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Semiconductor Thermal and Temperature Measurement Symposium, 1988. SEMI-THERM IV., Fourth Annual IEEE

Date 10-12 Feb. 1988

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Displaying Results 1 - 25 of 27
  • Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium (Cat. No.88CH2530-4)

    Publication Year: 1988
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    Freely Available from IEEE
  • Thermal characterization of plastic and ceramic surface-mount packages

    Publication Year: 1988
    Request Permissions | Click to expandAbstract | PDF file iconPDF (42 KB)  

    Summary form only given. The thermal performance of devices packaged with 28-, 44-, 68-, and 84-lead versions of the industry-standard plastic leaded chip carrier (PLCC) and also with 68-, 84-, 100-, and 124-lead plastic and ceramic flatpack components (PFP and CFP, respectively), are considered. Experimental data collected in both natural and forced convection conditions for individual components... View full abstract»

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  • Thermal analysis of microwave integrated circuits using a high resolution infrared imaging system

    Publication Year: 1988
    Request Permissions | Click to expandAbstract | PDF file iconPDF (40 KB)  

    Summary form only given. A high-resolution infrared imaging system (IRIS) used to analyze the temperature within a microwave integrated circuit (MIC) is reported. The system is used to assess the accuracy of thermal analyses of MICs. Data taken from an MIC transmitter, consisting of several subassemblies and containing heat-generating and heat-dissipating components, were compared to predicted per... View full abstract»

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  • Modeling and visualization of conductive temperature fields inside electronic component structures

    Publication Year: 1988
    Request Permissions | Click to expandAbstract | PDF file iconPDF (51 KB)  

    Summary form only given, as follows. A general numerical code is reported which simulates the heat transfer inside microelectronic components for different environmental conditions. A two-dimensional scheme was implemented with control-volume techniques to solve the transient heat conduction equation in a heterogeneous and orthotropic rectangular domain. Inside this domain, the geometry of a given... View full abstract»

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  • Thermal modeling with PC spreadsheets

    Publication Year: 1988 , Page(s): 40 - 49
    Request Permissions | Click to expandAbstract | PDF file iconPDF (584 KB)  

    It is shown how the structure of personal computer (PC) spreadsheet programs makes them an appropriate vehicle for use in multidimensional thermal modeling. The methodology of implementing spreadsheet solutions is presented, and memory requirements, iteration time, and the structure for parametric studies using PC spreadsheets are discussed. The energy balance approach to deriving the nodal equati... View full abstract»

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  • Package thermal resistance model dependency on equipment design

    Publication Year: 1988 , Page(s): 122 - 129
    Cited by:  Papers (18)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (608 KB)  

    A physical model is presented that describes mechanisms for operating-equipment junction-to-ambient thermal resistance in excess of a typical component manufacturer's data-sheet value by as much as a factor of four under constant cooling conditions. The model accounts for the discrepancy between system thermal performance of a package and data-sheet thermal resistance value which are not accompani... View full abstract»

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  • An analysis technique for a small pulsed source connected to a large sink with application to gallium arsenide IMPATT diodes

    Publication Year: 1988 , Page(s): 97 - 100
    Cited by:  Papers (2)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (260 KB)  

    A methodology using numerical techniques is presented for the thermal analysis of a physically small pulsed heat source which is closely coupled to a relatively large heat sink. The methodology consists of creating a hierarchy of finite-difference models. These models consist of a highly detailed source model and several progressively less detailed sink models. The proper node size and time step f... View full abstract»

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  • Junction-to-case thermal resistance-still a myth?

