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# IEEE Journal of Photovoltaics

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Displaying Results 1 - 25 of 53

Publication Year: 2013, Page(s):C1 - 1138
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• ### IEEE Journal of Photovoltaics publication information

Publication Year: 2013, Page(s): C2
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• ### Editorial Kudos to J-PV Reviewers

Publication Year: 2013, Page(s): 1139
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Thanks the reviewers for the IEEE Journal of Photovoltaics and directs readers to a website that contains a list of the men and women who have done a particularly good job as reviewers for the period between July 1, 2012 and June 30, 2013. View full abstract»

• ### Method for Improving the Stability of Gen 5 Silicon Thin-film Tandem Solar Cell

Publication Year: 2013, Page(s):1140 - 1143
Cited by:  Papers (1)
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For silicon thin-film solar cells, it is well known that one of the most important methods for preparing amorphous silicon doped with hydrogen having good stability against light-soaking degradation is by properly tuning the H2 dilution ratio in the intrinsic i-layer. However, it is difficult to improve the longevity of a Gen 5 silicon thin-film tandem module by manipulating the H2... View full abstract»

• ### Performance Analysis of Thin-Film Crystalline Silicon-on-Glass Solar Cells

Publication Year: 2013, Page(s):1144 - 1148
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Performance limits of a heterojunction thin-film crystalline silicon on a glass solar cell (SC) in a substrate configuration were analyzed using the computer simulation program “Advanced Semiconductor Analysis” from the Delft University of Technology. The role of light trapping, due to scattering at randomly rough interfaces, on the absorption in the individual layers of the SC was i... View full abstract»

• ### Role of i-aSi:H Layers in aSi:H/cSi Heterojunction Solar Cells

Publication Year: 2013, Page(s):1149 - 1155
Cited by:  Papers (9)
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The dependence of solar cell parameters on i-aSi:H (non- or lightly-doped hydrogenated amorphous silicon) layer thickness in an aSi:H/cSi (crystalline silicon) heterojunction solar cell was analyzed using numerical simulation. By considering the quantum confinement effect at interfaces between i-aSi:H and cSi, experimental data which had not been explained by simulation could be successfully inter... View full abstract»

• ### The Two Approaches of Surface-Texture Optimization in Thin-Film Silicon Solar Cells

Publication Year: 2013, Page(s):1156 - 1162
Cited by:  Papers (2)
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Textured interfaces in thin-film silicon solar cells can increase the photocurrent of the devices. However, the challenge is how to design textures (periodic or random) that could outperform the state-of-the-art random ones. Moreover, the textures should enable defect-less semiconductor layer growth, which has often been neglected in the past, resulting in the low open-circuit voltage and fill fac... View full abstract»

• ### Progress in Surface Passivation of Heavily Doped n-Type and p-Type Silicon by Plasma-Deposited AlO $_{bm x}$/SiN$_{bm x}$ Dielectric Stacks

Publication Year: 2013, Page(s):1163 - 1169
Cited by:  Papers (13)
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We report an outstanding level of surface passivation for both n+ and p+ silicon by AlOx/SiNx dielectric stacks deposited in an inline plasma-enhanced chemical vapor deposition (PECVD) reactor for a wide range of sheet resistances. Extremely low emitter saturation current densities (J0e) of 12 and 200 fA/cm2 are obtained on 165 and ... View full abstract»

• ### A Fill Factor Loss Analysis Method for Silicon Wafer Solar Cells

Publication Year: 2013, Page(s):1170 - 1177
Cited by:  Papers (32)
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The fill factor of silicon wafer solar cells is strongly influenced by recombination currents and ohmic resistances. A practical upper limit for the fill factor of crystalline silicon solar cells operating under low-level injection is set by recombination in the quasi-neutral bulk and at the two cell surfaces. Series resistance, shunt resistance, and additional recombination currents further lower... View full abstract»

• ### Development of Innovative Application Films for Silicon Solar Cells Using a Copper–Phosphorus Alloy by an Atmospheric Sintering Process

