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Semiconductor Electronics (ICSE), 2010 IEEE International Conference on

Date 28-30 June 2010

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Displaying Results 1 - 25 of 112
  • [Front cover]

    Publication Year: 2010, Page(s): c1
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  • [Spine]

    Publication Year: 2010, Page(s): 1
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  • [Back cover]

    Publication Year: 2010, Page(s): c4
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  • [Front inside cover]

    Publication Year: 2010, Page(s): c2
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  • [Copyright notice]

    Publication Year: 2010, Page(s): 1
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  • International Advisory Committee

    Publication Year: 2010, Page(s): 1
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  • Organizing Committee

    Publication Year: 2010, Page(s): 1
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  • Scope of conference

    Publication Year: 2010, Page(s): 1
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  • Message from chair of ED chapter, IEEE Malaysia section (co-chair ICSE2010)

    Publication Year: 2010, Page(s): 1
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  • Table of contents

    Publication Year: 2010, Page(s):1 - 8
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  • Keynote papers

    Publication Year: 2010, Page(s): 1
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (3 KB)

    Provides an abstract for each of the keynote presentations and a brief professional biography of each presenter. The complete presentations were not made available for publication as part of the conference proceedings. View full abstract»

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  • Ballistic transport in nanowires and carbon nanotubes

    Publication Year: 2010, Page(s):A1 - A7
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2047 KB) | HTML iconHTML

    The charge carriers in nanowires (NWs), carbon nanotubes (CNTs), and those confined to a very high magnetic field have one-dimensional (1D) character as quasi-free propagation of electron waves with analog energy spectrum exists only in one direction. The energy spectrum is quantum (or digital) in other two cartesian directions where electron waves are standing waves. In the quantum limit, an elec... View full abstract»

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  • Semiconductor fabrication eco-systems and supply chain in Malaysia

    Publication Year: 2010, Page(s): A8
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (437 KB) | HTML iconHTML

    The electronic industry is the leading sector in Malaysia's manufacturing sector, contributing significantly to the country's manufacturing output 29.3%, export 55.9% and employment of 28.8%. In 70's Malaysia is well known for the backend manufacturing. In 2000 Malaysia established it's semiconductor fabrication facilities to fill in one of the major gaps in supply chain that generates RM0.5Billio... View full abstract»

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  • Nanostructures of III-V semiconductor for photonic, electronic, and sensing applications back to basics

    Publication Year: 2010, Page(s): A9
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (407 KB) | HTML iconHTML

    With the advancement of technology, the semiconductor materials are fabricated with ever shrinking size in order to reduce space and weight while at the same time benefiting from the improved performance such as high speed and low operating power. Recently found phenomena called, quantum confinement (QC) effects related to semiconductor material reaching the size in nanometer scale, only added to ... View full abstract»

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  • Chemical sensors fabricated in CMOS-MEMS technology

    Publication Year: 2010, Page(s): A10
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (440 KB) | HTML iconHTML

    This presentation is an overview of standard Integrated Circuits technology that enables the integration of the chemical sensors with the necessary driving and signal conditioning circuitry on the same chip. A variety of Complementary Metal Oxide Semiconductor (CMOS)-based chemical sensors found in the literature and the microprocessing technologic steps necessary for the integration of microelect... View full abstract»

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  • Ubiquitous sensor technologies: The way moving forward

    Publication Year: 2010, Page(s): A11
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (438 KB) | HTML iconHTML

    This presentation provides strategic direction for ubiquitous sensor networks and how we can benefit from the technology for the betterment of our lifes. An overview of the global progress is presented and the values of the technology in terms of the realization of WSN implementation in many vertical applications such as in the agriculture, medical, transportation and environment will be given.Som... View full abstract»

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  • GaAs based diffusion welded high voltage diode stacks

    Publication Year: 2010, Page(s):1 - 4
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (954 KB) | HTML iconHTML

    The determination of technical requirements for GaAs epistructures intended for high voltage diode stacks has been made. The suitable doping level of p+ substrate was estimated by the contact resistance measurements. Analysis has shown that for the p+ substrates with the current densities about 0.5-1 A/cm2 the specific contact resistance depends weakly on doping concentration (at least in the rang... View full abstract»

