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Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International

Date 18-20 Sept. 2012

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  • [Cover]

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  • Schedule

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  • [Title page]

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  • [Copyright notice]

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  • Table of contents

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  • Greetings

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  • Organizing committee

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  • Program

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  • Microwave ferroelectric and reconfigurable antennas

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    Nowadays, radioelectronic systems employ multiple antenna systems. Reconfigurable apertures are derived from a new class of antennas, which consist of a matrix of conducting patches with switches between some or all of the patches. These reconfigurable apertures can change functionality by opening or closing different connections between these patches. An example of the second group is the plasma regions with fairly high electrical conductivity, which are temporarily created on a silicon substrate. These regions define the antenna structure, and they can be changed to create different antennas. The key element of the antenna is a semiconductor chip that contains a set of individually controlled PIN structures. Electromagnetic waves propagate through the chip, which also serves as a planar dielectric waveguide. The PIN structures locally affect the wave propagation velocity, and the antenna can form a beam in practically any direction within a wide steering angle (like a leaky-wave antenna). The first investigations of the reconfigurable antennas, which are carried out at our Institute, show the extensive functionalities of this type of antenna. First of all, the reconfigurable antenna can be used as the conventional frequency scanning antenna. It is easy to see, that the reconfigurable antenna can direct radiation beam to desire direction. The first additional possibility in comparison with the conventional waveguide slot antenna, is that the reconfigurable antenna can be used for operating at one frequency, but with generating two or more different radiation patterns at different moments. The second extending possibility of the presented reconfigurable antenna is that the antenna can operate at different frequencies with supporting radiation in the same direction. Presented reconfigurable antenna consists of the reconfigurable aperture which is placed on, instead of the narrow wall of a rectangular waveguide. Aperture consist of a number of the reconfigurable elem- nts which are made as the surface PIN diodes (SPIN), and are excited by means of an electromagnetic field existing in a waveguide. The main drawback of the presented electronically reconfigurable antenna concept is fact that the directions of the beam can be chosen in a discrete way. Increasing the number of the reconfigurable elements causes decreasing of the angle distance between two neighbouring beam directions. However, some parameters of the SPIN diodes made the limitations of their utilization on microwave. Advances in several areas of materials science have led to a variety of new materials with strong potential applications to microwave and millimeter-wave components. The high tunability and low dielectric losses are only the desired properties of material which can be applied in the tunable micro- and mm-wave devices. Despite the enormous effort made to reduce the cost of the tunable devices, the desired progress has yet to be achieved. However a number of the device configurations are a promising solution to inexpensive steering. A new low-cost scan antenna concept (without phase shifters), applying ferroelectrics, has been presented. The property of ferroelectric materials having a dielectric constant which can be modulated at high frequencies, under the effect of an electric field bias operating perpendicular to the direction of propagation of the signal, is very attractive and can be used to develop a new family of devices operating in the microwave and mm-wave range. Ferroelectric materials are in many ways dual to ferromagnetic materials. However, they have a number of advantages over the magnetically controlled ferrites. In ferroelectric, the driven energy required to change the property of material goes primarily to change in the stored energy and is not dissipated in the ferroelectric material. As a consequence, less power is required to control the property of material. Ferroelectrics also allow for faster tuning compared to ferromagnetic materi View full abstract»

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  • A low power variable gain amplifier with 50-dB dynamic range

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    This paper presents a new structure of variable gain amplifier (VGA) in which a modified Gilbert Cell is firstly proposed to implement a low power wide dynamic range VGA. The proposed VGA can provide 50-dB dynamic range within a linear error of 1-dB. Furthermore, the proposed circuit consumes less than 0.5-mA current and occupies about only 0.12-mm2 chip area, both of which are relatively low in terms of the wide dynamic range provided by it. View full abstract»

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  • A wideband 0.13μm CMOS LC-VCO for IMT-Advanced and UWB applications

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    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1575 KB) |  | HTML iconHTML  