Publication Year: 2013, Page(s):1178 - 1183
Cited by:  Papers (2)
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In this paper we aim to develop copper (Cu)-based backside soldering tabs/pads for crystalline silicon (Si) solar cells using atmospheric sintering. In our previous study, we found that a Cu network can be formed in an application film (AF) by self-deoxidization when the AF consisting of copper-phosphorus (Cu-P) alloy paste is sintered in an atmospheric environment, and the Cu AF showed low electr... View full abstract»

• ### Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells

Publication Year: 2013, Page(s):1184 - 1191
Cited by:  Papers (106)
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Recently, several parameters relevant for modeling crystalline silicon solar cells were improved or revised, e.g., the international standard solar spectrum or properties of silicon such as the intrinsic recombination rate and the intrinsic carrier concentration. In this study, we analyzed the influence of these improved state-of-the-art parameters on the limiting efficiency for crystalline silico... View full abstract»

• ### Local Thermographic Efficiency Analysis of Multicrystalline and Cast-Mono Silicon Solar Cells

Publication Year: 2013, Page(s):1192 - 1199
Cited by:  Papers (3)
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Local dark current contributions of multicrystalline (mc) and cast-mono silicon (Si) solar cells were evaluated by using dark lock-in thermography (DLIT) measurements. The goal of these investigations was to evaluate the influence of the contact metallization on the efficiency. Both materials are treated by nearly the same solar cell process. Because of a special print design, the current density ... View full abstract»

• ### Uncertainty in Photoconductance Measurements of the Emitter Saturation Current

Publication Year: 2013, Page(s):1200 - 1207
Cited by:  Papers (2)
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We determine uncertainty in photoconductance (PC) measurements of the emitter saturation current density (J0e). A Monte Carlo method is used to calculate the impact of uncertainty from the input parameters including the test equipment calibration, the intrinsic-recombination model, and the measured sample's thickness, doping, and optics. The uncertainty in the measurement of J0e View full abstract»

• ### Cure Kinetics of Electrically Conductive Adhesives for Solar Cell Interconnection

Publication Year: 2013, Page(s):1208 - 1214
Cited by:  Papers (1)
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Electrically conductive adhesives (ECA) provide an alternative lead-free interconnection technology for crystalline silicon solar cells with lower thermomechanical stress than standard soldering. They show high potential for use in emerging cell concepts like metal-wrap-through (MWT) or heterojunction technology. Obviously, curing of ECA is a critical step along the interconnection process. Unders... View full abstract»

• ### Numerical Simulation and Modeling of Resistive and Recombination Losses in MWT Solar Cells

Publication Year: 2013, Page(s):1215 - 1221
Cited by:  Papers (8)
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This study analyzes the impact of resistive and recombination losses in metal wrap through (MWT) solar cells through technology computer aided design (TCAD) numerical simulations. Two types of MWT architectures are considered in this study: “point busbar,” featuring one circular tabbing contact for each via at the back side, and “continuous busbar,” in which the rear bu... View full abstract»

• ### Single-Component Damage-Etch Process for Improved Texturization of Monocrystalline Silicon Wafer Solar Cells

Publication Year: 2013, Page(s):1222 - 1228
Cited by:  Papers (2)
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A new saw damage-etch process based on a hot sodium hypochlorite (NaOCl) solution is reported here. This process performs simultaneous damage removal and oxide masking of raw c-Si wafers in a single step. NaOCl is a strong oxidizing agent, and during the NaOCl damage-etch process, the oxide grown remains present even after the completion of the process. This oxide layer acts as protective mask dur... View full abstract»

• ### On the Surface Passivation of Textured C-Si by PECVD Silicon Nitride

Publication Year: 2013, Page(s):1229 - 1235
Cited by:  Papers (5)
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We investigate the surface passivation of crystalline silicon (c-Si) wafers that are textured with random upright pyramids and passivated with amorphous silicon nitride (SiNx). Over a large range of refractive indices (n = 1.89-4.1 at 632 nm), we achieve a low upper limit to surface recombination velocity on textured samples (Seff,UL <; 10 cm s-1 at an excess ca... View full abstract»

• ### Co-Diffused Back-Contact Back-Junction Silicon Solar Cells without Gap Regions

