Proceedings of the Fourteenth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.01CH37197)

20-20 June 2001

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  • Proceedings of the Fourteenth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.01CH37197)

    Publication Year: 2001
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    Freely Available from IEEE
  • Hop on board with safety

    Publication Year: 2001
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (41 KB) | HTML iconHTML

    Summary form only given. It is only possible to maintain a safe laboratory if all users accept the importance of safety protocols. At the Microlab at the University of California at Berkeley, there is a structure of peer training for users on new machines; this also serves as a conduit to maintain a culture among lab users to encourage one another to be safe. In addition, there are a number of way... View full abstract»

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  • Role of fluorine in low temperature dopant activation of boron

    Publication Year: 2001
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (73 KB)

    Summary form only given. MOS device scaling requires a decrease in lateral dimensions and in junction depths. Current projections call for junction depths in the 300 /spl Aring/ range in order to reduce short-channel effects of 0.07 /spl mu/m gate-length technologies. The key limiting factors in boron doped junctions are transient enhanced diffusion (TED) and the more recent concept of boron enhan... View full abstract»

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  • Optical lithography using excimer lamps: 172 nm and beyond

    Publication Year: 2001
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (66 KB) | HTML iconHTML

    Summary form only given. The Semiconductor Industry Association (SIA) has set 100 nm features as a goal in microelectronics by 2003. In order to achieve this goal, many research groups are studying lithography techniques such as DUV, direct write e-beam, synchrotron, excimers, and X-ray/EUV light sources. Excimer lamps as a photolithography light source offer many advantages that include high brig... View full abstract»

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  • MEMS sensor for detecting mercury at ppb levels

    Publication Year: 2001
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (62 KB)

    Summary form only given. Sub-surface science research is necessary to assist the Department of Energy (DOE) in solving complex environmental problems associated with hazardous contaminants in soil and groundwater at DOE sites. These contaminants include hazardous metals such as mercury. A novel mercury ion selective electrode has been constructed to have a strongly coordinating macrocyclic ligand ... View full abstract»

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  • Materials development and current transport in vacuum microelectronic devices

    Publication Year: 2001, Page(s):140 - 143
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (656 KB) | HTML iconHTML

    A simple vacuum diode structure has been fabricated using standard microelectronic processing and the electron transport has been investigated. Tungsten and tungsten-carbon thin films have been evaluated and the work function of the tungsten-carbon emitter material was determined to be ~3.6 eV. A sharpened emitter structure was also fabricated which had a significantly lower turn-on field due to a... View full abstract»

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  • Optimization of spin-on-glass process for multilevel metal interconnects

    Publication Year: 2001, Page(s):136 - 139
    Cited by:  Papers (4)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (640 KB) | HTML iconHTML

    Spin-on-glass (SOG), an interlayer dielectric material applied in liquid form to fill narrow gaps in the sub-dielectric surface and thus conducive to planarization, is an alternative to silicon dioxide (SiO 2) deposited using CVD processes. The similar electrical properties between SOG and silicon dioxide guarantee that the SOG technique will provide comparable benefits to SiO2 View full abstract»

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  • Exposing freshman to microelectronics fabrication as part of an innovative materials science course

    Publication Year: 2001, Page(s):117 - 119
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (256 KB) | HTML iconHTML

    An innovative materials science course for first year students has been developed with the support of the National Science Foundation. The goal of this course is for students to be able to make design decisions based on experimental data. To attain this goal, an interactive recitation has replaced the lecture as the key learning experience, and the laboratory exercises are fully integrated into th... View full abstract»

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  • A unique, multi-level-team microfabrication learning environment at Boise State University

    Publication Year: 2001, Page(s):114 - 116
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (224 KB) | HTML iconHTML

    A unique, multi-level-team microfabrication learning environment involving students and faculty from both Engineering and Applied Technology has been established at Boise State University. This two-semester laboratory sequence, which begins with safety/tool training, progresses to process modules, and ends with an integrated four-mask PMOS process, is team-taught by faculty from both the Electrica... View full abstract»

