By Topic

Semiconductor Conference (CAS), 2013 International

Date 14-16 Oct. 2013

Go

Filter Results

Displaying Results 1 - 25 of 59
  • Front and back cover

    Publication Year: 2013 , Page(s): c1 - c4
    Save to Project icon | Request Permissions | PDF file iconPDF (278 KB)  
    Freely Available from IEEE
  • Title page

    Publication Year: 2013 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (530 KB)  
    Freely Available from IEEE
  • Copyright page

    Publication Year: 2013 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (486 KB)  
    Freely Available from IEEE
  • Sponsor page

    Publication Year: 2013 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (554 KB)  
    Freely Available from IEEE
  • Blank page

    Publication Year: 2013 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (395 KB)  
    Freely Available from IEEE
  • Foreword

    Publication Year: 2013 , Page(s): v
    Save to Project icon | Request Permissions | PDF file iconPDF (501 KB) |  | HTML iconHTML  
    Freely Available from IEEE
  • Blank page

    Publication Year: 2013 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (395 KB)  
    Freely Available from IEEE
  • Organizing committee

    Publication Year: 2013 , Page(s): vii - viii
    Save to Project icon | Request Permissions | PDF file iconPDF (460 KB)  
    Freely Available from IEEE
  • Contents

    Publication Year: 2013 , Page(s): ix - xv
    Save to Project icon | Request Permissions | PDF file iconPDF (578 KB)  
    Freely Available from IEEE
  • Blank page

    Publication Year: 2013 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (395 KB)  
    Freely Available from IEEE
  • Author index

    Publication Year: 2013 , Page(s): xvii - xviii
    Save to Project icon | Request Permissions | PDF file iconPDF (454 KB)  
    Freely Available from IEEE
  • Session D: Semiconductor devices

    Publication Year: 2013 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (441 KB)  
    Freely Available from IEEE
  • Blank page

    Publication Year: 2013 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (395 KB)  
    Freely Available from IEEE
  • On the variation of the 2DEG charge density with the density of the surface donor traps in AiGaN/GaN transistors

    Publication Year: 2013 , Page(s): 155 - 158
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (941 KB) |  | HTML iconHTML  

    Gallium nitride (GaN) has a bright future in high voltage device owing to its remarkable physical properties and the possibility of growing heterostructures on silicon substrates. GaN High Electron Mobility Transistors (HEMTs) are expected to make a strong impact in off line applications and LED drives. However, unlike in silicon-based power devices, the on-state resistance of HEMT devices is huge... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • New Beta-Matrix topology in CMOS32nm and beyond for ESD/LU improvement

    Publication Year: 2013 , Page(s): 159 - 162
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1159 KB) |  | HTML iconHTML  

    This paper is focused on the optimization of Beta-Matrix power device to protect thin oxide GO1 =1 V and thick oxide G02=1.8V. The study investigates Beta-Matrix topology and particularly the impact of elementary pattern on device behavior. This work is mainly carried on 3D TCAD simulations. The best configurations, with lower voltage triggering have been realized in CMOS32nm high k metal gate and... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • 4H-SiC Schottky contact improvement for temperature sensor applications

    Publication Year: 2013 , Page(s): 163 - 166
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (947 KB) |  | HTML iconHTML  

    An improvement in performance of 4H-SiC Schottky diodes using a Ni metal is proposed. The effects of the Schottky and ohmic contacts' annealing process conditions are investigated through electrical characterization of the diodes. A thermal treatment at 800°C leads to devices with stable and reproducible electrical behavior. A high performance temperature sensor based on these 4H-SiC Schott... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • ESD protection with BIMOS transistor for bulk & FDSOI advanced CMOS technology

    Publication Year: 2013 , Page(s): 171 - 174
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1266 KB) |  | HTML iconHTML  

    The purpose of this paper is to introduce the ESD protection using BIMOS transistor in bulk CMOS and in hybrid area for 28nm FDSOI High k metal gate. Moreover the DC behavior is also performed. Thus, this study introduces an ESD protection with a minimum of silicon area consumption and efficient to protect the MOS transistors with thin & thick oxide and also in thin silicon film. TCAD simulati... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Session IC1: Integrated circuits 1

    Publication Year: 2013 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (426 KB)  
    Freely Available from IEEE
  • Blank page

    Publication Year: 2013 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (395 KB)  
    Freely Available from IEEE
  • RF power potential of High-k metal gate 28 nm CMOS technology

    Publication Year: 2013 , Page(s): 181 - 184
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (636 KB) |  | HTML iconHTML  

    This paper reports on the first RF microwave power characterization of High-k metal gate 28 nm CMOS devices. Measurement was performed on Load-pull configuration using a Nonlinear Vector Network Analyzer (NVNA) associated with a passive tuner at the fundamental frequency of 10 GHz. Behavior of these High-k metal gate 28 nm CMOS was analyzed on large signal conditions in class A operation. The maxi... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Soft-start low voltage CMOS LDO

    Publication Year: 2013 , Page(s): 185 - 188
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (813 KB) |  | HTML iconHTML  

    The paper presents a soft-start low voltage CMOS LDO. A double-reference bandgap was developed to provide the soft-start feature. The first reference is quicker and drives the start-up circuit, while the second is slower and, after being divided, drives the LDO core. This circuit technique allows the reduction of the supply voltage and the control of the output voltage rise time through an externa... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Comparative study of two LDOs for supplying a 2.5GHz rail-to-rail VCO

    Publication Year: 2013 , Page(s): 189 - 193
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (1444 KB) |  | HTML iconHTML  

    This paper presents a comparative study of two low dropout voltage regulators (LDO) for supplying a 2.5GHz rail-to-rail voltage controlled oscillator (VCO). The effect of the two LDOs noise on the phase noise of the VCO is presented while keeping the supply ripple the same. Both LDO structures are implemented by using the same error amplifier and the same pass transistor, but the classical LDO use... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Determining the optimal number of gain stages of variable gain amplifiers used in multi-standard homodyne wireless receivers

    Publication Year: 2013 , Page(s): 193 - 196
    Save to Project icon | Request Permissions | Click to expandAbstract | PDF file iconPDF (647 KB) |  | HTML iconHTML  

    This paper presents an analysis on determining the optimal number of gain stages of Variable Gain Amplifiers (VGAs) used in direct conversion CMOS multi-standard wireless receivers embedding analog baseband signal conditioning. In order to facilitate design porting, modern re-configurable wireless receivers are based on a modular architecture for the low frequency part of their analog signal condi... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Session IC2: Integrated circuits 2

    Publication Year: 2013 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (441 KB)  
    Freely Available from IEEE
  • Blank page

    Publication Year: 2013 , Page(s): 1
    Save to Project icon | Request Permissions | PDF file iconPDF (395 KB)  
    Freely Available from IEEE