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Advanced Developments in Microelectronic Engineering (Digest No: 1996/235), IEE Colloquium on

Date 15 Nov 1996

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Displaying Results 1 - 6 of 6
  • Ultra high speed sub-micron gallium arsenide VLSI

    Publication Year: 1996 , Page(s): 4/1 - 4/5
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (304 KB)  

    Over the past few years there has been a steady progress in the development of digital GaAs technologies providing VLSI complexity to the high speed system designers. The improvements in the fabrication process have resulted in the emergence of over one million transistor GaAs technologies to support ultra high speed data rates. The purpose of this paper is to show the current state of the technology for high speed data and telecommunication circuits requiring VLSI complexity. The issues covered are the Logic gate design and impact of algorithm on performance. An adder circuit configuration is also presented to give an indication of the speed and power dissipation at higher levels of integration View full abstract»

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  • Multilayer techniques for MMICs

    Publication Year: 1996 , Page(s): 6/1 - 6/5
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (348 KB)  

    MMICs still use large numbers of passive components, both lumped elements (spiral inductors and overlay capacitors) and transmission lines and couplers. The area consumed by these can be drastically reduced by the use of multilayer techniques. However, producing MMICs with 3 or more metal layers requires research into the fabrication techniques as well as investigating the modelling and design problems. This paper describes these multilayer techniques which are expected to facilitate an increase in the packing density of commercially fabricated MMICs in the future View full abstract»

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  • VLSI design techniques in teaching and research

    Publication Year: 1996 , Page(s): 8/1 - 8/6
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (496 KB)  

    Digital design methods and practice have undergone some notable changes in recent years. Reliance upon traditional circuit design methods, such as schematic capture, has given way to the new approach of VHDL and logic synthesis. Most recently of all, one has witnessed the arrival of CASE-tool methodology for logic design, which integrates formalised schematic models with VHDL and synthesisable circuit descriptions. In academia, access to such tools tends to lag slightly behind the latest developments, but nonetheless, the opportunity to expose undergraduates to such leading-edge design methods is one that is both challenging and rewarding. At the University of Teesside, the Division of Electronic and Computer Engineering has applied new digital design tools in the domains of research, and teaching with successful results. In research we have applied VHDL and logic synthesis to the investigation and implementation of a 32-bit stack-oriented microprocessor architecture, and investigated the feasibility of neural implementations in silicon. Practising our philosophy of fuelling teaching content from research activities, we have introduced VHDL as part of the 2nd and final year honours degree curriculum, and present students with the task of developing a simple microprocessor core in VHDL, which they then synthesise with various process technologies and optimisation parameters. In this paper the authors present an informal review of VLSI design techniques applied in research, and how this has been integrated with teaching within their division. The intention is to give a view of what may be achieved in an academic setting and how postgraduate research has benefited the undergraduate learning experience View full abstract»

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  • Submicron HEMT technology

    Publication Year: 1996 , Page(s): 2/1 - 2/5
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    This presentation is concerned with devices and circuits based on GaAs substrates. MESFETs, HEMTs and pseudomorphic HEMTs are promising candidates for large scale integration at very high frequencies of operation View full abstract»

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  • Fabrication, physics and applications of single electron devices

    Publication Year: 1996 , Page(s): 1/1 - 1/5
    Save to Project icon | Click to expandQuick Abstract | PDF file iconPDF (396 KB)  

    The precise control of electrons can be achieved with the Coulomb blockade effect. This effect has been known for some time but its importance has increased recently because Likharev et al. (1987-8) have advocated the use of the effect to make single electron devices and several research laboratories have demonstrated that the technology is available for making structures that are small enough for the Coulomb blockade to be used for devices View full abstract»

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  • Advanced Developments In Microelectronic Engineering- Programme

    Publication Year: 1996 , Page(s): 0_5
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