Publication Year: 2013, Page(s):1236 - 1242
Cited by:  Papers (17)
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In this paper, first generation back-contact back-junction (BC-BJ) silicon solar cells with cell efficiencies well above η = 20% were fabricated. The process sequence is industrially feasible, requires only one high-temperature step (codiffusion), and relies only on industrially available pattering technologies. The silicon-doping is performed from pre-patterned solid diffusion sources, whi... View full abstract»

• ### Record Infrared Internal Quantum Efficiency in Silicon Heterojunction Solar Cells With Dielectric/Metal Rear Reflectors

Publication Year: 2013, Page(s):1243 - 1249
Cited by:  Papers (41)
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Inserting a dielectric between the absorber and rear metal electrode of a solar cell increases rear internal reflectance by both limiting the transmission cone and suppressing the plasmonic absorption of light arriving outside of the cone. We fabricate rear reflectors with low-refractive-index magnesium fluoride (MgF2) as the dielectric, and with local electrical contacts through the Mg... View full abstract»

• ### Impact of Impurities From Crucible and Coating on mc-Silicon Quality—the Example of Iron and Cobalt

Publication Year: 2013, Page(s):1250 - 1258
Cited by:  Papers (30)
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The aim of this paper is to analyze the limiting role of crucible and coating impurities on material quality of multicrystalline silicon. Both solid body diffusion and diffusion into the silicon melt are considered in this study. Two ingots of size G1 have been analyzed. One of them was crystallized in a standard crucible, whereas the other was crystallized in a quartz crucible of very high purity... View full abstract»

• ### Direct Laser Doping of Poly-Silicon Thin Films Via Laser Chemical Processing

Publication Year: 2013, Page(s):1259 - 1264
Cited by:  Papers (1)
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Laser chemical processing (LCP) is an attractive doping technique for thin films due to its process simplicity, high achievable doping concentrations, and relatively shallow doping depths. During LCP processing, an infinite supply of dopants is available from the pressurized doping medium. In this paper, LCP is employed for n-type doping of poly-silicon thin films on glass. We achieved a peak dopi... View full abstract»

• ### Studying Light-Induced Degradation by Lifetime Decay Analysis: Excellent Fit to Solution of Simple Second-Order Rate Equation

Publication Year: 2013, Page(s):1265 - 1270
Cited by:  Papers (11)
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Twenty different boron-doped Czochralski silicon materials have been analyzed for light-induced degradation. The carrier lifetime degradation was monitored by an automated quasi-steady-state photoconductance setup with an externally controlled bias lamp for in-situ illumination between measurements. Logarithmic plots of the time-resolved lifetime decays clearly displayed the previously reported ra... View full abstract»

• ### Simulation of Quantum Dot Solar Cells Including Carrier Intersubband Dynamics and Transport

Publication Year: 2013, Page(s):1271 - 1278
Cited by:  Papers (15)
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This paper presents a device-level model of quantum dot (QD) solar cells, coupling the classical drift-diffusion equations for transport of bulk carriers with a set of rate equations describing the QD carrier dynamics. The model is applied to carry out a detailed study of the impact of thermal-assisted processes on the electrical performance of InAs/GaAs QD solar cells (QDSCs), by exploiting exper... View full abstract»

• ### Optical Bandgap Tunability of Silicon Nanocrystals Fabricated by Inductively Coupled Plasma CVD for Next Generation Photovoltaics

Publication Year: 2013, Page(s):1279 - 1286
Cited by:  Papers (4)
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Superior optical properties of Si-nanocrystals (Si-NCs) compared with bulk Si, particularly tunability of bandgap by controlling size, can be exploited for realizing next-generation Si tandem solar cells. In view of this, optical bandgap tunability of Si-NCs fabricated by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPCVD) is presented. The SiOx<;2/SiO2 ... View full abstract»

• ### Analysis of Electronic Structures of Nitrogen δ-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells

Publication Year: 2013, Page(s):1287 - 1291
Cited by:  Papers (6)
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Nitrogen δ-doped GaAs superlattices (SLs) were fabricated, and their energy structures were investigated. A number of strong transition signals are observed in photoreflectane (PR) spectra in an energy range from 1.54 to 1.78 eV for SL samples in which any transitions are not observed in uniformly nitrogen-doped GaAsN with comparable nitrogen content. Both of the E+ and E- View full abstract»