    This paper presents a wideband CMOS LC voltage controlled oscillator (VCO) with switched current source for 3.4-3.6GHz IMT-Advanced and 4.1-4.8GHz UWB applications. Reconfigurable LC tank with switch control is adopted to accomplish dual band operation and selection. The LC-VCO is fabricated in TSMC0.13μm CMOS process, and fully evaluated on wafer. Bias filters are used in this LC-VCO design to suppress reference current noise and bias line dynamic transient effects. Voltage supplied by 1.2V, the VCO consumes a current of 3mA at UWB band and 4.5mA at IMT-Advanced band. The measured VCO single sideband phase noise at 1MHz offset are -123dBc/Hz at 3.5GHz and -119dBc/Hz at 4.2GHz. View full abstract»

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  • Application of diffracted Gaussian beam analysis to design 3D configured quasi-optical systems

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    The efficiency and accuracy of the method diffracted Gaussian beam analysis (DGBA) has been validated by the commercial software GRASP, but the deficiency that it is only capable of analyzing 2D symmetrical quasi-optical systems limits its applications. In this paper, an extension to the 2D DGBA software is made to make it capable of analyzing 3D asymmetrical quasi-optical systems. And the results have been validated by the commercial software GRASP. The 3D software seems flexible and easy in designing 3D quasi-optical systems. View full abstract»

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  • CMOS millimeter-wave layout-dependent parasitic parameters extraction and optimization by full-wave EM method

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    This paper proposed a novel layout for cross-coupled pair to reduce its extrinsic resistive and capacitive parasitic parameters and another layout for differential pair to decrease the influence of Miller effect and some other parasitic effects. The equivalent circuits of the extrinsic parasitic network of these two structures are first derived and validated using EM simulation. The extraction equations of components in proposed parasitic network are also given. View full abstract»

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  • Compact and high selectivity dual-band dual-mode microstrip BPF with folded SIR

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    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (859 KB) |  | HTML iconHTML  

    In this paper, a compact and high selectivity dualband dual-mode microstrip bandpass filter (BPF) with source-load coupling is proposed using the short-stub-loaded folded SIR. Five transmission zeros can be generated near the passband edges and in the upper-stopband to improve the frequency selectivity and stopband performance, due to the main path signal counteraction and the folded arms of the resonator. The locations of the transmission zeros and stopband rejection level can be adjusted simply by varying the source-load coupling structure. Finally, a dual-band dual-mode BPF for GPS and WLAN applications is designed, fabricated and measured for experimental verification of the predicted results. And the measured results agree well with the EM simulations. View full abstract»

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  • Design of a reconfigurable Low Noise Amplifier for IMT-A and UWB systems

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    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (631 KB) |  | HTML iconHTML  

    A reconfigurable Low Noise Amplifier works on the bands of 4.2-4.8GHz IMT-A and 3.4-3.6GHz UWB is presented in this paper. The proposed LNA is based on inductive source degenerated cascade structure while switched capacitors and switched circuit are added to realize the dual-band operation. The simulation results show that, in the band of 3.4-3.6GHz, the NF is lower than 2.3dB, the gain is higher than 17dB, and in the band of 4.2-4.8GHz, the NF is lower than 2.6dB, the gain is higher than 19dB. According to the simulation results, the proposed LNA achieves dual-band operation, which proves the feasibility of the proposed topology. The LNA is fabricated in TSMC 0.13-μm process while consuming 15.4mA from a 1.2V supply. View full abstract»

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  • Design of lower power 4×10Gb/s VCSEL driver array

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    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (1112 KB) |  | HTML iconHTML  

    A 4-channel Vertical Cavity Surface Emitting Laser (VCSEL) driver array is designed in a 0.18μm CMOS technology. Simulated results show that each channel works at 10Gb/s (12.5Gb/s max) under a supply voltage of 1.8 V. Thus, aggregated total capacity of 40 Gb/s can be obtained from 4 channels. The power dissipation of each channel is only 50mW. To decrease the fall time of the output waveform, C3A (Capacitively Coupled Current Amplifier) technique [1] is exploited. The VCSEL driver can be used in optical inter-connections between high speed chips. View full abstract»

