Scheduled System Maintenance
On Friday, October 20, IEEE Xplore will be unavailable from 9:00 PM-midnight ET. We apologize for the inconvenience.

# 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

## Filter Results

Displaying Results 1 - 25 of 116
• ### [Front cover]

Publication Year: 2013, Page(s): 1
| PDF (23664 KB)
• ### [Title page]

Publication Year: 2013, Page(s): 1
| PDF (341 KB)

Publication Year: 2013, Page(s): ii
| PDF (42 KB)
• ### Foreword

Publication Year: 2013, Page(s): iii
| PDF (60 KB) | HTML
• ### Committees

Publication Year: 2013, Page(s):iv - v
| PDF (48 KB)
• ### Plenary speakers

Publication Year: 2013, Page(s): vi
| PDF (47 KB)
• ### Programme

Publication Year: 2013, Page(s): 1
| PDF (53 KB)

Publication Year: 2013, Page(s):viii - xxiv
| PDF (151 KB)
• ### A detailed evaluation of model defects as candidates for the bias temperature instability

Publication Year: 2013, Page(s):1 - 4
Cited by:  Papers (4)
| | PDF (765 KB) | HTML

Despite its long research history, the bias temperature instability (BTI) is still not fully understood. Recent advances on both the experimental and theoretical side have deepened our understanding of the phenomenon, but the microscopic origin is still unknown. We report on a detailed evaluation of atomistic models of the oxygen vacancy and the hydrogen bridge defects in SiO2 as candid... View full abstract»

• ### 3D TCAD statistical analysis of transient charging in BTI degradation of nanoscale MOSFETs

Publication Year: 2013, Page(s):5 - 8
Cited by:  Papers (4)
| | PDF (1933 KB) | HTML

We present a comprehensive 3D statistical simulation analysis of transient charging during BTI degradation in nanoscale MOSFETs. We study the impact of several variability sources affecting the trap capture time constants. Our simulation results identify the activation energy involved in the multi-phonon capture process as major parameter responsible for BTI time constants variability. Our finding... View full abstract»

• ### A new kinetic lattice Monte Carlo modeling framework for the source-drain selective epitaxial growth process

Publication Year: 2013, Page(s):9 - 12
Cited by:  Papers (2)
| | PDF (1378 KB) | HTML

We have developed a new kinetic lattice Monte Carlo modeling framework for Si/Ge selective epitaxial growth based on neighbor binding interactions within the third-nearest-neighbor range of the diamond lattice. We find that first- and second-nearest-neighbor interactions contribute significantly to the faceting between {100} and {111}, while the third-nearest-neighbor interaction is the cause of {... View full abstract»

• ### A numerical model using the phase field method for stress induced voiding in a metal line during thermal bake

Publication Year: 2013, Page(s):13 - 16
Cited by:  Papers (4)
| | PDF (1353 KB) | HTML

We present a numerical model using the phase-field method (PFM) for stress-induced-voiding (SIV) in a metal line. The model was verified by comparison with the typical stress-migration (SM) analytical model. We investigated the effects of flaw location and density on time-to-failure (TTF). The model was applied to the failure analysis of the BEOL process of a 0.13um device for automobiles. View full abstract»

• ### Direct tunneling and gate current fluctuations

Publication Year: 2013, Page(s):17 - 20
Cited by:  Papers (3)
| | PDF (1710 KB) | HTML

A comprehensive study of correlated gate leakage and drain current fluctuations in nMOS devices using non-equilibrium Green's function calculations has been carried out. A simulation model combining 3D self-consistent electrostatic potentials accounting for random discrete dopants and charged oxide traps with a 1D and 2D transport description of direct-tunneling gate leakage has been developed. Th... View full abstract»

• ### Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices

Publication Year: 2013, Page(s):21 - 24
| | PDF (1121 KB) | HTML

This work investigates the performance of the statistical impedance field method in the analysis of the amplitude of random telegraph noise fluctuations in nanoscale MOS devices. Considering different channel doping profiles, we show that this method offers a practical compromise between accuracy and computational loads, allowing a good assessment of the RTN amplitude statistics while resulting in... View full abstract»

• ### Quantum insights in gate oxide charge-trapping dynamics in nanoscale MOSFETs

Publication Year: 2013, Page(s):25 - 28
Cited by:  Papers (3)
| | PDF (5341 KB) | HTML

Charge trapping in the gate oxide of nanoscale MOSFETs featuring an atomistic' channel doping profile has been revealed as a key concept to explain the RTN and BTI phenomena strongly affecting contemporary technology transistors performance. By means of a 2D Wigner function approach, in this paper we investigate the trapping of a single electron in the gate oxide of a 25nm transistor including th... View full abstract»

• ### A physics-based statistical model for reliability of STT-MRAM considering oxide variability

Publication Year: 2013, Page(s):29 - 32
Cited by:  Papers (2)
| | PDF (830 KB) | HTML

