By Topic

# 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

## Filter Results

Displaying Results 1 - 25 of 256
• ### 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

Publication Year: 1998
| PDF (879 KB)
• ### IC manufacturing options to break the cost/performance bottleneck

Publication Year: 1998
| | PDF (36 KB)

Summary form only given, as follows. With the IC industry projected to grow to $273 billion by the year 2000 and worldwide electronic production to$1 trillion in the same period, the author discusses the macroeconomics and demographic trends that will sustain this growth. Applications, opportunity drivers and production are all discussed, by region. The Semiconductor Industry Association's Nation... View full abstract»

• ### Metal-polymer interfaces

Publication Year: 1998
Cited by:  Papers (1)
| | PDF (49 KB)

Summary form only given, as follows. The increasing application of polymers in microelectronics has aroused much interest in metal-polymer interfaces. In this talk it is reviewed how structure and formation of metal-polymer interfaces are controlled by the preparation process and the nature of the materials involved. Emphasis is put on noble metal deposition onto fully cured polyimides and polycar... View full abstract»

• ### Electromigration mechanisms in Cu lines

Publication Year: 1998
Cited by:  Papers (1)
| | PDF (42 KB)

Summary form only given. The electromigration in 0.15 /spl mu/m to 10 /spl mu/m wide and 0.3 /spl mu/m thick Cu lines deposited by physical vapor deposition has been investigated using both resistance and edge displacement techniques in the sample temperature range 225/spl deg/C-405/spl deg/C. For wide polycrystalline lines (>1 /spl mu/m), the dominant diffusion mechanism is a mixture of grain bou... View full abstract»

• ### A VLSI design of a pipeline FFT in GF(256)

Publication Year: 1998, Page(s):373 - 376
| | PDF (202 KB)

A pipeline VLSI design of FFT based on Good-Thomas algorithm is presented. To implement FFT with 255 points in GF(256), this design only needs 60 eight bits galois multipliers, a ROM to store 30 twiddles and some registers. The latency is 255+17 clock cycles, and the maximum combination delay is the sum of one multiplier in GF(256) and four stage XOR gates. This design is modular, regular, simple ... View full abstract»

• ### Discussion on the low-power CMOS latches and flip-flops

Publication Year: 1998, Page(s):477 - 480
Cited by:  Papers (1)
| | PDF (244 KB)

Latches and flip-flops used in low power circuits are discussed in this paper. Two kinds of latches of 5-T and 4-T are evolved from the standard 8-T static latch for low power application. Simulation results show that the 4-T latch has the lowest power consumption with no speed penalty. The 4-T latch is usually considered as dynamic. However, detailed analysis shows that it may be static under cer... View full abstract»

• ### Microstructure and fatigue resistance of solder interfaces

Publication Year: 1998
| | PDF (70 KB)

Summary form only given. The relationship between microstructure and fatigue resistance of solder interfaces was studied by examining micromechanisms and micromechanics of fatigue crack growth along a series of model interfaces. While the fatigue crack was seen to prefer staying in the solder when propagating at high rates, interfacial crack sliding was predominant in the near-threshold regime. A ... View full abstract»

• ### Nanocalorimetry measurements of materials having small dimensions

Publication Year: 1998
| | PDF (39 KB)

Summary form only given. The trend in microelectronic technology is toward nanometer size scales. Thermodynamic properties of material having small nanometer dimensions can be considerably different as compared to material in bulk form (e.g., the reduction of melting point). This occurs because of the tremendous influence of the surface energy. Calorimetry is the standard experimental technique us... View full abstract»

• ### Lead zirconate titanate thin films on GaAs for microwave device applications

Publication Year: 1998
Cited by:  Papers (2)  |  Patents (1)
| | PDF (52 KB)

Summary form only given. Bulk Acoustic Wave (BAW) resonant devices based on quartz crystals are widely used in electronic systems at frequencies up to a few tens of MHz. However for operation at higher frequencies the crystal must be made much thinner and consequently-ceases to be mechanically self supporting. Similarly, Surface Acoustic Wave (SAW) device dimensions shrink at high frequencies requ... View full abstract»