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  • Design of VGA for 6 GHz radio frequency communication system

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    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (845 KB) |  | HTML iconHTML  

    This paper presents the design and analysis of a large-gain-range wide-bandwidth VGA in 0.13 μm CMOS for 6GHz RF communication system. The principles of AGC and the role of VGA in it are discussed; the main structures of CMOS VGA are systematically studied, as well as the realization of exponential function in CMOS process. A structure based on cascode amplifier is adopted as variable gain unit for the designed VGA, which can achieve gain controllable and exponential characteristic at the same time; the active inductor peaking circuit is applied to extend the bandwidth; the dual feedback DC-offset cancellation circuits are used to reduce the overall DC-offset. The post simulation results show that the dB-linear gain range is 70dB (-4dB~66dB); the 3dB bandwidth is 600MHz; the power consumption is about 9.8mW from 1.2V power supply. View full abstract»

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  • Experimental demonstration of frequency-octupled millimeter-wave signal generation based on a dual-parallel Mach-Zehnder modulator

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    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (655 KB) |  | HTML iconHTML  

    A frequency octupling system based on a dual-parallel Mach-Zehnder modulator (DPMZM) and a wavelength-fixed optical notch filter is experimentally demonstrated. A millimeter-wave signal tunable from 36.8 to 42.4 GHz is generated when a microwave drive signal from 4.6 to 5.3 GHz is applied to the DPMZM. The spectral purity of the generated signal is also theoretically and experimentally studied. An electrical harmonic suppression ratio of more than 30 dB is achieved. View full abstract»

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  • High selectivity dual-band dual-mode microstrip BPF with multi-zeros

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    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (859 KB) |  | HTML iconHTML  

    In this paper, a high selectivity dual-band dualmode microstrip bandpass filter (BPF) with multi-zeros is proposed utilizing short-stub-loaded folded SIRs and Y-shaped source-load coupling structure. The folded SIR supports two non-degenerated modes, thus achieving two independently controlled passbands with adjustable bandwidths by means of coupling two such SIRs. Due to the main path signal counteraction and the folded arms of the SIRs, five transmission zeros can be generated near the passband edges and in the upper-stopband to improve frequency selectivity. Zero Tz1 is created at the lower-stopband by the loaded short stub to improve stopband rejection of lower frequency. Three zeros are created in the upper-stopband owning to the special feed structure. To verify the principle above, one filter prototype with altogether nine transmission zeros is simulated, fabricated and measured for experimental verification of the predicted results. View full abstract»

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  • Investigation of DCS1800/TD-LTE dual-mode and dual-link UE system performance based on the high isolation handset antenna

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    Save to Project icon | Request Permissions | Click to expandQuick Abstract | PDF file iconPDF (841 KB) |  | HTML iconHTML  

    This paper investigates the performance of DCS1800/TD-LTE dual-mode and dual-link (DM-DL) UE, and presents an effective solution based on our designed high isolation antenna for the UE local electromagnetic interference (EMI). Firstly, we bring out a DCS1800/TD-LTE DM-DL UE system model, together with its interference analysis and performance evaluation. It is revealed that the receiving sensitivity of TD-LTE can be greatly interfered by the DCS1800 local interference. To alleviate this DCS1800 local interference, then, a compact and high isolation double-band handset antenna is given with its structure designed and performance validated. On the basis of this antenna and existing bandpass filter, we introduce a solution called "passive isolation" to solve the DM-DL co-existence issue. Finally, we research the performance of DCS1800/TD-LTE DM-DL UE again by our proposed solution. Simulated results indicate that the isolation effect is quite good and the DM-DL UE can work unaffectedly. View full abstract»

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  • Ka-band dual circularly polarized transceiver antenna for medical applications

