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Radiation Effects Data Workshop, 1999

Date 12-16 July 1999

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  • 1999 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.99TH8463)

    Publication Year: 1999
    Save to Project icon | Request Permissions | PDF file iconPDF (165 KB)  
    Freely Available from IEEE
  • Author index

    Publication Year: 1999 , Page(s): 135
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    Freely Available from IEEE
  • SDRAM space radiation effects measurements and analysis

    Publication Year: 1999 , Page(s): 15 - 23
    Cited by:  Papers (7)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (620 KB)  

    In recent years, memory technology has been advancing quickly. This paper presents the comprehensive radiation effects examination of two high density (64 Mb and 128 Mb) 0.35 μm CMOS Synchronous Dynamic Random Access Memories (SDRAMs). This study uses the major components of the natural near earth environment to determine the applicability of these parts to space missions. Protons have been used to measure the single event effect (SEE) and total dose sensitivity of these devices. Heavy ions were used to measure the SEE, including single event latch-up (SEL), sensitivity of these devices. Comparisons are made between results from semi-empirical modeling and results from data View full abstract»

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  • Single-event upset test results for the Xilinx XQ1701L PROM

    Publication Year: 1999 , Page(s): 35 - 40
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (424 KB)  

    A 3.3 V serial PROM, used to configure advanced Xilinx FPGAs, was tested for single event effects with heavy ions. Device latchup was observed with an LET threshold of 55 MeV per mg/cm2 and a saturated cross-section of 10-5 cm2. Three types of upsets were measured: (1) address errors, (2) premature end-of-program signals, and (3) functional interrupt View full abstract»

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  • Electron induced scintillation testing of commercially available optical fibers for space flight

    Publication Year: 1999 , Page(s): 113 - 116
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (336 KB)  

    A test to verify the performance of several commercial and military optical fibers available on the market today was conducted, via usage of an electron accelerator, to monitor radiation induced scintillation or luminescence. The test results showed that no significant effects could be detected with the PMT (Photomultiplier Tube) system used, above a noise floor of 50 photons/sec that were due to optical fiber scintillation. Although some data appeared to show events taking place, noise scan results have correlated these events to arcing inside the electron accelerator facility. This test was to simply characterize for space flight, which optical fiber candidates were the largest scintillators among the eighteen optical fiber candidates tested View full abstract»

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  • Single event upset characteristics of some digital integrated frequency synthesizers

    Publication Year: 1999 , Page(s): 46 - 52
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (256 KB)  

    Frequency generation circuits can be designed by using digital integrated circuit frequency synthesizers containing phase locked loops. Many circuits in ECL, Bi-CMOS and CMOS-SOS technology presently exist, making it easier to develop systems with frequencies up to 2.5 GHz and beyond. Single Event Upset (SEU) characteristics of digital frequency synthesizers from National Semiconductor (LMX2315), Peregrine (PE3282A) and Mitel (SP8855 and SP8858) are presented. Depending upon the device technology and manufacturing process, the upset rate can be significant that they may not be suitable for high reliability space applications View full abstract»

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  • A new proton irradiation facility at the Northeast Proton Therapy Center

    Publication Year: 1999 , Page(s): 123 - 127
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (344 KB)  

    The radiation environment resulting from cosmic rays both in space and on Earth must be well understood to protect both people and equipment. There is a need for irradiation facilities with well characterized proton beams where equipment design can be tested and the underlying physics studied. The Harvard Cyclotron Laboratory (HCL) has delivered proton beams up to 160 MeV to `outside users' for over 30 years. The Northeast Proton Therapy Center (NPTC) will continue the work of HCL providing facilities for outside users. NPTC will provide continuous proton beams up to 230 MeV with currents as high as 300 nA (3). The advantages of NPTC include, higher proton beam energy, continuous beam capability and fast energy adjustment View full abstract»

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  • A high performance Rad hard 2-3 GHz integer N CMOS phase lock loop

