Distributed Amplifier with Gain Control

    Publication Year: 1987, Page(s):119 - 122
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract |PDF file iconPDF (496 KB)

    A 2 to 18GHz monolithic GaAs distributed amplifier has been developed with 17dB nominal gain, less than 2.0:1 input and output VSWR, less than 6.0dB noise figure, and greater than 40dB gain control . The chip size at 3.0 sq. mm. (1.63mm by 1.88mm) makes it cost effective for a wide variety of applications. View full abstract»

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