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  • Microelectronics process engineering program at SJSU

    Publication Year: 2001, Page(s):128 - 134
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (352 KB) | HTML iconHTML

    At present, there is a need for engineers with CMOS processing knowledge, statistical process control (SPC) skills, and the ability to work in an interdisciplinary team environment and assume leadership roles. San Jose State University are developing an interdisciplinary lab-based microelectronics process engineering program that introduces SPC and DOE to students in a microelectronics manufacturi... View full abstract»

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  • CMOS as a research platform

    Publication Year: 2001, Page(s):70 - 73
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (664 KB) | HTML iconHTML

    In order to facilitate research on a variety of new materials, device structures, and microelectromechanical systems, the Microelectronics Research Center of Georgia Tech has established silicon CMOS processing baselines. Together with a rigorous equipment and process training procedure, a research collaboration and service protocol, and a group of dedicated people, a research platform has been fo... View full abstract»

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  • The Center for Nanoscopic Materials Design

    Publication Year: 2001, Page(s):8 - 15
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (792 KB) | HTML iconHTML

    The Center for Nanoscopic Materials Design was established at the University of Virginia in September 2000 as one of four new National Science Foundation-sponsored Materials Research Science and Engineering Centers (MRSEC). This Center seeks to define broad new directions in the nanoscale design and control of self-assembled epitaxial semiconductor quantum dots, by providing new algorithms for und... View full abstract»

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  • The creation of microelectronics-based visualizations to enhance science education and literacy

    Publication Year: 2001, Page(s):110 - 113
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (496 KB) | HTML iconHTML

    This paper describes an ongoing project to create web-based visualizations based on microelectronics and its underlying science. The visualizations are being designed to serve diverse groups ranging from high school science students, to upper division engineering undergraduates, to graduate business students. By substituting highly visual and interactive explanations for mathematical expressions, ... View full abstract»

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  • Micro-processing using plasma source ion implantation

    Publication Year: 2001, Page(s):126 - 127
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (200 KB) | HTML iconHTML

    Plasma source ion implantation is a viable technique to modify surface properties to achieve desired mechanical, electrical, and optical properties on microscopic surface profiles. Implanting ions into materials has been shown by many to increase surface hardness, reduce friction, and resist corrosion. Preliminary work performed on test electrodes has shown an increase in the suppression of field ... View full abstract»

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  • Silicon-on-insulator based modulators and switches for high speed optical telecommunications

    Publication Year: 2001, Page(s):64 - 69
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (688 KB) | HTML iconHTML

    This study investigates an out-of-plane optical coupling geometry into silicon-on-insulator (SOI) technology in order to create data transmitters and receivers for optical communications wavelengths. This geometry can, in principle, provide both high switching contrasts and high speeds. The study is carried out in SOI waveguides equipped with optically-resonant periodic electrode (ORPEL) structure... View full abstract»

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  • Design, fabrication and testing of CMOS operational amplifiers as training tool in analog integrated circuit design

    Publication Year: 2001, Page(s):193 - 196
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (296 KB) | HTML iconHTML

    In this paper, a design procedure and successful experimental results obtained from it are reported for implementing internally compensated operational amplifiers powered from a single power supply and with high gain-bandwidth product, good slew-rate, low output impedance and good drive levels. The procedure was developed for an in-house training course on “analog integrated circuit design&r... View full abstract»

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  • Silicon to tungsten ratio determination in tungsten silicide using XRF

    Publication Year: 2001, Page(s):46 - 50
    Cited by:  Papers (1)  |  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (328 KB) | HTML iconHTML

    The use of X-ray fluorescence (XRF) to measure the silicon to tungsten (Si-to-W) ratio in sputter-deposited tungsten silicide films from a sintered WSix target has been described. It is important to know and control the Si-to-W ratio to maintain good gate stack properties and hence a quick and simple measurement technique is needed for Si-to-W ratio determination. Other techniques such ... View full abstract»