    Publication Year: 1988 , Page(s): 8 - 11
    Cited by:  Papers (11)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (208 KB)  

    After a brief review of MIL-STD-883C: Method 102 and SEMI Std. Doc. #1321 for junction-to-case thermal resistance (θJC) measurements, an experiment to measure θ JC of different K packages while altering the extrinsic variables is described. It is concluded that junction-to-case thermal resistance is not a physical constant: measurement conditions have a s... View full abstract»

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  • Cumulative bibliography of articles on semiconductor thermal and temperature testing

    Publication Year: 1988 , Page(s): 137 - 152
    Request Permissions | Click to expandAbstract | PDF file iconPDF (616 KB)  

    The bibliography given contains both journal and conference items, from as early as 1968, but primarily from 1980 to the present. All the entries listed in the bibliography provide information on semiconductor thermal and/or temperature characteristics, measurement techniques and results, hardware applications, and other pertinent information View full abstract»

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  • Isotherms in diamond heat sinks, non-linear heat transfer in an excellent heat condition

    Publication Year: 1988 , Page(s): 113 - 117
    Cited by:  Papers (2)  |  Patents (2)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (360 KB)  

    A small fraction of all natural diamonds, called Type 2A diamonds, has a very low nitrogen content. In those diamonds thermal conductivity is primarily limited by carbon isotopes and dislocations. The heat conductivity at room temperature is typically 20 W/cm/°C, the highest value for any known material at room temperature, but its heat conductivity is a nonlinear function of temperature. The ... View full abstract»

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  • Thermal design of integrated circuit devices

    Publication Year: 1988 , Page(s): 118 - 121
    Cited by:  Papers (6)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (228 KB)  

    An analytical solution derived by the authors (1986) for the thermal analysis of multisource, four-layer ICs has been useful in simulating device thermal properties. However, in the simulation of structures with large chip-to-heat-source size ratios, the computer program based on the exact solution requires a substantial amount of CPU time, making it impossible to carry out real-time thermal desig... View full abstract»

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  • Experimental thermal characterization of VLSI packages

    Publication Year: 1988 , Page(s): 19 - 24
    Cited by:  Papers (7)  |  Patents (3)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (480 KB)  

    To insure optimum performance of circuits, highly accurate measurements are needed to characterize the thermal performance of very large-scale integrated circuit (VLSI) packages. To do this, a temperature-sensitive device inside the package is measured after calibrating the devices with respect to temperature variations. The different methodologies used to calibrate packaged devices are described.... View full abstract»

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  • A study of thermal performance of packages using a new test die

    Publication Year: 1988 , Page(s): 50 - 54
    Cited by:  Papers (2)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (276 KB)  

    A test die that uses power diodes for die heating and a string of emitter-base diodes for temperature sensing was designed and used for the thermal characterization of various very large-scale integration (VLSI) packages. The power diode, consisting of 100 minimum-geometry emitters, is contained entirely in the lower portion of the die. The temperature-sensing diodes consist of a string of 17 emit... View full abstract»

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  • PWB thermal modeling computer tools at Texas Instruments

    Publication Year: 1988 , Page(s): 105 - 111
    Cited by:  Papers (2)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (588 KB)  

    Printed wiring board (PWB) thermal modeling tools developed at Texas Instruments are described. These general programs help automate the processes of: finite-difference-model generation for PWBs and other rectangular, layered structures; definition of heat inputs to a thermal model of a PWB due to electronic components; and calculation of component junction temperatures for devices located on a mo... View full abstract»

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  • TATTL: the automated thermal test lab

    Publication Year: 1988 , Page(s): 153 - 158
    Request Permissions | Click to expandAbstract | PDF file iconPDF (528 KB)  

    The development of the automated thermal test lab (TATTL) at Advanced Micro Devices originated in the need to improve the efficiency and resource utilization for the thermal characterization services provided by the Materials Research Laboratory. TATTL is a set of Fortran-77 real-time data acquisition and control modules which integrate the variety of instrumentation required for the performance o... View full abstract»

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  • Low speed wind tunnel testing

    Publication Year: 1988 , Page(s): 31 - 39
    Cited by:  Papers (8)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (672 KB)  

    An introduction to wind tunnel design, wind tunnel data uncertainty analysis, and nondimensional presentation of measured data is presented. The primary components of a wind tunnel and the purposes of each are discussed. The importance of delivering uniform flow to the test section cross section is considered with regard to the effect of nonuniform flow on the measured thermal performance of a dev... View full abstract»

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  • Statistical analysis of power module thermal test equipment performance

    Publication Year: 1988 , Page(s): 25 - 29
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    A computer-based system for determining the thermal resistance of power semiconductor modules was developed and characterized for precision by the gage study method. Results are presented to illustrate the usefulness of this statistical method for determining the measuring capability of the system. The method provides a means for demonstrating vendor/customer test capability which can reduce poten... View full abstract»

