By Topic

Microelectronics (MIEL), 2012 28th International Conference on

Date 13-16 May 2012

Filter Results

Displaying Results 1 - 25 of 115
  • 2012 28th International Conference on Microelectronics Proceedings [Cover]

    Publication Year: 2012, Page(s): c1
    Request permission for commercial reuse | PDF file iconPDF (1380 KB)
    Freely Available from IEEE
  • 29th International Conference on Microelectronics - Call for papers

    Publication Year: 2012, Page(s): 1
    Request permission for commercial reuse | PDF file iconPDF (1384 KB)
    Freely Available from IEEE
  • 2012 28th International Conference on Microelectronics Proceedings [title page]

    Publication Year: 2012, Page(s): i
    Request permission for commercial reuse | PDF file iconPDF (47 KB)
    Freely Available from IEEE
  • Published by the Electron Devices Society of the Institute of Electrical and Electronics Eengineers, Inc. [Copyright notice]

    Publication Year: 2012, Page(s): ii
    Request permission for commercial reuse | PDF file iconPDF (1380 KB)
    Freely Available from IEEE
  • Steering committee

    Publication Year: 2012, Page(s):iii - iv
    Request permission for commercial reuse | PDF file iconPDF (147 KB)
    Freely Available from IEEE
  • Contents

    Publication Year: 2012, Page(s):v - xii
    Request permission for commercial reuse | PDF file iconPDF (340 KB)
    Freely Available from IEEE
  • MIEL 2010 best paper awards

    Publication Year: 2012, Page(s): xiii
    Request permission for commercial reuse | PDF file iconPDF (94 KB)
    Freely Available from IEEE
  • Mini-colloquium: Nanotechnologies [breaker page]

    Publication Year: 2012, Page(s): 1
    Request permission for commercial reuse | PDF file iconPDF (35 KB)
    Freely Available from IEEE
  • Quantum Transport in Nanowires and Nanographene

    Publication Year: 2012, Page(s):3 - 10
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (411 KB) | HTML iconHTML

    Transport in nanowires and nanographene with emphasis on nanotubes is reviewed from classical to quantum, low-field to high-field, nondegenrate to degenerate, scattering limited to ballistic, and beyond. Nonequilibrium Arora distribution function (NEADF) is shown to be an outgrowth of the Fermi-Dirac statistics by inclusion of the energy gained in a mean free path (mfp). NEADF is highly asymmetric... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Challenges of electrostatic discharge (ESD) protection in silicon nanowire technology

    Publication Year: 2012, Page(s):11 - 13
    Cited by:  Papers (2)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (421 KB) | HTML iconHTML

    Electrostatic discharge (ESD) induced failures continue to be a major reliability concern in the semiconductor industry. Such a concern will in fact be intensified as the CMOS technology is scaling toward the 22-nm and beyond. This paper covers the issues and challenges pertinent to the design of electrostatic discharge (ESD) protection solutions of modern and future integrated circuits, including... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Quantum computers: Registers, gates and algorithms

    Publication Year: 2012, Page(s):15 - 21
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (272 KB) | HTML iconHTML

    Quantum computing is a process that incorporates interacting physical systems that represent quantum bits and quantum gates. We present the quantum bit (qubit), the quantum register and the quantum gates. The qubit is described as a vector in a two-dimensional Hilbert space and the quantum register, which comprises a number of qubits, as a vector in a multidimensional Hilbert space. Quantum gates ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Spatial statistics for micro/nanoelectronics and materials science

    Publication Year: 2012, Page(s):23 - 30
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1312 KB) | HTML iconHTML

    Spatial statistics is a specialized branch of statistics aimed to provide information about the locations of randomly distributed objects in 1, 2 or 3 dimensions. The analysis involves data exploration, parameter estimation, model fitting and hypothesis formulation. In particular, in this work, we present some recent advances in the characterization of the spatial distribution of breakdown spots o... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Development of biomedical applications of non-equilibrium plasmas and possibilities for atmospheric pressure nanotechnology applications

    Publication Year: 2012, Page(s):31 - 38
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (428 KB) | HTML iconHTML

    In this paper we discuss the synergisms between different realms of plasma supported nanotechnologies. First the developments in plasma etching for micro and later nanoelectronics have fueled immense growth of knowledge and tools in describing non-equilibrium plasmas. This has led to detailed predictive codes and that knowledge has been used to develop a large number of new sources of non-equilibr... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Plenary sessions [breaker page]

