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# Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European

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Displaying Results 1 - 25 of 242
• ### [Front cover]

Publication Year: 1996, Page(s): 1
| PDF (13 KB)

Publication Year: 1996, Page(s): 1
| PDF (25 KB)
• ### Proceedings of the 26th European Solid State Device Research Conference

Publication Year: 1996, Page(s): 1
| PDF (21 KB)
• ### Foreword

Publication Year: 1996, Page(s):v - vi
| PDF (161 KB)
• ### Venues 1971-1997

Publication Year: 1996, Page(s): vii
| PDF (52 KB)
• ### Committees

Publication Year: 1996, Page(s): viii
| PDF (29 KB)
• ### Scientific Programme Committees

Publication Year: 1996, Page(s):ix - x
| PDF (131 KB)

Publication Year: 1996, Page(s): xi
| PDF (19 KB)
• ### Sessions

Publication Year: 1996, Page(s):xii - xv
| PDF (174 KB)
• ### Technical Contents

Publication Year: 1996
| PDF (1361 KB)
• ### Challenges of Innovation in Microelectronics and Cooperation of Industrial and Nonindustrial R&D

Publication Year: 1996, Page(s):3 - 22
| | PDF (2198 KB)

Microelectronics will keep on growing with the same pace as in the past at least for the next 15 years. This implies enormous challenges in technics, economy and education. Simultaneously it opens up huge chances for semiconductor and application industries. The progress of microelectronics leads to an exponential growth of artificial intelligence''. This will help solving the serious challenges... View full abstract»

• ### Micro- and Opto-Electronics Technologies towards Multimedia Era

Publication Year: 1996, Page(s):23 - 30
| | PDF (2803 KB)

What's Multimedia? Without a clean answer, industries are running towards the virtual target and looking for business chance. However, we have to recognize that a lot of changes have happened if we look back a year ago. Wireless access systems as well as wired access, WDM (Wavelength Division Multiplex) photonic networking, low power consumption technology, low cost Optical Network Unit (ONU), whi... View full abstract»

• ### Passivation of Ag on SiO2 by Annealing Ag-Ti Alloys in an Ammonia Ambient

Publication Year: 1996, Page(s):31 - 38
| | PDF (504 KB)

Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in a flowing NH3 ambient at temperatures between 400-700Â°C for various times. Upon annealing at temperatures Â¿ 350Â°C Ti segregates to the surface and alloy/SiO2 interface. At the free surface Ti reacts with the ammonia to form a TiN(O) surface layer. The Ti that diffuses to ... View full abstract»

• ### Future Development in Electronic Systems is Impacted Both by Semiconductor Technology and IC Assembly Techniques

Publication Year: 1996, Page(s):39 - 44
| | PDF (1796 KB)

As integrated circuit processing technology progresses to deep submicron lithographies, designers increasingly adopt superintegrated approaches where several complex functions are combined on one die. At the same time, however, designers are now faced with choices in the approach to packaging: mixed IC technology and multichip packaging. This paper reviews these trends, presenting typical integrat... View full abstract»

• ### Recent advances and future trends of ULSI technologies

Publication Year: 1996, Page(s):45 - 52
Cited by:  Papers (2)
| | PDF (2408 KB)

In recent few years, significant progress has been seen in the study of 0.1 and sub-0.1 micron gate length MOSFETs. In this paper, recent advance in the small-geometry MOSFETs is described and the limit of MOSFET downsizing is predicted. Then, a concept of future ULSI in 2010's is discussed. View full abstract»

• ### Quantum Cascade Lasers: New Light Sources for the Mid-to-Far-Infrared

Publication Year: 1996, Page(s):53 - 62
| | PDF (1040 KB)

Quantum cascade lasers are new unipolar light sources based on electron resonant tunneling and optical transitions between quantized conduction band states. Quantum engineering of the electronic energy levels, wavefunctions, matrix elements and scattering rates is used to design population inversion and optimize laser gain and overall performance. Their wavelength can be selected over a broad rang... View full abstract»

• ### Hot-Carrier Reliability of S4D n-MOSFETs

Publication Year: 1996, Page(s):65 - 68
Cited by:  Papers (2)
| | PDF (1422 KB)

