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IEEE Journal of the Electron Devices Society

Issue 3 • March 2013

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Displaying Results 1 - 6 of 6
  • Table of contents

    Publication Year: 2013, Page(s): C1
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    Freely Available from IEEE
  • IEEE Journal of the Electron Devices Society publication information

    Publication Year: 2013, Page(s): C2
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  • Semiconductor Logic Technology Innovation to Achieve Sub-10 nm Manufacturing

    Publication Year: 2013, Page(s):66 - 75
    Cited by:  Papers (11)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (7416 KB) | HTML iconHTML

    Moore's Law represents the cumulative effort by many participants to advance the productivity of electronic systems over the last 40+ years, resulting in enormous strides in the capability and ubiquity of electronics. This paper identifies the innovation challenges the semiconductor industry must overcome in order to propel the advance of semiconductor technology to the cadence of Moore's Law. Key... View full abstract»

    Open Access
  • Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic

    Publication Year: 2013, Page(s):76 - 82
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2271 KB) | HTML iconHTML

    We discuss the characteristics of new sensing elements based on a symmetrical metal-semiconductor-metal structure, which are designed for detection of microwave-terahertz signals. The schemes of connection of the sensing elements in the high-frequency path and the low-frequency measuring circuit are considered. Expressions for the volt-watt sensitivity and the noise-equivalent power are obtained. ... View full abstract»

    Open Access
  • Constriction Resistance and Current Crowding in Vertical Thin Film Contact

    Publication Year: 2013, Page(s):83 - 90
    Cited by:  Papers (7)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (4412 KB) | HTML iconHTML

    The constriction resistance and the current flow pattern are calculated analytically in a vertical thin film contact in which the thin film base is an equipotential surface. Both Cartesian and cylindrical thin film contacts are studied. The resistivities and the geometric dimensions in the individual contact members may assume arbitrary values. General scaling laws are constructed for the constric... View full abstract»

    Open Access
  • IEEE Journal of the Electron Devices Society information for authors

    Publication Year: 2013, Page(s): C3
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Aims & Scope

The IEEE Journal of the Electron Devices Society (J-EDS) is an open access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices.

Full Aims & Scope

Meet Our Editors

Editor-In-Chief

MIKAEL ÖSTLING
KTH Royal Institute of Technology
School of Information and Communication
Technology
Kista, Sweden
ostling@kth.se,
mostling@kth.se