Advanced Thermal Processing of Semiconductors, 2008. RTP 2008. 16th IEEE International Conference on
Date Sept. 30 2008-Oct. 3 2008
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[Copyright notice]
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PDF (124 KB)
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Steering Committee
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RTP conference achievement awards
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PDF (970 KB)
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17th IEEE international conference on advanced thermal processing of semiconductors RTP 2009 workshop metrology for ion-implant and diffusion engineering
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PDF (233 KB)
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Contents
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Basic strain physics
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S&D salicidation for advanced CMOS technology: Ge, SiGe, Si:C, and sSibased devices
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High mobility and advanced channels materials
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Recent advances in stress and activation engineering for high-performance logic transistors
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New metrologies for annealing of USJs and thin films
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Ellipsometry on ion implantation induced damage
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PDF (5751 KB)
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Optical interference effect on chip’s temperature distribution in the optical annealing process
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PDF (1096 KB)
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Annealing behavior of clustercarbon™ implants
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PDF (1537 KB)
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Plasma doping control by mass metrology
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PDF (684 KB)
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Temperature measurement in RTP: Past and future
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Characterization of deformation induced by micro-second laser anneal using CGS interferometry
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Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctions
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Ultrashallow doping by excimer laser drive-in of RPCVD surface deposited arsenic monolayers
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PDF (2517 KB)
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Enhancing tensile stress and source/drain activation with Si:C with innovations in ion implant and millisecond laser spike annealing
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PDF (10232 KB)
