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Device and Materials Reliability, IEEE Transactions on

Issue 2 • Date June 2013

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Displaying Results 1 - 17 of 17
  • [Front cover]

    Publication Year: 2013 , Page(s): C1
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  • IEEE Transactions on Device and Materials Reliability publication information

    Publication Year: 2013 , Page(s): C2
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  • Table of contents

    Publication Year: 2013 , Page(s): 337
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  • Introduction to the Special Issue on the 50th International Reliability Physics Symposium

    Publication Year: 2013 , Page(s): 338 - 339
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  • Failure Analysis of Asymmetric Aging Under NBTI

    Publication Year: 2013 , Page(s): 340 - 349
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (957 KB) |  | HTML iconHTML  

    With CMOS technology scaling, design for reliability has become an important step in the design cycle and increased the need for efficient and accurate aging simulation methods during the design stage. NBTI-induced delay shifts in logic paths are asymmetric in nature, as opposed to the averaging effect due to recovery assumed in traditional aging analysis. Timing violations due to aging, in partic... View full abstract»

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  • Transistor Performance Impact Due to Die–Package Mechanical Stress

    Publication Year: 2013 , Page(s): 350 - 356
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (726 KB) |  | HTML iconHTML  

    Shifts in transistor performance due to mechanical stress resulting from interaction of die, packaging, test socketing, and board mount are discussed. Mechanical-stress-induced transistor drive current shifts are measured indirectly using ring oscillator frequencies. P and N effects are extracted independently using appropriately weighted oscillators, and P/N shifts in opposite directions agree wi... View full abstract»

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  • Analysis of the Reliability of AlGaN/GaN HEMTs Submitted to On-State Stress Based on Electroluminescence Investigation

    Publication Year: 2013 , Page(s): 357 - 361
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1170 KB) |  | HTML iconHTML  

    This paper presents a detailed analysis of the electroluminescence (EL) and short-term degradation processes related to hot electrons that occur in AlGaN/GaN-based high-electron mobility transistors (HEMTs) submitted to on-state stress. Based on optical and electrical characterization, we demonstrate that: 1) when biased in on-state, HEMTs emit a luminescence signal, which is uniformly distributed... View full abstract»

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  • Reliability Characterization Issues for Nanoscale Flash Memories: A Case Study on 45-nm NOR Devices

    Publication Year: 2013 , Page(s): 362 - 369
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1420 KB) |  | HTML iconHTML  

    This paper shows that the reliability characterization of nanoscale Flash memories requires an accurate control of the adopted experimental tests, preventing spurious issues to emerge and alter the basic conclusions on the investigated reliability constraints. To this aim, the paper reports a case study on a 45-nm NOR technology, where the experimental investigation of the activation energy for da... View full abstract»

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  • Foreword for the Special Section on ESD Modeling, Characterization, and Design

    Publication Year: 2013 , Page(s): 370
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  • Verification of Snapback Model by Transient I-V Measurement for Circuit Simulation of ESD Response

    Publication Year: 2013 , Page(s): 371 - 378
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1326 KB) |  | HTML iconHTML  

    It is demonstrated that if the compact model of a snapback-type device is calibrated using only pulsed I-V data, it may not correctly reproduce the device response to arbitrary electrostatic discharge (ESD) waveforms. Transient I-V measurements are demonstrated to improve the completeness of the device characterization and model verification. Given an accurately calibra... View full abstract»

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  • Comparison of FICDM and Wafer-Level CDM Test Methods

    Publication Year: 2013 , Page(s): 379 - 387
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1213 KB) |  | HTML iconHTML  

    The on-chip stresses induced by various charged device model (CDM) test methods are compared at both the package and wafer levels. Test methods studied include field-induced CDM (FICDM), wafer-level CDM (WCDM2), capacitively coupled transmission-line pulsing (CC-TLP), and very fast TLP (VF-TLP). The generated stresses are compared on the basis of voltage monitor readings and integrated circuit (IC... View full abstract»

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  • Novel Active ESD Clamps for High-Voltage Applications

    Publication Year: 2013 , Page(s): 388 - 397
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (2000 KB) |  | HTML iconHTML  

    Large power MOS transistors (bigMOS) have potential electrostatic discharge (ESD) protection capabilities and are often used in actively controlled ESD clamps. In high-voltage and especially automotive applications ranging typically from 10 to 100 V operation voltage, statically triggered active ESD clamps are often used due to their false triggering safety. This paper presents novel statically tr... View full abstract»

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  • IEEE International Integrated Reliability Workshop (IIRW)

    Publication Year: 2013 , Page(s): 398
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  • 2013 EDS J.J. Ebers Award call for nominations

    Publication Year: 2013 , Page(s): 399
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  • Call for Papers: 2013 IEEE Compound Semiconductor IC Symposium

    Publication Year: 2013 , Page(s): 400
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  • IEEE Transactions on Device and Materials Reliability information for authors

    Publication Year: 2013 , Page(s): C3
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  • [Blank page - back cover]

    Publication Year: 2013 , Page(s): C4
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Aims & Scope

IEEE Transactions on Device and Materials Reliability is published quarterly. It provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the manufacture of these devices; and the interfaces and surfaces of these materials.

Full Aims & Scope

Meet Our Editors

Editor-in-Chief
Anthony S. Oates
Taiwan Semiconductor Mfg Co.