Electron Device Letters, IEEE
Issue 6 • Date June 2013
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Displaying Results 1 - 25 of 43
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Table of contents
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PDF (163 KB)
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IEEE Electron Device Letters publication information
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PDF (149 KB)
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Changes to the Editorial Board
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PDF (233 KB)
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Novel Method for Fabrication of Tri-Gated Poly-Si Nanowire Field-Effect Transistors With Sublithographic Channel Dimensions
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PDF (456 KB)
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Origins of Effective Work Function Roll-Off Behavior for High-
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PDF (531 KB)
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EOT Scaling of
${rm TiO}_{2}/{rm Al}_{2}{rm O}_{3}$ |
PDF (575 KB)
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A Distributive-Transconductance Model for Border Traps in III–V/High-k MOS Capacitors
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PDF (318 KB)
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Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized
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PDF (841 KB)
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Gate-Recessed Integrated E/D GaN HEMT Technology With
$f_{T}/f_{rm max}>300~{rm GHz}$ |
PDF (1686 KB)
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0.2-
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PDF (321 KB)
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Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM
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PDF (530 KB)
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540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier
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PDF (502 KB)
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Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in
${rm TaO}_{x}$ |
PDF (500 KB)
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A Flexible IGZO Thin-Film Transistor With Stacked
${rm TiO}_{2}$ |
PDF (805 KB)
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Highly Reliable Multiple-Channel IGZO Thin-Film Transistors Employing Asymmetric Spacing and Channel Width
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PDF (351 KB)
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Surface Potential Calculation for Dynamic-Depletion Polysilicon TFTs With Both Gaussian and Exponential DOS Distribution
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PDF (613 KB)
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Improved Light Extraction Efficiency of a High-Power GaN-Based Light-Emitting Diode With a Three-Dimensional-Photonic Crystal (3-D-PhC) Backside Reflector
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PDF (1086 KB)
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Quantum-Dot-Based Mid-IR Single-Photon Detector With Self-Quenching and Self-Recovering Operation
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PDF (277 KB)
Aims & Scope
IEEE Electron Device Letters contains articles related to the theory, design, performance and reliability of electron devices.
Meet Our Editors
Editor-in-Chief
Yuan Taur
University of California at San Diego, ECE
