By Topic

# IEEE Transactions on Nanotechnology

## Filter Results

Displaying Results 1 - 25 of 36
• ### Front Cover

Publication Year: 2013, Page(s): C1
| PDF (190 KB)
• ### IEEE Transactions on Nanotechnology publication information

Publication Year: 2013, Page(s): C2
| PDF (137 KB)

Publication Year: 2013, Page(s):657 - 658
| PDF (173 KB)
• ### Covering of Nanofibers on Polystyrene and PS/C60 Nanofiber Films and the Effects on Light Absorption and Surface Wettabilities

Publication Year: 2013, Page(s):659 - 661
Cited by:  Papers (1)
| | PDF (557 KB) | HTML

Fullerene (C60)-filled polystyrene (PS) nanofiber arrays are prepared using the anode aluminum oxide (AAO) template thermal molding technique. It is found that the filling of 5% fullerene and the forming of nanofibers on surfaces not only can alter the surface wettabilities, but they can boost light absorptions in UV-Visible frequencies. Sometimes, the effects of nanofibers on light absorption can... View full abstract»

• ### Role of Semiconducting Carbon Nanotubes in Crosstalk Reduction of CNT Interconnects

Publication Year: 2013, Page(s):662 - 664
Cited by:  Papers (4)
| | PDF (325 KB) | HTML

In this letter, we present a new method to reduce crosstalk of carbon nanotube (CNT)-based VLSI interconnects. For this, proper integration of semiconducting CNTs (s-CNTs) and a new contact geometry, where metallic CNTs are in the core and s-CNTs are in the periphery of the CNT bundle, is proposed. The coupling capacitance between adjacent interconnects is modeled and compared with and without s-C... View full abstract»

• ### Proposal for Graphene–Boron Nitride Heterobilayer-Based Tunnel FET

Publication Year: 2013, Page(s):665 - 667
Cited by:  Papers (4)
| | PDF (425 KB) | HTML

We investigate the gate-controlled direct band-to-band tunneling (BTBT) current in a graphene-boron nitride (G-BN) heterobilayer channel-based tunnel field effect transistor. We first study the imaginary band structure of hexagonal and Bernal-stacked heterobilayers by density functional theory, which is then used to evaluate the gate-controlled current under the Wentzel-Kramers-Brillouin approxima... View full abstract»

• ### Single Superparamagnetic Bead Detection and Direct Tracing of Bead Position Using Novel Nanocomposite Nano-Hall Sensors

Publication Year: 2013, Page(s):668 - 673
Cited by:  Papers (11)
| | PDF (658 KB) | HTML

We show that nanocomposite materials consisting of superparamagnetic nanoparticles embedded in a matrix are very good candidates for a novel generation of Hall nanosensors with high spatial and magnetic resolution, capable of detecting superparamagnetic beads suspended at different heights on top of the sensor. Two detection schemes were used: 1) static-the bead was centered on top of the sensor a... View full abstract»

• ### Reliability and Delay Analysis of Multihop Virus-Based Nanonetworks

Publication Year: 2013, Page(s):674 - 684
Cited by:  Papers (16)
| | PDF (649 KB) | HTML

Molecular communication is a new communication paradigm that allows nanomachines to communicate using biological mechanisms and/or components to transfer information (e.g., molecular diffusion, molecular motors). One possible approach for molecular communication is through the use of virus particles that act as carriers for nucleic acid-based information. This paper analyzes multihop molecular nan... View full abstract»

• ### Fe-Doped Armchair Graphene Nanoribbons for Spintronic/Interconnect Applications

Publication Year: 2013, Page(s):685 - 691
Cited by:  Papers (14)
| | PDF (692 KB) | HTML

In this study, we investigate structural stability, and electronic and transport properties of Fe terminated/doped armchair graphene nanoribbons (AGNR) through first-principles calculations based on density functional theory. Results show that substitutional Fe impurities have a stable bonding with AGNR and center of the ribbon is regarded as the most preferred doping site. The observed magnetic m... View full abstract»

• ### Electron-Field-Emission Properties of Gallium Compound by Ammonification of Ga 2O$_{3}$ Nanowires

Publication Year: 2013, Page(s):692 - 695
Cited by:  Papers (1)
| | PDF (528 KB) | HTML

The authors report the growth of β-Ga2O3 nanowires and the conversion of β-Ga2O3 nanowires to gallium nitride (GaN) nanowires through ammonification, and the fabrication of nanowires-based field emitters. The threshold field of Ga2O3 nanowires was 5.65 V/μm. After ammonification under 750, 800 and 900°C, ... View full abstract»

