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2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)

19-21 Oct. 2011

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  • [Front cover]

    Publication Year: 2011, Page(s): c1
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  • Information page

    Publication Year: 2011, Page(s): 1
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  • [Copyright notice]

    Publication Year: 2011, Page(s): 2
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  • Welcome message from Shen-Li Fu, conference chair

    Publication Year: 2011, Page(s):3 - 7
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  • Committee member

    Publication Year: 2011, Page(s):8 - 10
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  • Plenary speech

    Publication Year: 2011, Page(s):11 - 13
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  • Session 2: Index

    Publication Year: 2011, Page(s): 14
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  • Session 3: Index

    Publication Year: 2011, Page(s): 15
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  • Session 4: Index

    Publication Year: 2011, Page(s): 16
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  • Session 6: Index

    Publication Year: 2011, Page(s): 17
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  • Session 7: Index

    Publication Year: 2011, Page(s): 18
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  • Session 9: Index

    Publication Year: 2011, Page(s): 19
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  • Session 10: Index

    Publication Year: 2011, Page(s): 20
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  • Session 11: Index

    Publication Year: 2011, Page(s): 21
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  • Session 12: Index

    Publication Year: 2011, Page(s): 22
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  • Session 14: Index

    Publication Year: 2011, Page(s): 23
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  • Session 15: Index

    Publication Year: 2011, Page(s): 24
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  • Session 16: Index

    Publication Year: 2011, Page(s): 25
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  • Session 26: Index

    Publication Year: 2011, Page(s): 26
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  • Poster session: Index

    Publication Year: 2011, Page(s):27 - 28
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  • The wetting interaction between electroless NiP deposit/Cu substrate and SnAg solder

    Publication Year: 2011, Page(s):29 - 32
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (731 KB) | HTML iconHTML

    Electroless NiP deposit has been frequently mentioned as the barrier laer for Cu substrate or metallization for the soldering process. The NiP deposit is solderable with many solders at appropriate temperature and operation condition. The present study attempted to investigate the wetting behavior of the Sn3Ag solder on the electroless NiP with wetting balance at 250°C and 270°C. The... View full abstract»

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  • Leadless IC package with a substrate produced by copper/nickel/copper-3-layer-clad material

    Publication Year: 2011, Page(s):33 - 36
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1442 KB) | HTML iconHTML

    Terminal units such as mobile phones, portable game systems and electronic books, have spread all over the world and advanced to be smaller, more lightweight and thinner every moment. Simultaneously, the inner electronic parts such as batteries, IC packages and connectors were also smaller and thinner. For example, in order to reduce the occupied area and space on the printed circuit board (PCB), ... View full abstract»

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  • Palladium surface finishes for copper wire bonding (Part I: The selection of surface finishes)

    Publication Year: 2011, Page(s):37 - 41
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (608 KB) | HTML iconHTML

    During the past two years, fine pitch copper wire bonding has finally entered high volume production. It is estimated that nearly 15% of all wire bonders used in production are now equipped for copper wire bonding. Most of these are used exclusively for copper wire bonding. In terms of pitch, copper wire is only barely lagging behind the most advanced gold applications. The most commonly used copp... View full abstract»

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  • Vacuum underfill technology for advanced packaging (IMPACT 2011)

    Publication Year: 2011, Page(s):42 - 46
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (720 KB) | HTML iconHTML

    We developed vacuum underfill (VCUF) technology for large die (>;18 × 18 mm) with fine pitch area array bumps (<; 150 μm pitch) to solve a critical underfill void issue. Material development and process optimization are the keys to realize a stable process for future package. It was also confirmed that the newly developed underfill materials have good reliability on the large d... View full abstract»

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  • Microwave hydrogen plasma annealing to improve electrical and optical properties of aluminum doped zinc oxide films

    Publication Year: 2011, Page(s):47 - 50
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (881 KB) | HTML iconHTML

    To investigate whether microwave hydrogen plasma can improve the electrical and optical properties of aluminum doped zinc oxide (AZO) films or not, AZO films prepared with different substrate temperature were treated with microwave hydrogen plasma. The AZO films were post-treated by one 2.45 GHz microwave hydrogen plasma system with 25 torr, 700 W and 10 minutes. It was observed the electrical and... View full abstract»

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