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Advanced Semiconductor Manufacturing Conference and Workshop, 1992. ASMC 92 Proceedings. IEEE/SEMI 1992

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Advanced Semiconductor Manufacturing Conference and Workshop, 1992. ASMC 92 Proceedings. IEEE/SEMI 1992

Date Sept. 30 1992-Oct. 1 1992

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Title History

IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop. ASMC '92 Proceedings (Cat. No.92CH3182-3)

Profile control in isotropic plasma etching

Using a statistical experimental design to optimize a phosphorus deposition process in a high volume production facility

A large-scale SPC implementation using the IBM multimedia SPC program

Resource sharing in capacity analysis

An analytical approach to improving equipment productivity

Technology outreach

The challenge for American manufacturing

Process flow system for VLSI research and development

MOS device technology trend and future direction

Rapid thermal processing for reproducible formation of the self-aligned silicides of cobalt and platinum

The economic benefits of new stepper technology for manufacturing with 0.35 μm IC design rules

Simultaneous in-situ measurement of film thickness and temperature by using multiple wavelength pyrometric interferometry (MWPI)

Case-based hypermedia access of `lessons learned' to accomplish technology transfer

Examining process induced contamination: plasma etching and chemical vapor deposition reactors coupled to an in situ surface analytical capability

Yield and productivity management

Key technologies for future IC manufacturing: a view from Europe

A novel design for the construction and startup of an eight inch pilot line

Plasma-etching induced damage in thin oxide

CHARM2: towards an industry-standard wafer surface-charge monitor

Sequential screening in semiconductor manufacturing: exploiting lot-to-lot variability and spatial dependence

Product defect reduction through the use of business process management

True employee empowerment vs. one more job we have to do

Optimized metalization processing for improved manufacturability

Optimization of LPCVD silicon nitride process in a vertical thermal reactor: use of design of experiments

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