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    A Ka-band circularly polarized transceiver antenna for Blood flow velocity measurement is presented by the simulation method in this paper. To realize circular polarization and integrative transceiver, a quadrature hybrid with two ports is used to offer phase difference. According to the simulation result, the antenna has a high gain as well as great Front-to-Back ratio. Meanwhile, the input isolation is quite high in the operation frequency (29.8GHz). At that frequency, the maximum Doppler frequency shift can achieve hundreds of Herz which will greatly improve the measuring resolution. Moreover, the size of the antenna is very compact so that it can get higher accuracy when detecting arteries or venae about 3~5mm in diameter. View full abstract»

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  • Low-power ultra-wideband power detector IC in 130 nm CMOS technology

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    This paper presents a low operation voltage ultra-wideband power detector IC for microwave and millimeter-wave applications. The power detector circuit includes an nMOS transistor differential pair with a resistive feedback. The power detector IC was designed and fabricated using TSMC 130 nm CMOS technology. The detector IC exhibits an operation frequency from 100 MHz to 40 GHz at an operation voltage of 0.6 to 1.2 V. The minimum detectable power is -16 dBm at 40 GHz with a dc power consumption of only 0.116 mW. View full abstract»

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  • Preliminary design of a W-band third harmonic gyrotron

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    The design of a W-band third harmonic gyrotron operating at the TE6,1 mode is presented. The low order whispering gallery mode TE6,1 is chosen as the operating mode for the purpose of suppressing mode competition with lower harmonic modes. And an iris resonator is used in order to lower the start current of the third harmonic mode. The numerical simulation results show that a single mode third harmonic radiation with power of 16 kW can be expected at a beam voltage of 45 kV and current of 3 A, and magnetic field 1.19 T, corresponding to the electronic efficiency of 12%. View full abstract»

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  • Towards Greener Smartphones with microwave measurements

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    Summary form only given. Today's smartphone handsets offer a wide range of functions (phone, GPS, Bluetooth, WiFi,.) to customers, although are still perceived as expensive and energy consuming (requiring a daily recharge). The aim of this talk is to show how microwave measurements impact smartphone design. By optimally engineering the type of measurements made before and after design (linear, nonlinear, loadpull, modulation,.), the efficiency of the design process not only increases, but tougher specifications such as smaller form factor and lower energy consumption can be met more easily. This observation is especially valid in the design of green multi-mode wireless radios, due to the delicate balance between energy efficiency and linearity (that is, cross talk between channels). View full abstract»

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  • Novel materials and devices for millimeter-wave and THz applications

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    Summary form only given. In spite of the recent progress in quantum-cascade lasers, vacuum microelectronics, and transistors based on Si, InP and GaN, the search for compact THz sources continues. One alternative approach involves hetero-structures of two-dimensional (2D) layers which exploit the unique properties of graphene, silicene, germanene, BN, MoS2, NbSe2, etc. For example, basically, graphene is a conductor, 2D BN is an insulator, 2D MoS2 is a semiconductor, and 2D NbSe2 is a superconductor. The quality of graphene grown on hexagonal BN substrates is already approaching that of exfoliated graphene, while 2D BN of variable quality has been grown on graphene. Still, challenges remain in growing 2D layers on top of each other without metal catalysts by using van der Waals epitaxy and other techniques for uniform growth over large areas. Another alternative approach involves complex oxides and chalcogenides of transition metals, which can be deposited on almost any substrate with fault tolerance and radiation hardness. For example, ZnO transistors have already been demonstrated at microwave frequencies, while the interface of LaAlO3 and SrTiO3 has been found to contain a 2D electron density of 1014/cm2, which is two orders of magnitude higher than that in Si and InP transistors and one order of magnitude higher than that in GaN transistors. However, the electron mobility generally decreases with increasing ionicity of these ionic compounds. Yet, with correlated states and transport for electrons at such high concentrations, they may collectively exhibit high mobility. Other novel phenomena such as metal-insulator transition and topologically preserved states can also be exploited. View full abstract»

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