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  • Electrical properties of sputtered deposited tungsten silicide films

    Publication Year: 2010, Page(s):5 - 7
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (769 KB) | HTML iconHTML

    This paper addresses the effect of substrate temperature and deposition pressure on the electrical properties of Direct Current (DC) plasma magnetron sputter-deposited Tungsten Silicide (WSi) films on silicon substrates. Results from experiments show that, substrate temperature and deposition pressure has exerted significant influence on the electrical properties of the WSi films. The electrical p... View full abstract»

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  • Strain cancellation by indium incorporation for the calibration of nitrogen fractions in GaAsN

    Publication Year: 2010, Page(s):8 - 11
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (732 KB) | HTML iconHTML

    This paper reports a study of strain cancellation by adding indium to GaAs1-yNy epitaxial layers as a method of calibrating the nitrogen fraction y. The aim was to determine the In fraction x in an InxGa1-xAs1-yNy epitaxial layer which exactly cancels the strain present in a GaAs1-yNy layer with the same nitrog... View full abstract»

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  • Comparison on I-V performances of Silicon PIN diode towards width variations

    Publication Year: 2010, Page(s):12 - 14
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (719 KB) | HTML iconHTML

    The performance of the PIN diode is very much depends on the chip geometry and the semiconductor material used, especially in the intrinsic region. The biasing voltage applied to the PIN diode determines the amount of holes and electrons injected into the intrinsic region and the values of its resistivity. This will give effect to the I-V performance of the PIN diode. This research studied the eff... View full abstract»

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  • Evaluation of multi-layered gate design on GME-TRC MOSFET for wireless applications

    Publication Year: 2010, Page(s):15 - 18
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (730 KB) | HTML iconHTML

    In this paper, the impact of multi-layered gate design assimilation on Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET has been studied for wireless applications in terms of linearity performance metrics, using device simulators: ATLAS and DEVEDIT, and compared with conventional Trapezoidal Recessed channel (TRC) and GME-TRC MOSFETs. Simulation study reveals that GME-TRC MOS... View full abstract»

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  • Analyze and optimize the silicide thickness in 45nm CMOS technology using Taguchi method

    Publication Year: 2010, Page(s):19 - 24
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (601 KB) | HTML iconHTML

    Taguchi method was used to analyze the experimental data in order to get the optimum average of silicide thickness in 45nm devices. The virtually fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS module. These two modules were used as design tools and helps to reduce design time and cost. In this pap... View full abstract»

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  • Reduced parasitic capacitances analysis of nanoscale vertical MOSFET

    Publication Year: 2010, Page(s):25 - 29
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1185 KB) | HTML iconHTML

    Quantitative comparison analysis was made between standard vertical MOSFET, vertical MOSFET with FILOX (Fillet Local Oxidation) and vertical MOSFET that combine ORI (Oblique Rotating Implantation) and FILOX technology. Due to a very thin gate oxide separated the gate track and source/drain electrode in standard vertical MOSFET, tremendous increase effects of gate-to-drain and gate-to-source parasi... View full abstract»

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  • Investigation of short channel immunity of fully depleted double gate MOS with vertical structure

    Publication Year: 2010, Page(s):30 - 33
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (832 KB) | HTML iconHTML

    The electrical performance of fully depleted double gate MOSFET devices with vertical structure feature were evaluated with the implementation of oblique rotating implantation (ORI) method for several silicon pillar thicknesses using virtual wafer tool. The difference in the subthreshold performance is well noticed, as well as the potentials across the channel for different geometries. The implica... View full abstract»

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  • Large-signal modeling of AlGaN/GaN HEMTs based on DC IV and S-parameter measurements

    Publication Year: 2010, Page(s):34 - 37
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (963 KB) | HTML iconHTML

    In this paper, a large-signal model for GaN HEMT transistors for designing RF power amplifiers is presented. This model is relatively easy to construct and implement in CAD software since it requires only DC and S-parameter measurements. The modeling procedure is applied to a 4-W packaged GaN-on-Si HEMT and the developed model is validated by comparing its large-signal simulation to measured data ... View full abstract»

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