    Publication Year: 1999 , Page(s): 41 - 45
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (324 KB)  

    We report here on the performance of a 2-3 GHz Phase Lock Loop (PLL) designed specifically for commercial space applications requiring low power dissipation, very good phase noise, good temperature stability, excellent SEE tolerance, and little degradation over a 100 kRad(Si) total dose exposure. The device is built in a 0.5 μm fully depleted ultra thin silicon on sapphire technology (UTSi). Product level radiation data is presented showing performance as a function of total dose. Following gamma exposures to 100 kRad(Si), the device shows an integrated phase noise of less than 0.8 degree for 2.18 GHz operation for frequency step sizes of 1 MHz. This is a performance level exceeding all known integrated PLL's currently in the commercial marketplace View full abstract»

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  • The effects of space radiation and burn-in on plastic encapsulated semiconductors

    Publication Year: 1999 , Page(s): 96 - 101
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (344 KB)  

    Burn-in, gamma irradiation (Cobalt 60) total dose effects (at dose rates of 0.002, 0.05 and 50 rad/s) and proton irradiation (at energies of 1 and 10 MeV) on bipolar and MOSFET transistors in plastic and ceramic packages are assessed. Practical considerations prevented the 0.002 rad/s irradiation being taken to the same total dose as the 0.05 and 50 rad/s irradiations, but that achieved was sufficient to enable comparisons to be made. The Cobalt 60 low dose rate effect was observed in all of the ceramic packaged devices, with and without burn-in. The plastic packaged devices displayed a reduced Cobalt 60 dose rate sensitivity and burn-in was found to reduce dose rate related effects for plastic packaged devices. The 1 MeV proton irradiation did not demonstrate any degradation whereas the 10 MeV irradiation showed significant degradation for the ceramic packaged devices compared with little, if any, degradation for the plastic packaged devices. Burn-in did not affect the susceptibility to proton irradiation induced degradation View full abstract»

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  • Total ionizing dose effects in a SRAM-based FPGA

    Publication Year: 1999 , Page(s): 24 - 29
    Cited by:  Papers (3)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (424 KB)  

    We have measured the effects of total ionizing dose on Xilinx XC4036X FPGAs. The FPGAs were irradiated at a dose rate of about, 0.5 krad/hr. An average total dose of 39 krad(Si) and 16 krad(Si) were absorbed by the XL-series and XLA-series FPGAs, respectively, before the power supply current increased View full abstract»

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  • Recent radiation damage and single event effect results for microelectronics

    Publication Year: 1999 , Page(s): 1 - 14
    Cited by:  Papers (13)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (940 KB)  

    We present heavy ion and proton single event effects (SEE) as well as radiation damage ground test results for candidate spacecraft electronics. Microelectronics tested include digital, analog, and hybrid devices View full abstract»

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  • Radiation evaluation of plastic encapsulated transistors and microcircuits for use in space applications

    Publication Year: 1999 , Page(s): 102 - 107
    Cited by:  Papers (4)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (308 KB)  

    Radiation test results demonstrate the viability of selected PEMs devices for space use. The majority of the devices selected for evaluation are commercial equivalents of devices currently used on a number of satellites. Materials evaluations and charging experiments were also performed View full abstract»

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  • Radiation effects in a fixed-point digital signal processor

    Publication Year: 1999 , Page(s): 30 - 34
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (364 KB)  

    Radiation effects in a fixed-point digital signal processor (DSP) from Texas Instruments were studied. Single event upset, single event snapback and total ionizing dose effects were observed and some comparisons to other studies of floating-point DSPs are made View full abstract»

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  • Components testing for HESSI satellite APECTS module

    Publication Year: 1999 , Page(s): 92 - 95
    Cited by:  Papers (2)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (240 KB)  

    Electronic boards for the High Energy Solar Spectroscopic Imager HESSI satellite contain almost exclusively COTS devices. Mission oriented components' qualification for total dose radiation hardness and single event phenomena were performed using proton beams. Results are reported for variety of low power parts including CCD, DSP and ADCs View full abstract»

