By Topic

Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European

Date 21-24 Sept. 1976

Filter Results

Displaying Results 1 - 25 of 68
  • [Covers]

    Publication Year: 1976, Page(s): 1
    Request permission for commercial reuse | PDF file iconPDF (1019 KB)
    Freely Available from IEEE
  • 2nd European Solid State Circuits Conference

    Publication Year: 1976, Page(s): 1
    Request permission for commercial reuse | PDF file iconPDF (24 KB)
    Freely Available from IEEE
  • Cosponsors

    Publication Year: 1976, Page(s): 1
    Request permission for commercial reuse | PDF file iconPDF (78 KB)
    Freely Available from IEEE
  • Professional and Financial Contributions

    Publication Year: 1976, Page(s): 1
    Request permission for commercial reuse | PDF file iconPDF (78 KB)
    Freely Available from IEEE
  • Steering Committee

    Publication Year: 1976, Page(s): 1
    Request permission for commercial reuse | PDF file iconPDF (46 KB)
    Freely Available from IEEE
  • Programme Committee

    Publication Year: 1976, Page(s): 1
    Request permission for commercial reuse | PDF file iconPDF (46 KB)
    Freely Available from IEEE
  • Table of contents

    Publication Year: 1976, Page(s):1 - 6
    Request permission for commercial reuse | PDF file iconPDF (366 KB)
    Freely Available from IEEE
  • Invited Papers

    Publication Year: 1976, Page(s): I
    Request permission for commercial reuse | PDF file iconPDF (9 KB)
    Freely Available from IEEE
  • LSI in Watches

    Publication Year: 1976, Page(s):II - III
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (289 KB)

    After a brief excursion into history, the present state of the art in wrist- watch LSI circuits will be reviewed. Future development will then be predicted on the basis of presently available advanced products. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Semiconductor Technologies with Reduced Dimensions

    Publication Year: 1976, Page(s):IV - V
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (198 KB)

    In the last years the complexity of integrated circuits has grown exponentially. This growth has been achieved primarily by increasing the chip area, by reducing the linewidths, and last but not least by improving devices and circuits. This paper deals with the methods and problems associated with linewidth reduction. It is the aim of the paper to present to the circuit engineer simplified models ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • From Where to Where in Logic Arrays

    Publication Year: 1976, Page(s): VII
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (97 KB)

    With the advent of integrated circuits, regular structures appeared more reasonable in cost, and many different approaches to doing logic with arrays were investigated. Notable among these were investigations into associative (content addressable) memories and cellular arrays. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Present and Future of Bipolar Technologies

    Publication Year: 1976, Page(s):VIII - IX
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (330 KB)

    Bipolar Integrated Circuits, in common with almost every brand of microelectronics, is evolving at a pace that would be considered revolutionary in just about every other area of technology. The importance that computers, communications and defence systems have in our society, the new market opportunities that become available due to integrated circuits advances and the healthy competition between... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Advanced MOSFET technologies: A review

    Publication Year: 1976, Page(s):X - XI
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (187 KB)

    One of the main reasons for developing MOSFET technologies in the sixties has been the relative simplicity of the process leading to a lower cost per gate and allowing entrance to the medium scale level of integration (MSI). The first technology to enter high volume production has been the aluminium gate P channel MOSFET technology followed by the silicon gate process.. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Silicon on Sapphire technology

    Publication Year: 1976, Page(s):XII - XIII
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (134 KB)

    Recent advance in silicon on sapphire technology (SOS) is quite significant, and several applications of SOS devices have been already practically realized as a 1024 bit CMOS/SOS random access memory, a programmable logic array, a nonvolatile memory etc. The primary difficulties of the SOS structure, such as obtaining the epitaxial silicon films with acceptable electrical characteristics and with ... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • High Speed GaAs Circuits

    Publication Year: 1976, Page(s):XIV - XV
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (182 KB)

    If GaAs MESFET's are the basic devices for GaAs IC's,it is also discussed that the possibility to make all other types of devices on a semi-insulating substrate, and also the possibility to use an "ideal" heterojunction with large gap material. In addition GaAs offers some specific properties : Gunn effect, luminescence and acoustoelectric effects and can imagine circuits with unusual characterist... View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Contributed Papers

    Publication Year: 1976, Page(s): 5
    Request permission for commercial reuse | PDF file iconPDF (9 KB)
    Freely Available from IEEE
  • High Density Monolithic Bipolar and MOS Crosspoint Arrays for Private Branch Telephone Exchanges

    Publication Year: 1976, Page(s):6 - 7
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1150 KB)

    The introduction of an N-channel silicon-gate process and an I2L process has significantly improved existing monolithic semiconductor crosspoint arrays with respect to the ON resistance, the OFF attenuation, and the required chip area. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • An I2L Two-Tone Dialling Circuit for Telephony

    Publication Year: 1976, Page(s):8 - 9
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (202 KB)

    The specifications of this circuit are very well fitted to the characteristics of I2L low voltage and current operation, compatibility with other logics and linear, stand by mode, high packing density. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Integrable Electronic Gyrators with High Efficiency

    Publication Year: 1976, Page(s):10 - 11
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (224 KB)

    For gyrator applications where higher power capability is needed it is necessary to enhance efficiency over that of presently available circuits which is around 1 percent. Methods to improve efficiency are shown and experimental results are discussed. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • New Analog CMOS IC'S Based on Weak Inversion Operation

    Publication Year: 1976, Page(s):12 - 13
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (285 KB)

    The behavior of MOS transistors in weak inversion suggests new interesting analog circuits; CMOS compatible current reference, amplitude detector, very low power quartz oscillator and bandpass amplifier are described. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A Low Drift MOSFET Operational Amplifier A R Z

    Publication Year: 1976, Page(s):14 - 15
    Cited by:  Papers (2)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (137 KB)

    A R Z is an operational amplifier with very low drift, built in standard MOSFET technology. Input offset voltages less than 3 μvolts and drift values of this offset voltage less than 0.05 μvolt/°C are measured. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A Differential MOS-Bipolar Voltage Buffer with Virtually Zero Input Capacitance

    Publication Year: 1976, Page(s):16 - 17
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (747 KB)

    A new single stage MOS-Bipolar differential amplifier has 60 dB open loop gain, over 10 MHz unity gain bandwidth, input capacitance below 0.1 pF and less than 200 nV/ √HZ noise. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • A New Circuit Technique in Voltage and Temperature Compensated Emitter-Coupled Logic

    Publication Year: 1976, Page(s):18 - 19
    Cited by:  Papers (1)  |  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (263 KB)

    Starting with well-known methods of voltage and temperature compensated circuits a new area saving circuit design with good compensation results is presented. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Digital Tuning of Television Receivers using Nonvolatile Memory

    Publication Year: 1976, Page(s):20 - 21
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (214 KB)

    A new system for tuning TV receivers using the principle of frequency synthesis has been developed. In its IC form, the system consists of four chips using the UHF bipolar, MOS and MNOS process techniques. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.
  • Monolithic Nullor

    Publication Year: 1976, Page(s):22 - 23
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (198 KB)

    The design of a monolithic integrated nullor is presented. It is a universal amplifier building block with a large internal gain and a floating input port and moreover a floating output port. View full abstract»

    Full text access may be available. Click article title to sign in or learn about subscription options.