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  • Simulation of Georgia Tech's CMOS baseline using TSUPREM-4 and MEDICI

    Publication Year: 2001, Page(s):179 - 185
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (720 KB) | HTML iconHTML

    The Microelectronics Research Center of Georgia Tech has established silicon CMOS processing baselines as an important part of its research platform that provides supports to research communities around the world for research into numerous devices and fabrication techniques. Successful process runs include 1 μm double polysilicon and double metal CMOS, 2 μm double polysilicon and double meta... View full abstract»

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  • Microelectronics/nanoelectronics and the 21st century

    Publication Year: 2001, Page(s):2 - 7
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (376 KB) | HTML iconHTML

    The advent of nonphotolithographic lithography, new electronic materials, and the devices, circuits, and systems they enable will see the electronics revolution of the 20th century to continue well into the 21st century. New lithographic techniques using tools such as nano-imprint and AFM are expected to lead to electronic circuits with lateral spatial resolution under 10 nm. When coupled with inn... View full abstract»

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  • Workforce development: a critical interaction between high technology industries and academia

    Publication Year: 2001, Page(s):33 - 35
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (304 KB) | HTML iconHTML

    A healthily vibrant region that can support microelectronics and other high technology industries requires a plentiful supply of skilled employees. This workforce spans a spectrum of skills and capabilities. Contributing employees cover a range that includes operational personnel through to skilled professionals. The educational needs and requirements of these workers are durative, i.e. wherever s... View full abstract»

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  • Virtual-reality in microelectronics laboratory instruction

    Publication Year: 2001, Page(s):105 - 109
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (904 KB) | HTML iconHTML

    Computer simulations are powerful educational tools. They allow students to explore and interact with worlds not normally accessible. Places or events too small, too expensive, too slow, too fast, or too dangerous to enter can be explored with virtual reality. The microelectronics laboratory is one of those worlds. This paper describes a virtual-reality microelectronics laboratory that was written... View full abstract»

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  • Is backside photoemission necessary? [IC failure analysis]

    Publication Year: 2001, Page(s):149 - 152
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (792 KB)

    This paper presents a case to justify the purchase of commercially available, state of the art, backside-capable photoemission microscope (PEM) systems to support failure analysis and yield learning for DRAM and flash memory manufacturers. An investigation was conducted to evaluate the existing emission capabilities at Dominion Semiconductor (DSC), examine the possibility of upgrades and if necess... View full abstract»

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  • Undergraduate research opportunities in microelectronics at Boise State University

    Publication Year: 2001, Page(s):78 - 82
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (440 KB) | HTML iconHTML

    Several opportunities exist for undergraduates in the microelectronics area at Boise State University. This paper describes the Research Experience for Undergraduates (REU) program funded by the National Science Foundation and other opportunities that have resulted for undergraduates due to external support. BSU became a NSF REU site for microelectronics research in 1999. Each year, 10 students ar... View full abstract»

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  • Beam shaping of ultra-short laser pulses

    Publication Year: 2001, Page(s):60 - 63
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB) | HTML iconHTML

    We present a theoretical analysis for the lossless beam shaping of ultra-short laser pulses based on geometrical optics calculations by considering a phase element in conjunction with a Fourier transform lens. The theory developed for continuous waves (JOSA A vol. 13, p. 751, 1996) is extended to include a Gaussian frequency distribution for the laser pulse. We compare two numerical methods for so... View full abstract»

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  • Microwave monolithic selective tunable amplifiers using space-charge waves in the GaAs films

    Publication Year: 2001, Page(s):190 - 192
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (536 KB) | HTML iconHTML

    A new kind of IC based on space-charge waves at GaAs films is considered. The devices combine functions of microwave/millimeter range complex signal formers and optimal receivers. The unique property of the devices is their capability to work at the carrier frequency, particularly directly at the microwave receiver input, protecting the whole system from jamming View full abstract»

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