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Advanced Optoelectronic Materials and Devices, 2008. AOMD 2008. 2nd National Workshop on

Date 22-24 Dec. 2008

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  • [Covers]

    Publication Year: 2008, Page(s):c1 - c4
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  • [Title page]

    Publication Year: 2008, Page(s): iii
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    Publication Year: 2008, Page(s): iv
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    Publication Year: 2008, Page(s): v
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    Publication Year: 2008, Page(s): vi
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    Publication Year: 2008, Page(s): vii
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    Publication Year: 2008, Page(s): viii
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    Publication Year: 2008, Page(s): ix
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    Publication Year: 2008, Page(s): x
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  • Preface

    Publication Year: 2008, Page(s): xi
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    Publication Year: 2008, Page(s): xii
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  • Contents

    Publication Year: 2008, Page(s):xiii - xv
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    Publication Year: 2008, Page(s): xvi
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  • Wavelength tailorable, detectors: Ultraviolet to far-infrared

    Publication Year: 2008, Page(s):1 - 18
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (5113 KB) | HTML iconHTML

    Photon detectors responding in UV to-IR including free carrier based homo- and hetero junction interfacial workfunction internal photoemission (HIWIP/HEIWIP) detectors, split-off band detectors, quantum dot infrared photodetectors (QDIPs), and colloidal quantum dot (CQD) detectors are discussed. HIWIP and HEIWIP detectors were focused to develop far-infrared (or terahertz) and dual-band detectors,... View full abstract»

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  • Organic opto-electronics: Present status and future prospects

    Publication Year: 2008, Page(s):19 - 27
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1799 KB) | HTML iconHTML

    In recent years, organic semiconductors have been studied extensively because of their potential applications in light emitting diodes, field effect transistors, memory devices and solar cells. Attractive characteristics of organic semiconductors include low temperature processing, mechanical flexibility, low cost and light weight. Already products based on active thin-film organic devices are in ... View full abstract»

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  • Formation of SiC nanostructures on Si surface using C60 by spinning technique

    Publication Year: 2008, Page(s):28 - 35
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (5702 KB) | HTML iconHTML

    SiC nanocrystals growth through the surface reaction between spin-on C60 dissolved in Carbon Disulphide (CS2) and Si substrate and 800degC (100 rains.) annealed has been investigated. Scanning Electron and Atomic Force Microscopy showed the crests of C60 clusters formed preferentially on the Si substrate steps with 40-60 nm cluster sizes. Silicon carbide nanocrystallite formation after anneal. has... View full abstract»

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  • PVA/STA composite polymer electrolyte membranes for fuel cell application: Synthesis and characterization

    Publication Year: 2008, Page(s):36 - 46
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (2597 KB) | HTML iconHTML

    The proton conductivity of chemically cross-linked composite membranes consisting of poly(vinyl alcohol) (PVA) and silicotungstic acid (STA) prepared by solution casting as proton-conducting polymer electrolytes was investigated as a function of blending composition, cross-linking density, and temperature. The conductivity mechanism was investigated by using Impedance spectroscopy in the region be... View full abstract»

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  • Analysis of a nonlinear Mach-Zhender Interferometer

    Publication Year: 2008, Page(s):47 - 55
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (3129 KB) | HTML iconHTML

    In the present paper, a detailed investigation on the switching behavior of a nonlinear Mach-Zhender Interferometer (NMZI) has been carried out using Beam Propagation Method (BPM). A NMZI is the Mach-Zehnder Interferometer (MZI) in which one arm is made-up of a nonlinear material. Considering one optical input (one beam), a thorough investigation on input verses output characteristic has been carr... View full abstract»

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  • A comparative study of polyanthranilic acid (PANA)/metal and Polycarbazole (PCz)/metal contacts for electronic and optoelectronic applications

    Publication Year: 2008, Page(s):56 - 64
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1838 KB) | HTML iconHTML

    We report fabrication and characterization of an organic photodetector (OPD) in the form of ITO coated glass/Polycarbazole (PCz)/Al Schottky contact for application in visible region and Al/PANA/ITO, Ti/PANA/ITO Schottky contacts of application in U.V. region. The current voltage (I-V) characteristics of the devices were measured by using microprobe arrangement. The performance parameters of ITO/P... View full abstract»

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  • Conduction mechanism in electronic polymers: Effect of morphology

    Publication Year: 2008, Page(s):65 - 74
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (4825 KB) | HTML iconHTML

    In this paper we report the mechanism of charge transport in conducting polymers. The basic concept of defect states in conjugated polymers (solitons, polarons and bipolarons in conjugated polymers) are briefly discussed. This paper addresses sources of disorder in conducting polymers depend on inhomogeneous doping and also the synthesis routes. We synthesized the conjugated polymers by different ... View full abstract»

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  • Effect of post annealing on structural properties of ZnO thin films deposited by thermal evaporation technique

    Publication Year: 2008, Page(s):75 - 83
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (5921 KB) | HTML iconHTML

    The thermal evaporation deposition technique was used to produce zinc oxide thin film onto p-type silicon substrate at room temperature. The prepared film was post annealed at different temperature from 400 to 800degC in O2 ambient atmosphere for 20 minutes. The effect of post annealing temperature on the structural properties and surface morphological of ZnO thin films have been studie... View full abstract»

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  • Novel strained layer superlattices for long wavelength IR detectors

    Publication Year: 2008, Page(s):84 - 93
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (2244 KB) | HTML iconHTML

    In recent years a great deal of interest has been focused in selecting III-V heterostructure materials for infrared detection applications by carefully altering their electrical, optical and transport properties with the help of atomic disorder, biaxial strain, space charge and the materials geometry. Among others, the superlattices (SLs) composed of InAs and GaSb layers with type II band alignmen... View full abstract»

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  • Performance optimization of Ge/SiGe MQW-Electroabsorption Modulator for optical short pulse generation

    Publication Year: 2008, Page(s):94 - 101
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (2002 KB) | HTML iconHTML

    The electroabsorption modulators made of InGaAsP/InP multiple quantum wells (MQWs) are used in optical fibre communication links. EAMs also find applications in various other areas, an example being narrow pulse generation. The pulse width of generated pulses depends on EA modulator extinction efficiency. The operation of the devices is based on quantum confined Stark effect (QCSE). There have bee... View full abstract»

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  • General model for the computation of energy Eigen values in aperiodic multiple quantum well structures

    Publication Year: 2008, Page(s):102 - 107
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (973 KB) | HTML iconHTML

    A general model for computation of energy states in aperiodic multiple quantum well (MQW) structures has been proposed. The MQWs are aperiodic and asymmetric with varying well and barrier widths. The tunnelling probability of the electrons through these aperiodic barriers has been studied by assuming coupling between adjacent pairs of wells. Effect of the barrier dimensions on tunnelling propertie... View full abstract»

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  • Laser beam shaping

    Publication Year: 2008, Page(s):108 - 109
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (352 KB) | HTML iconHTML

    This presentation deals with the theoretical and practical aspects of the design and fabrication of laser beam shapers. Laser beam shaping methods are categorized as: (i) external shaping which is applied to an existing laser beam; and (ii) internal cavity shaping which is an integral part of the laser cavity. An exact diffraction-based algorithm is developed for the design of the optical phase fi... View full abstract»

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