Advanced Thermal Processing of Semiconductors 9th Internationa Conference on RTP 2001
Date 25-29 Sept. 2001
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9th International Conference on Advanced Thermal Processing of Semiconductors. RTP 2001 (Cat. No.02EX513)
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PDF (318 KB)
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Comparative study on implant anneal using single wafer furnace and lamp-based rapid thermal processor
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PDF (498 KB)
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Effect of growth and annealing conditions on interface charge of dry and wet oxides grown using rapid thermal oxidation
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PDF (677 KB)
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Driving 100 nm and below 300 mm manufacturing solutions - an era of single wafer processing, factory efficiencies, and new materials and technology introductions at reduced thermal budget and improved cycle time
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PDF (1476 KB)
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A thermal annealing of ion-implanted silicon
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PDF (619 KB)
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Device and material issues related to integration of junctions with contacts in deep 0.1 μm MOSFETs
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PDF (443 KB)
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Physical and chemical constraints on the application of rapid thermal processing to the deposition and post-deposition processing of alternative high-k gate dielectrics
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PDF (1459 KB)
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Comparison of effects from wafer backside films on temperature uniformity in dual side lamp heated production RTP systems
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PDF (775 KB)
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Excimer-laser activation of dopants in silicon : a high-energy excimer laser source for a single shot and uniform treatment over a whole die area
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PDF (238 KB)
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Wet oxidation using single wafer furnace
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PDF (280 KB)
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Low temperatures in RTP
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PDF (202 KB)
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Activation mechanism for Si-implanted layer on a GaAs substrate according to P-coimplantation method
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PDF (764 KB)
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