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Reliability Science for Advanced Materials and Devices (RSAMD), 2013 IEEE Conference on

Date 24-25 Feb. 2013

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Displaying Results 1 - 5 of 5
  • A toolbox approach to reliably integrating MEMS gyroscopes into harsh acoustic and vibration environments

    Publication Year: 2013 , Page(s): 1 - 5
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (839 KB) |  | HTML iconHTML  

    MEMS technology has greatly reduced the size and cost of gyroscopes. However, these sensors are also potentially susceptible to vibrational and acoustic excitation from their ambient operating environment. This mechanical noise can couple into the sensor and disrupt its performance in these harsh environments. No single solution will mitigate this problem for every application. Rather, a toolbox of techniques exists that each offers some degree of improvement in a MEMS gyroscope's performance in various environments. There are primarily two families of mitigation techniques. The first family involves altering the design of the sensor. For some applications, performance can be enhanced by increasing the resonating frequency of the sensor. Another technique is to embed the drive axis resonator in a feedback loop that maintains a constant amplitude of proof mass motion along the drive axis. The other family consists of techniques to enhance the device and system packaging. These techniques include passive and active vibration isolation between the sensor and the environment, mechanical noise absorbing materials and acoustic metamaterials to reduce mechanical noise transmission to the sensor. No one technique works for every sensor or every application. But a toolbox approach allows the engineer to select one of more techniques to improve gyroscope performance for a particular application. View full abstract»

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  • Advanced X-ray diffraction metrology as a means of improving semiconductor device reliability

    Publication Year: 2013 , Page(s): 1 - 7
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1327 KB) |  | HTML iconHTML  

    Reliability in many industries is often given lower priority than device performance or yield. Established unit process metrology is often inadequate to diagnose the root cause of product failures in complex manufacturing processes and a novel approach is required for issue resolution. This paper correlates measurements of crystalline texture and phase made by a fully automated X-ray diffraction tool to the reliability of Cu interconnects and gate oxide and source/drain contacts with nickel silicide metallization. View full abstract»

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  • Electrical conduction effect on reliability of low-k dielectric in Cu interconnect

    Publication Year: 2013 , Page(s): 1 - 3
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (3228 KB) |  | HTML iconHTML  

    Copper and low-k dielectrics as interconnect materials for advanced microelectronic devices have reliability concerns due to their electrical and mechanical vulnerability. The leakage current of low-k dielectric was studied widely to understand the reliability property. Previous studies focused on intra level voltage bias and emphasized the effect and leakage conduction mechanism in the cap layer, but the role of low k dielectric was not clear [1]. Other low-k leakage study showed different conduction mechanism but not under practical interconnect environment [2]. The characteristic of carrier injection between metal and dielectric was not well addressed previously. Therefore, we study the leakage currents of intra and inter level low-k dielectric with different electron injection directions in practical IC environment, in order to have thorough understanding of the conduction effect on low-k dielectric reliability. View full abstract»

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  • Reliability challenges of FinFET and other multi-gate MOSFETs

    Publication Year: 2013 , Page(s): 1 - 4
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (320 KB) |  | HTML iconHTML  

    In this paper by showing the results of an analytical model for the different variations of Multi-Gate MOSFETs including the FinFET., All-Around Gate MOSFET., Double-Gate MOSFET., we present a complete and detailed investigation of all the performance aspects of these novel device structures. By having the values of all the performance metrics of the transistors such as drain current., subthreshold swing., threshold voltage., and gate capacitance., we present detailed discussions on the several advantages of all the Multi-Gate structures including the FinFET. View full abstract»

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  • The effect of etch residuals on via reliability

    Publication Year: 2013 , Page(s): 1 - 5
    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (405 KB) |  | HTML iconHTML  

    Vias are formed in interconnect structures using a polymerizing chemistry in order to avoid etching the underlying metal wires. However, a drawback of the polymerizing chemistry is that etch residues can remain in the via opening, resulting in high via resistance and possible degradation of circuit performance. Although it is well known that etch residues in vias can cause yield loss, the effect on reliability has not been reported for submicron vias. In this paper, the effect of etch residues on via reliability is studied. Vias with etch residues showed no degradation in reliability after a thermal cycle stress, high temperature storage, or humidity stress. However, vias with etch residues fail at a lower current during a wafer level voltage ramp electromigration stress, compared to residue-free vias, suggesting that etch residues will reduce the electromigration lifetime of interconnect structures. View full abstract»

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