Advanced Thermal Processing of Semiconductors, 2002. RTP 2002. 10th IEEE International Conference of
Date 25-27 Sept. 2002
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10th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP 2002 (Cat. No.02EX574)
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PDF (145 KB)
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Conductive borides used for junction formation and integration with contacts in deep 0.1 /spl mu/m MOSFETs
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PDF (514 KB)
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Ten years of RTP conference
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PDF (448 KB)
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Rapid thermal processing of high dielectric constant gate dielectrics for sub 70 nm silicon CMOS technology
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PDF (257 KB)
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Pattern effects and how to explore them
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PDF (615 KB)
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An analytical approach to quantify the thermal budget in consideration of consecutive thermal process steps
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PDF (357 KB)
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Systems analysis applied to modeling dopant activation and TED in rapid thermal annealing
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PDF (316 KB)
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Physical characterization of high-k gate dielectric film systems processed by RTA and spike anneal
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PDF (632 KB)
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Impact of nitrogen doping on gate oxide integrity on 300 mm silicon wafers after RTP in hydrogen ambient
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PDF (394 KB)
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Advances in laser annealing technology for poly-Si material engineering and ultra-high-performance device fabrication
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PDF (605 KB)
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Low temperatures in RTP
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PDF (413 KB)
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Stress release for shallow trench isolation by single-wafer, rapid-thermal steam oxidation
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PDF (685 KB)
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Rapid isothermal batch processing
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PDF (757 KB)
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A study of ion implantation annealing resistance in InGaP/InGaAs/GaAs-epi structure applicable InGaAs-based HFET
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PDF (732 KB)
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Applications of rapid thermal process to nitridation of tungsten and denudation of WNx for poly-Si/Metal gates
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PDF (385 KB)
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