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Advanced Semiconductor Manufacturing Conference and Workshop, 1992. ASMC 92 Proceedings. IEEE/SEMI 1992

Date Sept. 30 1992-Oct. 1 1992

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  • IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop. ASMC '92 Proceedings (Cat. No.92CH3182-3)

    Publication Year: 1992
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    Freely Available from IEEE
  • Sequential screening in semiconductor manufacturing: exploiting lot-to-lot variability and spatial dependence

    Publication Year: 1992
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (56 KB)

    Summary form only given. Screening at the wafer level to exploit lot-to-lot variability is considered. The yield is modeled using an empirical Bayes framework: the number of bad chips on each wafer in a given lot is a gamma random variable, and the scale parameter is unknown and varies from lot to lot according to another gamma distribution. The resulting problem is an optimal stopping problem emb... View full abstract»

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  • Wafer fab production controls for the 90s

    Publication Year: 1992, Page(s):36 - 38
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (140 KB)

    The introduction and implementation of production control systems in wafer fabrication operations are discussed. The introduction of production planning systems and the results from the implementation of control systems placed on work-in-process inventory, equipment status, batch queuing/set-up, and statistical processing are considered View full abstract»

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  • Progress toward host tool integration of in situ particle monitors

    Publication Year: 1992, Page(s):16 - 17
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (196 KB)

    The authors point out that in situ particle monitoring has gained substantial acceptance as a manufacturing process control technique, with the capability of providing automated 100% inspection during process. This is significant for several reasons, including faster detection of out of control events and higher baseline count rates as a consequence of the ability to monitor continuously, the dete... View full abstract»

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  • In-line automated inspection for semiconductor assembly

    Publication Year: 1992, Page(s):127 - 134
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (668 KB)

    Several in-line automated inspection techniques for semiconductor assembly are discussed. First, the characteristics of in-line automated inspection are described. Then, a machine vision system that is being developed for TAB tape inspection is presented. Machine vision techniques for two-dimensional and three-dimensional flaw inspection are proposed. A laser/infrared technique, scanning laser aco... View full abstract»

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  • A large-scale SPC implementation using the IBM multimedia SPC program

    Publication Year: 1992, Page(s):153 - 158
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (424 KB)

    The implementation of statistical process control (SPC) in the chemical vapor deposition (CVD) process area of a semiconductor wafer fabricator is described. Advanced self-study interactive video/computer training and a series of cross-functional meetings were used for problem solving. The training that production employees received enabled them to enhance their basic statistical knowledge and ski... View full abstract»

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  • An automated system for loading Atmoscan process tubes using intrabay material handling technologies

    Publication Year: 1992
    Cited by:  Papers (1)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (44 KB)

    Summary form only given. The authors point out that a tracked robot (intrabay) system that uses adaptive hardware to reliably load conventional shovel-type cantilevers as well as the Atmoscan-type has been implemented into production. In addition, a networked VAX software package has been deployed that controls and gathers data from the furnace controller via its SECS-II interface, making the oper... View full abstract»

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  • Test equipment correlation: a statistical approach

    Publication Year: 1992, Page(s):121 - 126
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (320 KB)

    A technique to effectively control equipment bias is discussed. The method relies on the control of the amount residuals and its deviation. It is generic and can be easily extended to various types of testers and/or any other measurement system which is continuously being used in production environment, thus making any R&R studies very infrequent, if at all possible View full abstract»

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  • Managing technology transfer: a matrix approach

    Publication Year: 1992, Page(s):186 - 188
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (248 KB)

    The use of a multilevel matrix management approach to maximize the transfer of knowledge from the SEMATECH manufacturing research consortium to Harris Semiconductor is described. The technology transfer manager works through site coordinators to ensure transfer of technology in all areas, and on all levels. Harris management interacts with SEMATECH management to provide direction on major programs... View full abstract»

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  • The economic benefits of new stepper technology for manufacturing with 0.35 μm IC design rules

    Publication Year: 1992, Page(s):7 - 15
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (576 KB)

    An analysis is made of the economic benefits of stepper technology for manufacturing ICs with 0.35-μm design rules. A table of design rules required for manufacturing 0.35-μm ICs is proposed. With reference to these design rules, three critical budgets, CD control, overlay, and particulate control, are analyzed with respect to cost per critical layer and impact on cumulative yield using the ... View full abstract»

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  • Advanced CIM environment for manufacturing data analysis

    Publication Year: 1992, Page(s):19 - 24
    Cited by:  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (500 KB)

    An environment for performing complex analyses of semiconductor manufacturing processes and IC products is described. This innovative analysis toolset has increased the productivity of product engineering, process engineering and design organizations by providing a method for complex manufacturing data reduction without the need for exhaustive training. The interactive, forms-based interface utili... View full abstract»

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  • Productivity improvement in semiconductor fabrication environment using automode 2E+simulation software

    Publication Year: 1992, Page(s):84 - 89
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (480 KB)

    The development and validation of a wafer fabrication simulation model on Mac II Ci based Automode IIe and the use of this model to improve Fab-2 productivity is discussed. The productivity improvement is achieved by reducing cycle times and work-in-process inventory while increasing factory capacity by optimum utilization of available resources. This study is limited to a 4-in Fab-2 wafer fabrica... View full abstract»

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  • Self-learning fuzzy modeling of semiconductor processing equipment

    Publication Year: 1992, Page(s):100 - 106
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (468 KB)

    A qualitative equipment model for a low pressure chemical vapor deposition (LPCVD) process is presented. The model is based on fuzzy representation of input-output relationships and utilizes self-tuning membership functions. To demonstrate this concept a fuzzy inference system has been built for polysilicon grain size prediction based on deposition and annealing temperatures. After the system is t... View full abstract»