• ### Equivalent Electric Circuits for the Simulation of Carbon Nanotube-Epoxy Composites

Publication Year: 2013, Page(s):696 - 703
Cited by:  Papers (6)
| | PDF (641 KB) | HTML

Equivalent electric circuits allowing the simulation of the behavior of nanocomposites based on thermosetting resin and nanocarbon filler are presented. The electric circuits are constructed by employing a multistep simple procedure in which the values and number of the parameters are adjusted until a suitable criterion, based on the comparison between simulated and experimental frequency spectra ... View full abstract»

• ### Formation of Vertically Aligned Cobalt Silicide Nanowire Arrays Through a Solid-State Reaction

Publication Year: 2013, Page(s):704 - 711
Cited by:  Papers (4)
| | PDF (704 KB) | HTML

We report for the first time synthesis of high-density arrays of vertically well-aligned cobalt monosilicide (CoSi) nanowires (NWs) in a large area via a solid-state reaction. The vertical arrays of 1-μm-long Si NWs were first grown on a p-type (1 0 0) Si substrate by the aqueous electroless etching (AEE) method, and a 40-nm-thick Co layer was conformally deposited using a thermal atomic la... View full abstract»

• ### Formation of Highly Ordered Silicon Nanowires by a High-Speed Deep Etching

Publication Year: 2013, Page(s):712 - 718
Cited by:  Papers (2)
| | PDF (1214 KB) | HTML

We report the formation of highly ordered vertical silicon nanowires using a hydrogen-assisted deep reactive ion etching technique. Nanosphere lithography with 460- and 300-nm polystyrenes is employed to realize the etching mask for fabrication of sub-50-nm patterns. SiNWs can be achieved consequently with a top-down process using vertical etching of silicon where the underetching can be limited t... View full abstract»

• ### First-Principles Study of a Novel Molecular Rectifier

Publication Year: 2013, Page(s):719 - 724
Cited by:  Papers (5)
| | PDF (5305 KB) | HTML

Designing molecular structures to meet certain behavior has become an important step in the field of molecular electronics. Interestingly, linker groups between molecules and electrodes show a critical role in the characteristic of the molecular devices. In this theoretical paper, a molecular rectifier that offers rectification ratio of more than three orders of magnitude, while preserving high on... View full abstract»

• ### Fractal Electrode Formation in Metal–Insulator Composites Near the Percolation Threshold

Publication Year: 2013, Page(s):725 - 733
Cited by:  Papers (2)
| | PDF (1614 KB) | HTML

Over the past 20 years, there have been a variety of experiments that have revealed a large increase in the low-frequency capacitance of devices constructed from metal-insulator nanocomposite materials. These capacitive increases are typically reported as dramatic increases in the effective relative dielectric constants of the nanocomposite materials. A class of these materials that operate at roo... View full abstract»

• ### A Nanomagnet Logic Field-Coupled Electrical Input

Publication Year: 2013, Page(s):734 - 742
Cited by:  Papers (3)
| | PDF (717 KB) | HTML

We report an electric, field-coupled input scheme for nanomagnet logic (NML). Furthermore, input structures are integrated with CMOS compatible clock structures for NML. This paper describes the controlled switching of the magnetization state of a nanomagnet by applying a locally generated biasing field to a device that has been placed in a 0°/metastable state by a clad, current carrying cl... View full abstract»

• ### Material-Insensitive Feature Depth Control and Machining Force Reduction by Ultrasonic Vibration in AFM-Based Nanomachining

Publication Year: 2013, Page(s):743 - 750
Cited by:  Papers (13)
| | PDF (799 KB) | HTML

This paper investigates the effect of ultrasonic tip-sample vibration in regulating the fabricated feature depth and reducing machining force in ultrasonic vibration-assisted nanomachining with an atomic force microscope (AFM). Nanopatterns on aluminum and polymethyl methacrylate (PMMA) substrates are fabricated by the ultrasonic vibration-assisted nanomachining approach. It is demonstrated that u... View full abstract»

• ### The Synthesis and Effect of Copper Nanoparticles on the Tribological Properties of Lubricant Oils

Publication Year: 2013, Page(s):751 - 759
Cited by:  Papers (10)
| | PDF (899 KB) | HTML