The hot-carrier reliability of S4D MOSFETs was investigated for the first time. The S4D structure offers a large improvement in current degradation as compared with the LDD structure, despite the greater current driving-ability. We estimate that a 0.2 Â¿m gate length S4D n-MOSFET will operate with good hot-carrier reliability for more than 10 years at a supply volt... View full abstract»

• ### Effect of Nitride Sidewall Spacer on Hot Carrier Reliability Characteristics of MOSFET's

Publication Year: 1996, Page(s):69 - 72
| | PDF (344 KB)

In this paper, we have compared the reliability characteristics of MOSFET with nitride sidewall and oxide sidewall spacer. We found that the unique reliability characteristics of nitride sidewall spacer device. At the initial stage of stress, large degradation of drain current occurs for nitride sidewall device at low stress drain bias due to the enhanced trapping of nitride spacer. However, nitri... View full abstract»

• ### A New Charge Pumping Method for Studying the Si-SiO2 Interface

Publication Year: 1996, Page(s):73 - 76
| | PDF (291 KB)

It is shown that, by varying the frequency of the gate signal in charge pumping measurements, the in-depth concentration profile of the traps from the slow to the fast interface traps, can be obtained. A simple model for the extraction of the trap density is derived. Depth trap concentration profiles are recorded from virgin and stressed devices. For the virgin device, the trap concentration in th... View full abstract»

• ### The Influence of Impurity Scattering in Highly Doped SOI-MOSFETs

Publication Year: 1996, Page(s):79 - 82
| | PDF (370 KB)

The relationship between the most commonly used empirical and physical mobility models is investigated. The parameters of the empirical model are given as a function of those of the physical model. Based on these relations, it will be shown that the three empirical mobility parameters ¿¿0, ¿¿1 and ¿¿2 are influenced by impurity scattering which increases with the doping conce... View full abstract»

• ### Influence of the Silicon Thickness on the Reverse Short Channel Effect in SOI MOSFETs

Publication Year: 1996, Page(s):83 - 86
| | PDF (375 KB)

This paper presents experimental results on the variation of the threshold voltage roll-on with shrinking the channel length of Silicon-on-Insulator NMOSFETs, as a function of the silicon overlayer thickness. It is found that the Reverse-Short-Channel-Effect (RCSE) is reduced as the silicon thickness decreases. These results are first explained assuming silicon interstitial recombination at the bu... View full abstract»

• ### Impact of Latch Phenomenon on Low Frequency Noise in SOI MOSFETs

Publication Year: 1996, Page(s):87 - 90
| | PDF (324 KB)

The low frequency noise in fully (FD) and partially (PD) depleted MOSFETs/SOI is experimentally investigated for various channel lengths and drain voltages. The origin of the noise is discussed in order to understand the physical mechanisms involved in this type of noise. Furthermore, the influence of the latch effect on low frequency noise is analysed. It is found that the flicker noise is essent... View full abstract»

• ### Advanced Ti Salicide Process for Sub-0.2 μm CMOS

Publication Year: 1996, Page(s):93 - 96
| | PDF (1154 KB)

Because of the reduction of gate length and junction depth, we confirm that conventional TiSi2 formed by a 2-step RTA on sputtered Ti cannot be used for sub-0.35 μm. We have investigated new techniques using selective Si-epitaxy before sputtering Ti, and a more advanced technique that makes use of direct selective TiSi2 CVD deposition on gate and S/D. We show that these techniques provide ... View full abstract»

• ### Interconnects Integration for 0.25μm CMOS Technology

Publication Year: 1996, Page(s):97 - 100
Cited by:  Papers (1)  |  Patents (1)
| | PDF (1375 KB)

This paper presents the complete integration of a triple level metallisation (TLM) interconnection processes for a 0.25μm CMOS technology on 200 mm wafers. Advanced processes such High Density Plasma (HDP) deposition for phosphorus doped premetal oxide and for undoped silicon glass as inter metal dielectric (IMD), DUV lithography for all levels, collimated TiN barrier deposition, HDP etchi... View full abstract»

• ### Low Dielectric Constant Spin-on-Polymers for Interlayer Dielectric Applications

Publication Year: 1996, Page(s):101 - 104
| | PDF (644 KB)

This paper will present the characterization results of two low dielectric constant methylsilsesquioxane spin-on polymers and a conventional siloxane SOG. The chemical bonding structure, thermal stability, stress-temperature variations and the leakage current will be examined. View full abstract»