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Microwave Symposium Digest, 1983 IEEE MTT-S International

Date May 31 1983-June 3 1983

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Displaying Results 1 - 25 of 212
  • [Front cover - 1983 MWSYM]

    Publication Year: 1983, Page(s): f1
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  • [Front Inside cover]

    Publication Year: 1983, Page(s):fm1 - fm2
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  • Table of contents (1983 [MWSYM])

    Publication Year: 1983, Page(s):iii - xxv
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  • Welcome (1983 [MWSYM])

    Publication Year: 1983, Page(s):i - ii
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  • MTT-S Symposium [1983 MWSYM]

    Publication Year: 1983, Page(s): 1
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  • 1983 Symposium Steering Committee

    Publication Year: 1983, Page(s):2 - 5
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  • Technical Program Committee (1983 [MWSYM])

    Publication Year: 1983, Page(s):7 - 9
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  • Administrative Committee (1983 [MWSYM])

    Publication Year: 1983, Page(s):11 - 12
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  • Microwave Career Award (1983 [MWSYM])

    Publication Year: 1983, Page(s): 13
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  • Microwave Applications Award (1983 [MWSYM])

    Publication Year: 1983, Page(s): 14
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  • 1983 MTT-S Microwave Prize

    Publication Year: 1983, Page(s): 15
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  • Distinguished Service Award (1983 [MWSYM])

    Publication Year: 1983, Page(s): 16
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  • 1982 IEEE Fellows (1983 [MWSYM])

    Publication Year: 1983, Page(s): 17
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  • 1982/1983 MTT-S National Lecturer

    Publication Year: 1983, Page(s): 18
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  • Panel Session (1983 [MWSYM])

    Publication Year: 1983, Page(s):19 - 20
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  • Workshop Broadband Matching and Design of Microwave Amplifiers

    Publication Year: 1983, Page(s):21 - 27
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (373 KB)

    Lists workshops held at the conference proceedings. View full abstract»

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  • Technical Program (1983 [MWSYM])

    Publication Year: 1983, Page(s):29 - 36
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  • Session A - Monolithic Amplifiers [breaker page]

    Publication Year: 1983, Page(s): 39
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  • Broadband Monolithic Low-Noise Feedback Amplifiers

    Publication Year: 1983, Page(s):41 - 45
    Cited by:  Papers (2)  |  Patents (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (729 KB)

    A 0.6 to 6 GHz monolithic GaAs FET low-noise feedback amplifier has been developed. This amplifier chip has a gain of 6 dB and a noise figure of around 4 dB over the bandwidth. Gains of 8 dB have been-achieved at 1/2I /sub dss/ with 1 dB gain compression points of 21 dBm over the band. This paper discusses the design of such amplifiers using as an example a 1 to 10 GHz two stage monolithic amplifi... View full abstract»

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  • 2-6 GHz Monolithic Microwave Amplifier

    Publication Year: 1983, Page(s):46 - 49
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (378 KB)

    The design and results of a GaAs monolithic feedback amplifier are presented. The features stressed are its small size (0.76 mm square) and simple 5 mask process in order that the lowest possible cost per dB of gain may be achieved. Refinements to the CAD model, particularly with respect to inductors, are also presented. View full abstract»

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  • Wideband High Gain Small Size Monolithic GaAs FET Amplifiers

    Publication Year: 1983, Page(s):50 - 53
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (277 KB)

    A series of two to four stage monolithic amplifiers operating with a gain of 15 to 42 dB and covering the 0.1 to 2 till 4 GHz frequency band has been realized. A high density of integration has been achieved (active area of 0.2 mm²) as no decoupling capacitors nor inductance have been used. View full abstract»

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  • 12GHz-Band Low-Noise GaAs Monolithic Amplifiers

    Publication Year: 1983, Page(s):54 - 58
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (621 KB)

    One- and two-stage 12GHz-band low-noise GaAs monolithic amplifiers have been developed for use in direct broadcasting satellite receivers. The one-stage amplifier provides a less than 2.5dB noise figure with more than 9.5db associated gain in the 11.7 to 12.7GHz band. In the same frequency band, the two-stage amplifier has a less than 2.8dB noise figure with more than 16dB associated gain. A 0.5 &... View full abstract»

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  • GaAs Monolithic MICs for Direct Broadcast Satellite Receivers

    Publication Year: 1983, Page(s):59 - 64
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (864 KB)

    A 12-GHz low-noise amplifier (LNA), a 1-GHz IF amplifier (IFA) and an 11-GHz dielectric resonator oscillator (DRO) have been developed for DBS home receiver a placations by using GaAs MMIC (monolithic MIC) technology. Each MMIC chip contains FETs as active elements and self-biasing source resistors and bypass capacitors for single power supply operation. It also contains DC-block and RF-bypass cap... View full abstract»

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  • Miniaturisation of a Band-X Monolithic GaAs Amplifier

    Publication Year: 1983, Page(s):65 - 68
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (499 KB)

    Reducing the area occupied by microwave monolithic integrated circuits is a necessity to decrease the cost of these circuits. A reduction in area can be obtained with circuit configurations comprising a minimum of inductances and by using spiral inductors. When a circuit is compacted, the coupling between radiating elements such as the inductances has also to be taken into account. An amplifier wo... View full abstract»

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  • GaAs Monolithic Lumped Element Multistage Microwave Amplifier

    Publication Year: 1983, Page(s):69 - 73
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (505 KB)

    This paper reports on the successful development of a four stage, directly cascaded GaAs FET monolithic preamplifier chip realized using truly lumped elements for both RF and DC circuitry. The chip is designed to be entirely self-biased and contains all required DC circuitry on-chip for operation from a single drain supply. The design is based on a nominal 1 micron gate length interdigital FET geo... View full abstract»

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