Cu nanoparticles (NPs) are widely studied to understand how they work in lubricant oils to improve its tribological properties. This paper describes the synthesis and characterization of Cu NPs of different size (φ = 60 and 130 nm) carried out in EG and the dispersion procedure used to prepare nanolubricants containing different amounts of NPs (0.005 vol% -0.01 vol% -0.02 vol%). The base oi... View full abstract»

• ### A Localized Two-Bit/Cell Nanowire SONOS Memory Using Schottky Barrier Source-Side Injected Programming

Publication Year: 2013, Page(s):760 - 765
Cited by:  Papers (2)
| | PDF (662 KB) | HTML

A localized two-bit/cell silicon nanowire silicon-oxide-nitride-oxide-silicon memory is experimentally presented for the use in future multibit/cell or NOR Flash applications. Instead of conventional channel-hot-electron programming used in charge-trapping cells, the localized charge storages are performed using the Schottky barrier source-side electron programming. The selection of applying a dra... View full abstract»

• ### An Analytical Threshold Voltage Model for Triple-Material Cylindrical Gate-All-Around (TM-CGAA) MOSFETs

Publication Year: 2013, Page(s):766 - 774
Cited by:  Papers (14)
| | PDF (1194 KB) | HTML

In this paper, an analytical threshold voltage model is proposed for a triple-material cylindrical gate-all-around MOSFET considering parabolic approximation of the potential along the radial axis. The center (axial) and the surface potential models are obtained by solving the 2-D Poisson's equation in the cylindrical coordinate system. This paper refutes the estimation of the natural length using... View full abstract»

• ### Size-Dependent Behavior of Piezoelectric Circular Ultrathin Films With Consideration of Surface Effects for NEMS Applications

Publication Year: 2013, Page(s):775 - 787
Cited by:  Papers (2)
| | PDF (915 KB) | HTML

In this paper, size-dependent electromechanical behavior of circular nanoplates made of piezoelectric materials is studied with consideration of materials surface properties. Gurtin-Murdoch theory for solid surfaces is used to generalize the classical plate model through an analytical method. Closed-form solutions based on Bessel functions with modified arguments are given for some normalized para... View full abstract»

• ### An Enhanced Cluster-based Network Model for Calcium Signaling

Publication Year: 2013, Page(s):788 - 795
Cited by:  Papers (4)
| | PDF (736 KB) | HTML

Nanonetwork is involved with a set of nanoscale components and their cooperative communication. Integrated with the biological units, molecular communication contributes to areas such as therapeutics, environment, food safety, and agriculture. In contrast to the Brownian motion of massive molecules and the DNA sequence transportation carried by flagellated bacterium, calcium signaling has a multin... View full abstract»

• ### Roles of Doping, Temperature, and Electric Field on Spin Transport Through Semiconducting Channels in Spin Valves

Publication Year: 2013, Page(s):796 - 805
Cited by:  Papers (4)
| | PDF (746 KB) | HTML

Manipulation of spin information in semiconductors has been the topic of both experimental and theoretical studies. In this paper, the theoretical compact models for the spin-relaxation length (SRL) in nondegenerately doped silicon and gallium arsenide are presented. These models account for the impact of impurity doping and phonons on mediating spin relaxation. In addition, the models are exhaust... View full abstract»

• ### Extraction of Channel Electron Effective Mobility in InGaAs/Al $_{bf 2}$O$_{bf 3}$ n-FinFETs

Publication Year: 2013, Page(s):806 - 809
Cited by:  Papers (9)
| | PDF (396 KB) | HTML

A compact set of equations based on the multiple subbands quasi-ballistic transport theory is developed, and is used to investigate the channel electron effective mobility in recently reported In0.53Ga0.47As/Al2O3 tri-gate n-FinFET. The extracted electron effective mobility μn is around 370 cm2/V·s at low Vg - V... View full abstract»

• ### Dimensional Analysis and Mechanical Properties Characterization of Carbon Nanofibers under Subzero Temperatures

Publication Year: 2013, Page(s):810 - 816
Cited by:  Papers (1)
| | PDF (598 KB) | HTML

The ability of carbon nanofibers grown on nanoelectrode chips for ultrafast detection of molecules down to parts per billion (ppb) with a response time in seconds and with a minimal usage of power has attracted the attention of materials researchers and nanotechnology explorers-for example, space research organizations. Application in chemical and biological sensing is being studied extensively. N... View full abstract»

## Aims & Scope

The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.

Full Aims & Scope

## Meet Our Editors

Editor-in-Chief
Fabrizio Lombardi
Dept. of ECE
Northeastern Univ.