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Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European

Date 25-27 Sept. 1995

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  • [Front cover]

    Publication Year: 1995, Page(s): 1
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  • Copyright page

    Publication Year: 1995, Page(s): 1
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  • Proceedings of the 25th European Solid State Device Research Conference

    Publication Year: 1995, Page(s): 1
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  • Foreword

    Publication Year: 1995, Page(s):v - vi
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  • Venues 1971-1996

    Publication Year: 1995, Page(s): vii
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  • Committees

    Publication Year: 1995, Page(s): viii
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  • International Scientific Programme Committee

    Publication Year: 1995, Page(s):ix - xii
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  • Sponsors

    Publication Year: 1995, Page(s): xiii
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  • Timetable

    Publication Year: 1995
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  • Technical Contents

    Publication Year: 1995
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  • Advanced Technology Challenges for High-Performance Microprocessor Applications

    Publication Year: 1995, Page(s): 3
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (70 KB)

    First Page of the Article
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  • Interconnects for ULSI: State of the Art and Future Trends

    Publication Year: 1995, Page(s):5 - 14
    Cited by:  Patents (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (2185 KB)

    State of the art 0.35 ¿m generation makes to a large extent use of basic steps developed in previous 0.5 ¿m generation: Physical Vapor Deposition (PVD) for adhesion/barrier layers and Al interconnects, Chemical Vapor Deposition (CVD) W for contacts and vias; on the other hand, for interlevel dielectric, it tends to use new High Density Plasma (HDP) deposition with improved gap-filling capability... View full abstract»

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  • Integrated Microsystems: Device and Technology Challenges

    Publication Year: 1995, Page(s):15 - 24
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (4077 KB)

    Integrated sensors have become increasingly important over the last few years in efforts to extend microelectronic-based signal processing and control into a broad range of new areas, including industrial automation, automotive systems, biomedicine, and environmental monitoring. Such devices are evolving from simple silicon transducers into sophisticated integrated microsystems containing sensors,... View full abstract»

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  • Technologies for the Multimedia City

    Publication Year: 1995, Page(s):25 - 36
    Cited by:  Patents (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (974 KB)

    In this era of technological abundance everything is technically feasible, but the wide spread acceptance of the technologies for multimedia applications relies on the concurrent and coherent development of all the underlying technologies and the services, infrastructures. Personal Computers (PCs) have emerged as the multimedia engines of the 90's, closely followed by set-top boxes, game consoles,... View full abstract»

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  • The State of the Art and Future Trends in DRAMs

    Publication Year: 1995, Page(s):37 - 44
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (3914 KB)

    The production of future generation DRAM devices critically requires R&D of process technologies for highly integrable and cost effective processes. Also, in order to support the ever-increasing requirements for high performance operation, the future DRAM products should be equipped with the capabilities of low voltage operation and high speed, too. This paper presents overview of process ... View full abstract»

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  • Very-High-Speed Si and SiGe Bipolar ICs

    Publication Year: 1995, Page(s):45 - 56
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1193 KB)

    The state-of-the-art for Si based bipolar ICs with respect to maximum operating speed is presented for both the production and laboratory state. Technologies, circuit principles, and design methods successfully used for the development of 10 to 50 Gb/s circuits are discussed. Substantial speed improvements are expected within the next couple of years, assuming the performance potential of SiGe HBT... View full abstract»

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  • On the Optimisation of SiGe-Base Bipolar Transistors

    Publication Year: 1995, Page(s):59 - 62
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (336 KB)

    Extensive computer simulations of NPN SiGe-base bipolar transistors were performed to examine the effect of the Ge profile in the electrical characteristics. It is shown that extra charge storage in the emitter-base (E-B) junction, caused by the Ge profile, affects the device performance considerably. In addition, it is shown that an abrupt Ge profile in the middle of the base region is optimal fo... View full abstract»

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  • Extension of the collector charge description for compact bipolar epilayer models

    Publication Year: 1995, Page(s):63 - 66
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (277 KB)

    In this paper an extension to the collector charge description for compact bipolar epilayer models is presented. With the aid of this extension, monotonic fT and Early voltage behavior is ensured when transistor operation extends into the quasi saturation region. The modification leads to a major improvement in the modelling of signal distortion at high current levels and high frequenci... View full abstract»

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  • Optimization of a Novel Split Current Hall Device by Numeric Modeling

    Publication Year: 1995, Page(s):67 - 70
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1579 KB)

    We report the modeling and optimization of a novel split current Hall device. A unique advantage of the device is the reduction of the common mode sensor signal while the absolute sensitivity is kept. This is achieved by an additional current terminal. Numeric modeling with our finite element package SOLIDIS allows to separate the influence of the geometry and that of material properties on the se... View full abstract»

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  • A Dynamic Model of Gold/Platinum Doped Devices

    Publication Year: 1995, Page(s):71 - 74
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (686 KB)

    Deep impurities like gold or platinum are extensively used in semiconductor technology to improve the switching characteristics of the devices by decreasing the carrier lifetimes. This, on the other hand, has the undesired effect of increasing the material resistivity. Here a complete model is presented, describing the effects of gold/platinum doping on both the steady-state and transient characte... View full abstract»

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  • Analysis and Characterization of Polycrystalline Silicon Thin-Film Transistors

    Publication Year: 1995, Page(s):75 - 78
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (782 KB)

    Polycrystalline silicon thin-film transistors (Poly-TFTs) are getting more and more attractive for future, active-matrix, flat-panel displays (AMFPDs) and, more generally, for large-area electronic products. This is due to the relatively-large carrier mobility in polycrystalline silicon, which typically exceeds the amorphous-silicon mobility by two orders of magnitude and makes this material suita... View full abstract»

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  • New Optimization Strategy Combining Response Surface Model and Levenberg-Marquardt Methodes for Various Optimization Purposes

    Publication Year: 1995, Page(s):79 - 82
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (392 KB)

    In this article we propose to use a combination of two optimization strategies, the Response Surface Model (RSM) method and the Levenberg-Marquardt (LM) method, for various optimization purposes in IC-technology. It is argued that both optimization techniques can be used complementary, combining the strenghts of both techniques while avoiding their weaknesses. As an illustration we apply this stra... View full abstract»

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  • MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices

    Publication Year: 1995, Page(s):83 - 86
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1050 KB)

    MINIMOS-NT, a generic device simulator is presented. This simulator is capable of dealing with complex device geometries as well as with several physical models represented by certain sets of partial differential equations. A description of the structure of the simulator is given, which shows the basic idea of splitting the device geometry in distinct regions. Within these ``segments'', arbitrary ... View full abstract»

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  • BCD Technologies for VLSI Smart Power ICs

    Publication Year: 1995, Page(s):89 - 92
    Cited by:  Papers (5)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (827 KB)

    This paper describes a smart power bipolar-CMOS-DMOS (BCD) technology called BCD III designed at 1.2¿ for single chip system integration. This technology, besides providing bipolar, CMOS and DMOS functions, offers the possibility to implement on the same chip EPROM and EEPROM non-volatile memories. A practical example of a complete system realized in a single chip solution using BCD III is also r... View full abstract»

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  • Low Power Consumption DC-18 GHz Internally Matched Amplifier using Si/SiGe HBTs

    Publication Year: 1995, Page(s):93 - 96
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (957 KB)

    Very wideband amplifiers with low input and output reflection coefficients are important building blocks for applications ranging from high-bitrate fiberoptic communication systems to advanced radar. Low power consumption, small chip area and low manufacturing cost become priority issues for battery-operated mobile devices and large market volume systems. Si/SiGe HBTs with highly doped base layers... View full abstract»

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