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IEE Colloquium on Advanced Developments in Microelectronic Engineering (Digest No: 1996/235)

15 Nov 1996

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Displaying Results 1 - 6 of 6
  • Ultra high speed sub-micron gallium arsenide VLSI

    Publication Year: 1996, Page(s):4/1 - 4/5
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (304 KB)

    Over the past few years there has been a steady progress in the development of digital GaAs technologies providing VLSI complexity to the high speed system designers. The improvements in the fabrication process have resulted in the emergence of over one million transistor GaAs technologies to support ultra high speed data rates. The purpose of this paper is to show the current state of the technol... View full abstract»

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  • Submicron HEMT technology

    Publication Year: 1996, Page(s):2/1 - 2/5
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (300 KB)

    This presentation is concerned with devices and circuits based on GaAs substrates. MESFETs, HEMTs and pseudomorphic HEMTs are promising candidates for large scale integration at very high frequencies of operation View full abstract»

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  • VLSI design techniques in teaching and research

    Publication Year: 1996, Page(s):8/1 - 8/6
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (496 KB)

    Digital design methods and practice have undergone some notable changes in recent years. Reliance upon traditional circuit design methods, such as schematic capture, has given way to the new approach of VHDL and logic synthesis. Most recently of all, one has witnessed the arrival of CASE-tool methodology for logic design, which integrates formalised schematic models with VHDL and synthesisable cir... View full abstract»

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  • Fabrication, physics and applications of single electron devices

    Publication Year: 1996, Page(s):1/1 - 1/5
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (396 KB)

    The precise control of electrons can be achieved with the Coulomb blockade effect. This effect has been known for some time but its importance has increased recently because Likharev et al. (1987-8) have advocated the use of the effect to make single electron devices and several research laboratories have demonstrated that the technology is available for making structures that are small enough for... View full abstract»

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  • Multilayer techniques for MMICs

    Publication Year: 1996, Page(s):6/1 - 6/5
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (348 KB)

    MMICs still use large numbers of passive components, both lumped elements (spiral inductors and overlay capacitors) and transmission lines and couplers. The area consumed by these can be drastically reduced by the use of multilayer techniques. However, producing MMICs with 3 or more metal layers requires research into the fabrication techniques as well as investigating the modelling and design pro... View full abstract»

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  • Advanced Developments In Microelectronic Engineering- Programme

    Publication Year: 1996, Page(s): 0_5
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (44 KB)

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