    Publication Year: 2012, Page(s): 39
    Request permission for commercial reuse | PDF file iconPDF (29 KB)
    Freely Available from IEEE
  • Surface multiplasmonics for optical sensing and solar-energy harvesting

    Publication Year: 2012, Page(s):41 - 43
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (138 KB) | HTML iconHTML

    The planar interface of a metal and a dielectric material can guide multiple surface-plasmon-polariton (SPP) waves-all of the same frequency, but different phase speed, attenuation rate, and spatial profiles of fields-provided that the dielectric material is periodically nonhomogeneous in the direction normal to the interface. Theoretical and experimental research during the last four years have v... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • NeoSilicon based nanoelectromechanical information devices

    Publication Year: 2012, Page(s):45 - 48
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (508 KB) | HTML iconHTML

    NeoSilicon is a novel functional material consisted of ensemble of nanocrystalline Si quantum dots with controlled dot size and inter-dot distance. Bandgap of NeoSilicon can be controlled by dot size due to the quantum size effect and transport properties are controlled by inter-dot distance due to the tunneling effect. A variety of new applications, such as ballistic electron surface emitting dis... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Recent developments in advanced memory modeling

    Publication Year: 2012, Page(s):49 - 52
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (378 KB) | HTML iconHTML

    We discuss different memory technologies based on new storage information principles, highlight the most promising candidates for future universal memory, and give an overview of modeling methods. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Photovoltaics: Emerging role as a dominant electricity generation technology in the 21st century

    Publication Year: 2012, Page(s):53 - 63
    Cited by:  Papers (5)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1056 KB) | HTML iconHTML

    Photovoltaics (PV) offer a unique opportunity to solve the 21st century's electricity generation problem because solar energy is essentially unlimited and PV systems provide electricity without any undesirable impact on the environment. With current technology of silicon based PV systems, volume manufacturing, appropriate business model and without any subsidy, PV electricity can be generated toda... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Computational study toward micro electronics engineering

    Publication Year: 2012, Page(s):65 - 70
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1095 KB) | HTML iconHTML

    Computational Science became crucial techniques for designing future micro electronics engineering. In this paper, we describe the examples which aim the designing of future micro electronics devices such as charge trap memories and resistive random access memories based on the computational science. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Session: Device physics and technologies [breaker page]

    Publication Year: 2012, Page(s): 71
    Request permission for commercial reuse | PDF file iconPDF (35 KB)
    Freely Available from IEEE
  • Analytical analysis of a p-n junction with arbitrary shaped doping profile

    Publication Year: 2012, Page(s):73 - 76
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (571 KB) | HTML iconHTML

    Analysis of a p-n junction with arbitrary value of the grading coefficient is conduced. Presented solution is linking the grading coefficient of widely used diode's depletion layer capacitance equation with analytically defined impurity doping profile. Derivations are verified against numerical simulations based on the finite element method which experimentally prove the correctness. Also, analyti... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A new current-programmed pixel design for AMOLED displays implemented with organic thin-film transistors

    Publication Year: 2012, Page(s):77 - 80
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (180 KB) | HTML iconHTML

    A new current-programmed pixel design for AMOLED displays is presented in this manuscript. The proposed pixel is designed by using organic thin-film transistors and it exhibits high immunity to the threshold voltage variations of the transistors threshold voltage shift, caused by the bias stress and the intrinsic properties of the organic materials. The pixel's main advantages are the fact that it... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Modification of Schottky interface by the inclusion of DNA interlayer to create metal / organic / inorganic structures

    Publication Year: 2012, Page(s):81 - 84
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1007 KB) | HTML iconHTML

    In this paper, we describe the fabrication and testing of the organic/inorganic Al/DNA/Si Schottky diodes. DNA interlayers are introduced into silicon structures and their electrical characteristics are modified as a result of the Schottky barrier manipulation. Processing of the silicon and DNA is described and the details of the used materials are presented. The novel process step, introduction o... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Design, simulation, and fabrication of a new poly-Si based capacitor-less 1T-DRAM cell

    Publication Year: 2012, Page(s):85 - 88
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (746 KB) | HTML iconHTML

    In this paper, we propose a new fabrication method to form a polysilicon thin-film transistor with a smiling SiO2 layer. The experimental results suggest that the short-channel effects can be significantly reduced because the trench oxide is utilized to block the drain electric field. Furthermore, the so-called S/D tie can help to overcome the self-hating for enhancing the thermal relia... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Poster session: Device physics and technologies [breaker page]

    Publication Year: 2012, Page(s): 89
    Request permission for commercial reuse | PDF file iconPDF (35 KB)
    Freely Available from IEEE