Issue 11 • Nov. 2013
Table of contentsPublication Year: 2013, Page(s): C1| |PDF (383 KB)
IEEE Journal of the Electron Devices Society publication informationPublication Year: 2013, Page(s): C2| |PDF (143 KB)
Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance. The BiCMOS process is divided into blocks, and the ordering of their processing is optimized so that they do not interfere with each other. Low-thermal-budget SiGe HBT formation is achieved using a minimal-moisture-desorption oxide ... View full abstract»
IEEE Journal of the Electron Devices Society information for authorsPublication Year: 2013, Page(s): C3| |PDF (101 KB)
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