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Semiconductor Manufacturing (ISSM), 2010 International Symposium on

Date 18-20 Oct. 2010

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  • CD-ROM index

    Publication Year: 2010, Page(s): 1
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  • Welcome to ISSM 2010

    Publication Year: 2010, Page(s): 1
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  • Message from ISSM 2010 executive committee chair

    Publication Year: 2010, Page(s): 1
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  • Message from ISSM 2010 Japan program committee chair

    Publication Year: 2010, Page(s): 1
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  • ISSM 2010 Committee

    Publication Year: 2010, Page(s):1 - 2
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  • ISSM 2010 sponsoring organizations

    Publication Year: 2010, Page(s): 1
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  • ISSM 2010 sponsorship acknowledgement

    Publication Year: 2010, Page(s): 1
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  • ISSM 2010 program at a glance

    Publication Year: 2010, Page(s): 1
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  • ISSM 2010 keynote speeches

    Publication Year: 2010, Page(s): 1
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (284 KB) | HTML iconHTML

    Provides an abstract for each of the invited presentations and a brief professional biography of each presenter. The complete presentations were not made available for publication as part of the conference proceedings. View full abstract»

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  • Smartgrid for future green society

    Publication Year: 2010, Page(s): 1
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  • Advanced process control for nano technology manufacturing

    Publication Year: 2010, Page(s): 1
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  • 3D-TSV overview

    Publication Year: 2010, Page(s): 1
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  • Relentless innovation: The case for agility in semiconductor manufacturing

    Publication Year: 2010, Page(s): 1
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  • Technologies and trends related to power module

    Publication Year: 2010, Page(s): 1
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  • More-than-moore reinvented

    Publication Year: 2010, Page(s): 1
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  • Perspective of CMOS technology

    Publication Year: 2010, Page(s): 1
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  • ISSM 2010 program schedule

    Publication Year: 2010, Page(s):1 - 6
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  • Papers of ISSM 2010

    Publication Year: 2010, Page(s):1 - 4
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  • ISSM 2010 contact information

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  • Smartgrid for future green society

    Publication Year: 2010, Page(s):1 - 36
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (25217 KB) | HTML iconHTML

    This paper discusses about the smart grid. It is a combination of power network and communication network. Power semiconductor market will grow by expanding power network, also with DGs and batteries. MPU and memory set market will expand by implementation of new communication system. Sensors and Monitoring equipment will require additional controller circuits for collecting data. View full abstract»

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  • ALD-SiO2 deposition and CD slimming techniques for double patterning and a heater-less batch tool

    Publication Year: 2010, Page(s):1 - 3
    Cited by:  Patents (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1633 KB) | HTML iconHTML

    An atomic layer deposition (ALD)-SiO2 film for use as the spacer mask in self-aligned double patterning (DP) and a slimming process of critical dimension (CD) for the photoresist pattern are described. The ALD-SiO2 film deposition and the photoresist pattern slimming are processed with the vertical batch semiconductor production system for 300 mm wafers at room temperature. T... View full abstract»

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  • Crystalline grain size of nickel-platinum silicide films and their impact on device characteristics

    Publication Year: 2010, Page(s):1 - 4
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1399 KB) | HTML iconHTML

    The recently developed partial-conversion (PC) process was examined for the fabrication of a nickel-platinum silicide film. The PC process can drastically improve the SRAM standby current characteristics. The underlying mechanism was also investigated with respect to the crystalline structure and it was confirmed that the improvement was due to a reduction of the crystalline grain size of the sili... View full abstract»

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  • Methods to eliminate pattern collapse in mass production by the resist replacement without changing model-based optical-proximity-correction

    Publication Year: 2010, Page(s):1 - 3
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (900 KB) | HTML iconHTML

    Pattern collapse issue was successfully eliminated by the addition of hydrophobic and transparent additives into the resist. The additives form 25 nm-thick layer at the top of the new resist. The layer reduces maximum-tensile-stress acting on resist patterns by 22% due to the hidrophobicity. It was also found that the layer hardly affected the optical-proximity-effect (Difference of thorough-pitch... View full abstract»

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  • Hydrogen concentration effect during RIE process for piezo resistor of MEMS pressure sensor

    Publication Year: 2010, Page(s):1 - 4
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1232 KB) | HTML iconHTML

    We studied the influences of RIE process conditions for the thick dielectric films on the counter doped resistor layer, and found that only CHF3/Ar condition causes the decrease of the resistance. The optimization of CHF3 partial pressure enabled to reduce nonuniformiy of the resistance. We considered that “hydrogen concentration effect” caused the decrease of t... View full abstract»

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  • Improvement of gate critical dimension for 40nm node device

    Publication Year: 2010, Page(s):1 - 3
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1606 KB) | HTML iconHTML

    We tried to improve the variation of gate critical dimension(CD) within-wafer for 40nm node device at gate etching condition especially Bottom-Anti-Reflective-Coat (BARC) etching step. Gas diffusion influences in the etching chamber and temperature effects of electrostatic chucked (ESC) were investigated in this study. Finally it was achieved the optimal etching condition which significantly impro... View full abstract»

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