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  • The irradiation facilities for the radiation tolerance testing of semiconductor devices for space use in Japan

    Publication Year: 1999 , Page(s): 117 - 122
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (380 KB)  

    Irradiation facilities for the radiation tolerance testing of semiconductor devices for space use in Japan are described, which cover different radiation qualities, such as gamma-rays, electron beams and ion beams. Among them a stress is put on the facilities for the single-event phenomena (SEP) testing using ion beams with wide LET ranges as well as for the microscopic analysis of SEP using a microbeam of 1 μm diameter View full abstract»

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  • High energy electron testing of silicon and GaAs/Ge solar cells

    Publication Year: 1999 , Page(s): 108 - 112
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    Silicon and GaAs/Ge solar cells were tested with 20 MeV, 40 MeV, and 60 MeV electrons to determine the displacement damage effects. Silicon cell degradation is linear with Non-Ionizing Energy Loss (NIEL) as reported in the literature. GaAs/Ge degradation was found to scale linearly with NIEL for the maximum power and as the square root of the NIEL for the open circuit voltage (Voc). The short circuit current degradation was found to be independent of electron energy View full abstract»

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  • Total-dose tolerance of a chartered semiconductor 0.35-μm CMOS process

    Publication Year: 1999 , Page(s): 82 - 86
    Cited by:  Papers (6)  |  Patents (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (280 KB)  

    MOSFETs fabricated in the commercial Chartered Semiconductor 0.35-μm CMOS process were characterized with respect to the effects of total dose irradiation. Gate oxide threshold voltage shifts at 100 krad(Si) for both minimum geometry 0.70/0.35 NMOS and PMOS transistors biased for worst-case shifts were less than 20 mV. Off-state field leakage currents for isolated NMOS transistors were below 10 nA at 100 krad(Si), but became large at 300 krad(Si). The effect of a post-irradiation high temperature anneal was to lower these leakage currents to less than 100 pA. PMOS transistors exhibited less than 10 pA leakage for doses up to 300 krad(Si). Measurements on edgeless annular NMOS transistors showed no significant increase in leakage current with total dose, indicating that the increased leakage observed in standard NMOS transistors is the result of field leakage associated with inversion in the bird's beak region at the transistor/field oxide interface. C-V measurements on field-oxide capacitors over substrate biased for worst-case threshold voltage shifts showed the capacitors did not invert at 100 krad(Si) for 3.3 V operation. Measurements on ring-oscillators biased dynamically during irradiation showed no significant change in the gate delay or power up to 300 krad(Si) total dose, suggesting that for actual digital circuits applications, functionality and performance may be able to be maintained to doses substantially above 100 krad(Si) View full abstract»

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  • A radiation-hardened cold sparing input/output buffer manufactured on a commercial process line

    Publication Year: 1999 , Page(s): 87 - 91
    Cited by:  Papers (1)
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (228 KB)  

    The radiation hardness of a cold sparing buffer manufactured on a commercial process line is demonstrated. The buffer is shown to be resistant to total dose ionizing radiation and immune (>128 MeV-cm 2/mg) to effects from heavy ions such as single event upset (SEU) and single event latch-up (SEL) View full abstract»

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  • Device SEE susceptibility update: 1996-1998

    Publication Year: 1999 , Page(s): 60 - 81
    Cited by:  Papers (2)
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    This eighth Compendium continues the previous work of Nichols, et al., on single event effects (SEE) first published in 1985. Because the Compendium has grown so voluminous, this update only presents data not published in previous compendia View full abstract»

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  • Radiation testing results of COTS based space microcircuits

    Publication Year: 1999 , Page(s): 53 - 59
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (436 KB)  

    Single Event Effects and Total Ionizing dose data collected by SEi for Commercial off the Shelf (COTS) microcircuits are presented. The data was collected for evaluation of these devices for commercial space programs View full abstract»

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