• ### Heat conduction in low-dimensional structures

Publication Year: 1998
| | PDF (329 KB)

Summary form only given, as follows: Understanding phonon heat conduction mechanisms in low-dimensional structures is of great interest for thermoelectric and microelectronic applications. In this paper, we discuss modeling and experimental results for heat conduction in 2-D and 1-D systems. For 2-D systems, models based on solving the phonon Boltzmann transport equation are developed for heat con... View full abstract»

• ### Discussion on the optical-coupling in silicon optical-type micromechanical sensors

Publication Year: 1998, Page(s):953 - 956
| | PDF (172 KB)

A flow-sensor and a resonator are fabricated on silicon substrate using the micromechanical technology. The devices are with a structure based on a silicon cantilever with waveguide on the surface to detect the movement of the silicon cantilever. The method to couple the laser into the waveguide is discussed and the performance of the fabricated devices are characterized. View full abstract»

• ### Author index

Publication Year: 1998, Page(s):962 - 973
| PDF (348 KB)
• ### Fundamentals of CMP for IC manufacturing: recent progress

Publication Year: 1998, Page(s):113 - 115
Cited by:  Patents (1)
| | PDF (168 KB)

Preston's equation, constituting the current basis for CMP process control and consumables development in IC manufacturing, was demonstrated recently to be fundamentally flawed for polishing with soft pads which are usually used in the IC industry. In contrast to the conventional Preston's equation, the pressure dependence of the removal rate (RR) for CMP with soft pads was found to be sublinear, ... View full abstract»

• ### The reliability of amorphous silicon thin film transistors for LCD under DC and AC stresses

Publication Year: 1998, Page(s):834 - 837
Cited by:  Papers (7)
| | PDF (256 KB)

In this paper, hydrogenated amorphous silicon and polycrystalline silicon thin film transistors have been stressed with various conditions including DC and AC. Charge trapping and defect state creation are the two mechanisms to degrade the transfer characteristics of the TFTs. For a-Si:H TFTs, the charge trapping occurs at a high silicon content in silicon nitride (SiNx) gate dielectric... View full abstract»

• ### 1H NMR studies of PECVD a-SiNX:H

Publication Year: 1998, Page(s):304 - 306
Cited by:  Patents (1)
| | PDF (112 KB)

1H NMR measurements were performed in plasma-chemical-vapor-deposited amorphous hydrogenated silicon nitride (PECVD a-SiNX:H) films. The spectra were used to analysis the hydrogen content and distribution which were varied with the deposition condition such as substrate temperature (Ts) and radiofrequency (rf) power. The effects of annealing were also discussed View full abstract»

• ### Steam-age preconditioning and NiPd finished IC packages

Publication Year: 1998, Page(s):546 - 549
| | PDF (256 KB)

Removal of lead (Pb) from finished integrated circuit (IC) packages is an ongoing effort by many manufacturers. To this end, the semiconductor industry is converting to nickel/palladium (NiPd) finished leadframes for assembly of ICs. This technology eliminates Pb from the IC package. Historically, users of IC components have used steam-aging to simulate accelerated aging of devices, to accentuate ... View full abstract»

• ### Manufacturing process of double-poly CMOS IC for digital-analogue mixed signals

Publication Year: 1998, Page(s):56 - 58
| | PDF (124 KB)

A double-poly CMOS processing for digital-analogue mixed signal ASIC is discussed in this paper, which is formed on the basis of standard CMOS processing and includes some special devices for digital-analogue mixed signal ASICs, such as polysilicon resistors and double polysilicon capacitors. These polysilicon resistors and polysilicon capacitors are fabricated by a processing compatible with stan... View full abstract»

• ### A method to improve field alignment registration accuracy in VLSI lithography

Publication Year: 1998, Page(s):109 - 112
| | PDF (216 KB)

