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Semiconductor Laser Conference, 2002. IEEE 18th International

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Semiconductor Laser Conference, 2002. IEEE 18th International

Date Sept. 29 2002-Oct. 3 2002

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Title History

2002 IEEE 18th International Semiconductor Laser Conference. Conference Digest (Cat. No.02CH37390)

Analog modulation dypamic range enhancement using injection-locked 1.55 /spl mu/m VCSELs

Microdisk lasers vertically coupled to output waveguides

ISLC 2002 Author Index

Investigation of the optical losses in photonic crystal laser cavities by varying the number of lattice periods

MOVPE-grown 1.3 μm emitting VCSEL with GaInNAs active region

First CW operation of 1.3 μm-range GaInNAsSb VCSELs and VCSEL array

Simulation and design of pump laser diodes for un-cooled applications

Gain, loss and α-factor in 2.5-μm In(Al)GaAsSb/GaSb Type-I QW lasers with 1W CW output power

High frequency operation of 1.57 μm laterally gain coupled DFB lasers with self aligned ohmic contacts and nickel surface gratings

Absence of filamentation in quantum-dot lasers. Theory and experiment

OMVPE grown 1.3 μm GaInNAs quantum well lasers

Design of a widely tunable modulated grating Y-branch laser using the additive Vernier effect for improved super-mode selection

High-power, widely-tunable sampled grating DBR laser integrated with a semiconductor optical amplifier

Bottom emitting 1.3 μm BH-FP laser with integrated 45° reflector and monitor photodiode

Spectral linewidth re-broadening and photon density distribution in 1550nm high power CW-DFB lasers

Analysis and optimization of high-power GaN lasers

Single-lobe, orthonormal-beam surface emission from 2nd-order DFB/DBR lasers with half-wave grating phase shift

High performance 1300-nm dilute-nitride quantum well lasers by MOCVD

Over 27 nm tuning range by mode locking of external cavity laser including a linearly chirped fiber Bragg grating

InAs-quantum-dots-based light emitting diodes with GaNAs strain-compensating layers

Influence of growth conditions on the optical gain of 1.3 μm (GaIn)(NAs)/GaAs lasers

High-performance vertical-cavity surface-emitting lasers with emission wavelengths from 650 nm to 670 nm

Realization of all-optical flip-flop using bistable laser diode with nonlinear directional coupler

Surface-emitting semiconductor lasers with multi-functional grating couplers

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