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  • Profile control in isotropic plasma etching

    Publication Year: 1992, Page(s):116 - 119
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (320 KB)

    The possibility of controlling the lateral-to-vertical etch ratio of undoped dielectric material is tested. The Lam Research Rainbow 4500i, configured with a downstream isotropic plasma etch chamber, was used for the study. The tetra-ethyl-ortho-silicate (TEOS) isotropic etch profile was examined as a function of process parameters in order to establish trends of isotropic etch profile. A fraction... View full abstract»

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  • Process flow system for VLSI research and development

    Publication Year: 1992, Page(s):55 - 59
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (376 KB)

    A process flow system consisting of an intelligent process flow design system, a lot scheduling system and a lot tracking system is discussed. The system has been implemented in a VLSI research and development facility. It is shown that the system substantially increases the design efficiency of various complex process flows and the fabrication efficiency of a wide variety of VLSIs under those pro... View full abstract»

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  • ALT: a dynamic, flexible approach to configurations, maturity, and access control for manufacturing systems

    Publication Year: 1992, Page(s):25 - 29
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (536 KB)

    The ALT system, which was developed to provide a highly dynamic configuration management system for use with object-oriented database technology, is discussed. In ALT, most aspects of design management are invisible to the design engineers. By utilizing basic data dependencies in common object-oriented data structures, ALT manages a set of simple rules which assure data integrity. It extends the c... View full abstract»

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  • Plasma-etching induced damage in thin oxide

    Publication Year: 1992, Page(s):79 - 83
    Cited by:  Papers (4)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (324 KB)

    It is pointed out that plasma Al etching and resist ashing processes cause Fowler-Nordheim current to flow through the oxide and that plasma-induced damage can be simulated and modeled as damage produced by constant current electrical stress. The current produced by the plasma process increases with the antenna size of the device structure. C-V measurement is a more sensitive tec... View full abstract»

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  • Application of real-time expert systems in semiconductor manufacturing

    Publication Year: 1992, Page(s):90 - 95
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (508 KB)

    Some requirements of a real-time expert system and applications in process control, statistical process control, and scheduling are presented. Combining the expert system capability with object oriented modeling, one can build powerful applications in a relatively short time span, thus cutting down the time taken to implement a process control system. Also, when implemented, an expert-system-based... View full abstract»

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  • MOS device technology trend and future direction

    Publication Year: 1992
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (36 KB)

    Summary form only given. It is pointed out that IC speed improvements slowed down after achieving 1-μm geometry and will be very slight after 0.5 μm. Scaling down the IC circuit in the depth direction is reaching the limit of existing technology. The real estate for isolation of CMOS SRAM structures occupies more than 80% of the total chip area and the possibility of any great improvement is... View full abstract»

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  • Case-based hypermedia access of `lessons learned' to accomplish technology transfer

    Publication Year: 1992, Page(s):194 - 198
    Cited by:  Patents (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (464 KB)

    The authors point out that the transfer of semiconductor process technology to daughter fabrication facilities is difficult due to multiple, decentralized, offline sources of expertise and documentation. the goal of the Knowledge Access project at Texas Instruments was to supply technologies to integrate and disseminate the wealth of process knowledge and lessons learned to multiple wafer fabricat... View full abstract»

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  • CHARM2: towards an industry-standard wafer surface-charge monitor

    Publication Year: 1992, Page(s):148 - 152
    Cited by:  Papers (3)  |  Patents (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (464 KB)

    The rationale and the content of the CHARM2 test chip, and an experimental program using it to develop an industry-standard wafer surface charging monitor, are discussed. The EEPROM-based monitors are based on the observation that most of the charging damage to IC structures associated with ion- and plasma-based processes is due to the transport and trapping of charges in the oxides of IC device s... View full abstract»

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  • Rapid thermal processing for reproducible formation of the self-aligned silicides of cobalt and platinum

    Publication Year: 1992, Page(s):211 - 215
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (336 KB)

    The results of a continued investigation of the formation of self-aligned CoSi2 and PtSi are presented. In both cases it is found that simple surface cleaning methods and use of rapid thermal annealing in inert ambients lead to a method of forming these silicides that is reproducible and reliable. The effect of dopants in silicon or polysilicon on such process has also been investigated... View full abstract»

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  • Examining process induced contamination: plasma etching and chemical vapor deposition reactors coupled to an in situ surface analytical capability

    Publication Year: 1992, Page(s):111 - 115
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (500 KB)

    A comprehensive approach developed for the systematic examination of process induced contamination and reaction mechanisms seen during electronics processing is discussed. The approach is based on a tool which models a cluster tool environment, incorporating both plasma and thermal processing, and coupling them in vacuo to a surface analytical instrument. This tool has been used to examine a numbe... View full abstract»

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  • Resource sharing in capacity analysis

    Publication Year: 1992, Page(s):39 - 42
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (240 KB)

    The problem of use of multiple resources by multiple task types in an environment where the resource-task assignments are constrained at various degrees of flexibility is investigated. The authors study this in the context of a partially flexible manufacturing flow shop and propose algorithms for predicting machine utilization by machine group (i.e., use of resources by job type). A general predic... View full abstract»

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  • Optimized metalization processing for improved manufacturability

    Publication Year: 1992, Page(s):72 - 74
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (164 KB)

    Improvements brought about in 1.0-μm and 1.5-μm production CMOS processes through modifications in the metalization process are discussed. The standard metalization process consists of dry via etching with a bottom Ti-W thickness of 2200 Å deposited in the same pump-down as the Al film (no air exposure of bottom Ti-W). In the modified process, via etching is wet/dry and the bottom Ti-W... View full abstract»

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