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Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

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Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Date 11-13 Aug. 1997

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1997 digest of the ieee/leos summer topical meeting: vertical-cavity lasers/technologies for a global information infrastructure/wdm components technology/advanced semiconductor lasers and applications/gallium nitride materials, processing, and devices [front matter and table of contents]

New materials and process technologies for vertical cavity surface emitting lasers

VCSEL research, development and applications at Honeywell

Future prospects of VCSELs: industrial view

Towards microcavity vertical cavity lasers: aperture and cavity design for high efficiency and low threshold

Uniform and high power selectively oxidized 8/spl times/8 VCSEL array

High efficiency 850 nm wavelength GaAs VCSELs

850 nm VCSEL's with buried Al/sub x/O/sub y/ current apertures

Visible VCSELs: recent advances and applications

Self-pulsating VCSEL with controllable quantum-well saturable absorber

Tera bytes optical disk with electric tracking control using micro-cavity VCSEL array and PD array

Integrated VCL/PIN arrays for optical computing applications

Hybrid integration of VCSELs to foundry fabricated smart pixels

4/spl times/4 broadband optoelectronic switch using VCSELs

VCSEL based high performance ATM switch

Low-threshold continuous-wave operation of an oxide-confined vertical-cavity surface-emitting laser based on a quantum dot active region and half-wave cavity

Dynamically stable polarization characteristics of oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)A substrate

Multiple-wavelength VCSEL arrays on patterned substrates

p-type modulation carbon-doping to InGaAs/AlGaAs quantum wells by MOCVD auto-doping for surface-emitting lasers

AlGaAsSb/AlAsSb Bragg mirrors on InP for 1.3 and 1.55 /spl mu/m vertical cavity surface emitting lasers

120/spl deg/C pulsed operation from a 1.55 /spl mu/m vertical-cavity laser

High performance 1.3 /spl mu/m vertical-cavity surface-emitting lasers with oxygen-implanted confinement regions and wafer-bonded mirrors

Long wavelength VCSELs with monolithic integrated GaInAsP/lnP mirror

Metamorphic GaAs/AlAs Bragg mirrors deposited on InP for 1.3/1.55 /spl mu/m vertical cavity losers

High-speed vertical cavity surface emitting lasers

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