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  • Factors affecting semiconductor device thermal resistance measurements

    Publication Year: 1988 , Page(s): 12 - 18
    Cited by:  Papers (9)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (448 KB)  

    The usual industry practice is to assume that thermal resistance of a semiconductor device is constant, and thus independent of power dissipation level or ambient environment temperature. In fact, thermal resistance is not a constant and varies with both power and temperature. The degree of variation is dependent on several factors: the range of power and temperature variation, the type of device,... View full abstract»

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  • A finite element thermal analysis program for square shaped packages and subsequent experimental comparisons

    Publication Year: 1988 , Page(s): 101 - 104
    Cited by:  Papers (1)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (352 KB)  

    A finite-element thermal analysis program is presented. A description of the finite element used in the program is provided along with an explanation of the matrix storage scheme and simultaneous equation solution which significantly reduces memory requirements. A specific model of a real package is given along with a discussion of the development of realistic convection boundary conditions. A com... View full abstract»

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  • Effect of surface flatness on interface heat transfer

    Publication Year: 1988 , Page(s): 88 - 95
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    Data and conclusions are presented on the effect of surface flatness on heat transfer across an interface between two plates. The effect of thermal grease (Dow Corning 340 silicone heat sink compound) on interface heat transfer is also presented. Test data yields three conclusions: interface heat transfer varies linearly over the tested range of surface flatness (0.010 to 0.035 in); thermal grease... View full abstract»

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  • A review of thermal characterization of power transistors

    Publication Year: 1988 , Page(s): 1 - 7
    Cited by:  Papers (25)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (648 KB)  

    The thermal characteristics of power transistors and their measurement are discussed. The devices discussed include bipolar transistors and metal-oxide-semiconductor field-effect transistors (MOSFETs). Measurement problems common to these devices are addressed, such as general methods for measuring device temperature, control of thermal environment, selection of a temperature-sensitive electrical ... View full abstract»

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  • Designing with thermal impedance

    Publication Year: 1988 , Page(s): 55 - 61
    Cited by:  Papers (14)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (460 KB)  

    Thermal impedance and the main factors influencing it in plastic semiconductor packages are discussed. A test procedure is presented for measuring and quantifying the thermal characteristics of semiconductor packages. Using these test methods the thermal impedance of standard integrated circuit packages under pulsed and DC conditions were evaluated. Experimental evaluations of the thermal performa... View full abstract»

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  • Effects of radiation on enhanced electronic cooling

    Publication Year: 1988 , Page(s): 130 - 135
    Cited by:  Papers (1)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (484 KB)  

    The radiation component of heat loss and the effect of heat sink orientation on the radiant interchange of heat between electronic components were investigated. The point at which the influence of forced convection cooling overrides the radiation losses was determined. It was assumed that the heat sink resides within a system environment and is used to cool a typical electronic component. The eval... View full abstract»

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  • Monitoring and analyzing the dynamic junction temperature distribution of RF power transistors by using RM-50 infrared micro imager

    Publication Year: 1988 , Page(s): 84 - 87
    Cited by:  Papers (2)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (236 KB)  

    The authors describe experiments carried out on three types of RF power transistors typically used in the power amplifiers of communication systems. Because of differences found when measuring junction temperatures, a dynamic heat resistance concept was formulated to describe the dynamic thermal characteristics of RF power transistors. Using this concept, the handling capability, burn-in testing, ... View full abstract»

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  • Thermal characterization of a 149-lead VLSI package with heat sink

    Publication Year: 1988 , Page(s): 62 - 65
    Cited by:  Papers (2)
    Request Permissions | Click to expandAbstract | PDF file iconPDF (400 KB)  

    High-power emitter-coupled logic (ECL) circuits in large pin-grid array (PGA) packages must be optimized for thermal dissipation in order to operate reliably in computer applications. The steady-state and dynamic thermal characteristics of a 149-lead hermetic PGA package are studied, with emphasis on three different configurations of a finned heat sink and on two types of fillers for the epoxy hea... View full abstract»

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