A method which put some base marks onto a wafer prior to the first layer exposure to improve the registration accuracy of a field alignment lithographic system like Ultratech 1500 stepper has been introduced. The method can avoid a production disaster which may seriously affect the package yield and provide a high device yield, similar to the average yield of conventional processed lots View full abstract»

• ### Electronic switching in amorphous silicon devices: properties of the conducting filament

Publication Year: 1998, Page(s):830 - 833
Cited by:  Papers (3)  |  Patents (44)
| | PDF (228 KB)

It has been amply demonstrated that non-volatile memory switching in metal-hydrogenated amorphous silicon-metal structures is crucially dependent on the formation of a conducting filament during the very first switching operation. In this paper we review the evidence which shows that the filament is an inclusion in the amorphous silicon made up of metallic particles from the top contact dispersed ... View full abstract»

• ### Discharging and recharging of anomalous positive charges in MOSFETs

Publication Year: 1998, Page(s):301 - 303
| | PDF (124 KB)

The discharging of positive charges is found to increase with bias. Following the same discharging, higher recharging bias leads to larger recharging of APC. However, under the same recharging bias with different previous discharging, the recharging does show a different response. In particular, there is larger recharging after the larger previous discharging, whatever the same recharging bias View full abstract»

• ### Several reliability related issues for flip-chip packaging

Publication Year: 1998, Page(s):542 - 545
Cited by:  Papers (1)
| | PDF (320 KB)

In this paper, several reliability-related mechanics problems in flip-chip packages are discussed. These problems include failure modes (cracking and delamination) and prevention, underfill selection and design, board design effect of processing induced defects (settling effect, incomplete fill, debonding), ball pitch effect, solder joint fatigue, and reliability of conductive epoxy View full abstract»

• ### Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition

Publication Year: 1998, Page(s):673 - 676
| | PDF (196 KB)

The transient photoconductivity (PC) properties of a GaN thin film on a (0001) sapphire substrate are investigated. The decay curves of PC obtained by a YAG:Nd pulsed laser are divided into two special regions, which are the beginning and tail decay regions, corresponding to two time constants, 0.1 ms and 1.0 ms, respectively. Keeping the same light intensity and bias voltage, when the sample is h... View full abstract»

• ### A 6-level-metal CMOS process for 0.25-0.18 micron foundry manufacturing

Publication Year: 1998, Page(s):52 - 55
Cited by:  Papers (1)
| | PDF (256 KB)

A 0.25 μm CMOS technology, with 6 layers of fully planarized interconnect, has been developed for versatile, flexible, and fast turn-around foundry manufacturing. A 0.6 μm layout pitch has been successfully demonstrated for active, gate poly, and first metal layers. The 0.25 μm, 50 A Tox and the 0.35 μm, 65 A Tox devices were designed to support the 2.5 V core and the 3.3 V I/O circuit... View full abstract»

• ### Exposure of PMMA with STM under ambient condition

Publication Year: 1998, Page(s):106 - 108
| | PDF (156 KB)

The development of quantum electronics depends mainly on the development of nano-processing. STM is a powerful tool for nano-processing. Before, the exposure of PMMA with STM could only be done in ultra high vacuum. The problem for exposure of PMMA under ambient conditions is the instability of the tip at tunnel conditions. We used two measures to attack the problem: (1) We adopted a special proce... View full abstract»

• ### Design of ZnO/SiO2/Si monolithic integrated programmable SAW filter

Publication Year: 1998, Page(s):826 - 829
Cited by:  Patents (35)
| | PDF (168 KB)

In this paper the design of a ZnO/SiO2/Si monolithic integrated programmable SAW filter is suggested. The input SAW interdigital transducer (IDT) and tap delay lines (TDL) are fabricated on ZnO/SiO2 structure. A NMOS-DMOS sampling, weighting, controlling and summing integrated circuit is designed compatibly in SiO 2/Si structure. This IC can control the IDT and TDL... View full abstract»