A physics-based statistical model considering oxide thickness (Tox) variability is proposed for evaluating the impact of time-dependent dielectric breakdown (TDDB) on the performance of spin-transfer torque magneto-resistive random access memory (STT-MRAM). The statistics of breakdown events are captured by the percolation theory, physics-based analytical model for successive break down... View full abstract»

• ### Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach

Publication Year: 2013, Page(s):33 - 36
| | PDF (667 KB) | HTML

Defect evolution and dopant dynamics in boron implanted silicon under excimer laser irradiation is investigated by means of continuous model and kinetic Monte Carlo (KMC) simulations. Both approaches rule the post-implant kinetics of the defects-dopant system in the extremely far from-the equilibrium conditions caused by the laser irradiation. The thermal problem has been solved within the phase-f... View full abstract»

• ### Donor deactivation at high doping limit: Donor pair and impurity band model

Publication Year: 2013, Page(s):37 - 40
| | PDF (1398 KB) | HTML

We present a donor deactivation model at high doping limit. The limitation of the existing activation model is discussed and a solution is proposed. In the new model, the impurity band model is combined with ab-initio based lattice Monte Carlo (LMC) simulation to explain the saturation behavior of active donor concentration experimentally observed. The developed impurity band model can reproduce t... View full abstract»

• ### Atomistic study of sulfur diffusion and S2 formation in silicon during low-temperature rapid thermal annealing

Publication Year: 2013, Page(s):41 - 44
| | PDF (1443 KB) | HTML

Theoretical analyses predict that large Schottky barrier reduction by sulfur doping at NiSi/Si junction is induced by S2 formation. The S2 formation may have occurred in silicidation process, even under low temperature rapid thermal annealing. We have demonstrated that implanted sulfur into silicon forms S2 configuration under low temperature rapid thermal annealing, based on first principles calc... View full abstract»

• ### Epitaxial Volmer-Weber growth modelling

Publication Year: 2013, Page(s):45 - 48
| | PDF (2573 KB) | HTML

As-deposited epitaxial thin III-nitride films grown on silicon substrates by vapor deposition often exhibit large intrinsic stress that can lead to film failure. The stress created in a III-nitride film is strictly related to its crystal structure evolution during its epitaxial Volmer-Weber growth on the Si substrate. Sensitive real-time measurements of stress evolution during the deposition show ... View full abstract»

• ### Compact modeling for the changing transistor

Publication Year: 2013, Page(s):49 - 52
| | PDF (2047 KB) | HTML

Compact model is not only a tool for IC design but also the unique bridge between IC manufacturing and design. It needs not only a mathematical model of a prototype transistor but also accurate models of many real device effects of the modern transistor. Compact model can address not only circuit performance but also reliability. BSIM and BERT are used as examples. View full abstract»

• ### Recent enhancements in BSIM6 bulk MOSFET model

Publication Year: 2013, Page(s):53 - 56
Cited by:  Papers (12)
| | PDF (950 KB) | HTML

In this paper, we discuss the recent enhancements made in the BSIM6 bulk MOSFET model. BSIM6 is the latest compact model of bulk MOSFET from BSIM group which have body referenced charge based core. Junction capacitance model is improved over BSIM4 and is infinitely continuous around Vbs=Vbd=0V. Symmetry of the model is successfully validated by performing Gummel Symmetry Test... View full abstract»

• ### An accurate compact modelling approach for statistical ageing and reliability

Publication Year: 2013, Page(s):57 - 60
Cited by:  Papers (2)
| | PDF (925 KB) | HTML

In this paper, we demonstrate a compact modelling approach that allows statistical circuit simulation at arbitrary stages of transistor BTI ageing, using advanced compact model generation techniques implemented in the GSS statistical circuit simulation engine RandomSpice. The methodology links statistical TCAD simulations where different frozen in time' stages of BTI degradation are described in ... View full abstract»

• ### Compact modeling for application-specific high-sigma worst case

Publication Year: 2013, Page(s):61 - 64
Cited by:  Papers (2)
| | PDF (780 KB) | HTML

A high-sigma corner model derived from Monte Carlo simulation with a novel sampling algorithm is presented. Compared with the traditional Monte Carlo simulation approach, the simulation effort and computational resource is greatly reduced. This methodology can be applied to create application-specific corner model for different design spec leading to more competitive designs. View full abstract»

• ### Stress estimation in open tungsten TSV

Publication Year: 2013, Page(s):1 - 4
| | PDF (1106 KB) | HTML

We have studied the residual stress formation in the metal film of a Through Silicon Via (TSV) technology. The film is deposited by a CVD process in the TSV's wall and a residual stress arises due to this process. Our goal was to develop a methodology to estimate the stress based on growth parameters. The calculation results exhibit a good agreement with experiments, although there is a tendency f... View full abstract»