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Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual

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Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual

Date 25-28 Oct. 2009

Proceedings Available

Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual

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[Front matter]

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Table of contents

Electrical characterization and modeling of Phase Change Memory arrays

Evidence of erratic behaviors in p-channel floating gate memories and a cell architectural solution

Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories

Electrical analysis of unbalanced Flash memory array construction effects and their impact on performance and reliability

Cycling impact on the Gm degradation and GIDL current of 65nm 2T-embedded Flash memory

A full 2D and 3D TCAD simulation of ultimate 22nm NAND Flash memories

Dependence of program and erase speed on bias conditions for fully depleted channel of vertical NAND flash memory devices

Modeling of the self-heating in STTRAM and analysis of its impact on reliable memory operations

Reliability characterization of Phase Change Memory

Contact resistance of TiW to Phase Change Material in the amorphous and crystalline states

White spots on a characterization map for the phase-change memory (PCM) and threshold switches

Satellite test of radiation impact on Ramtron 512K FRAM

Electrical characterization of resistive memory in metal-Pr0.7Ca0.3MnO3 interface: A future non-volatile memory device

Impact of hydrogen on the electroforming of Pr0.7Ca0.3MnO3 resistance-change memory devices

Measurement of anisotropy in the thermal conductivity of Ge2Sb2Te5 films

Reliability issues of using barrier-engineered (BE) tunneling dielectric for floating gate flash memories

Author index

Resistive switching in TiN/HfO₂/Ti/TiN MIM devices for future nonvolatile memory applications

Influence of interfaces on the crystallization characteristics of Ge₂Sb₂Te₅

Density functional study of Ag in Ge₂Se₃

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