2008 15th International Conference on Mixed Design of Integrated Circuits and Systems

19-21 June 2008

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  • Proceedings of the 15th international conference Mixed design of integrated circuits and systems

    Publication Year: 2008, Page(s):c1 - c2
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  • Proceedings of the 15th international conference Mixed design of integrated circuits and systems [front matter]

    Publication Year: 2008
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  • Preface

    Publication Year: 2008, Page(s):3 - 4
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  • International Programme Committee

    Publication Year: 2008, Page(s):5 - 6
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  • Table of contents

    Publication Year: 2008, Page(s):7 - 13
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  • [Blank page]

    Publication Year: 2008, Page(s): 14
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  • General invited papers

    Publication Year: 2008, Page(s):15 - 16
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  • High Performance Computing in nanoscale electrothermal modeling and simulations

    Publication Year: 2008, Page(s):17 - 21
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (627 KB) | HTML iconHTML

    The High Performance Computing (HPC) become a more and more popular tool in the numerical modeling and simulations of the complex systems. In the case of electro-thermal analysis of any electronics device a most precise approach is this of complex system which is very well situated to the HPC applications. At the nanoscale electro-thermal analysis there’s very often impossible to avoid mass... View full abstract»

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  • [Blank page]

    Publication Year: 2008, Page(s): 22
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  • LTCC in microelectronics, microsystems, and sensors

    Publication Year: 2008, Page(s):23 - 37
    Cited by:  Papers (1)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (1726 KB) | HTML iconHTML

    Low Temperature Cofired Ceramic (LTCC) is one of the most significant developments in microelectronics, microsystems, and sensors integration. The formerly-flat board technology involves a materials and process suite that lends itself to shaped and stacked 3D packaging and, within the board, enclosed unfilled volumes and unconventional components. The documentation of LTCC microsystem and sensor a... View full abstract»

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  • [Blank page]

    Publication Year: 2008, Page(s): 38
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  • The HiSIM compact model family for integrated devices containing a surface-potential MOSFET core

    Publication Year: 2008, Page(s):39 - 50
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (855 KB) | HTML iconHTML

    HiSIM (Hiroshima university Starc Igfet Model) is the name of a surface-potential-based compact model for advanced sub-100nm scale MOSFET, which we are developing since more than a decade. HiSIM has evolved into one of the worlds leading MOSFET models for circuit simulation, practically applied by the semiconductor industry. More recently, the HiSIM approach of a consistently potential-based model... View full abstract»

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  • Compact modeling and characterization of Nano CMOS technologies

    Publication Year: 2008, Page(s):51 - 52
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  • Analytical modeling of the electrostatic potential in MOS devices by conformal mapping

    Publication Year: 2008, Page(s):53 - 58
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (225 KB) | HTML iconHTML

    In this paper we summarize the basics of the conformal mapping technique and demonstrate its usefulness to two-dimensional bulk MOS transistor modeling. Furthermore we present an analytical technique, which allows to apply the 2D conformal mapping technique to the 3D potential problem in a triple-gate device. Herewith model equations for potential barrier, subthreshold slope and threshold voltage ... View full abstract»

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  • Development of multi-gate mosfet models for circuit simulation with a compact modeling platform

    Publication Year: 2008, Page(s):59 - 64
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (447 KB) | HTML iconHTML

    Research is reported that aims at a framework for efficient development of multi-gate MOSFET models for circuit simulation and is carried out in an international collaboration among different research teams. A common platform for compact-model development, based on the Verilog-A language, is also constructed to verify as well as to efficiently merge the individual contributions from each collabora... View full abstract»

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  • Electrical characterization of FinFETS

    Publication Year: 2008, Page(s):65 - 69
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (464 KB) | HTML iconHTML

    A methodology of FinFETs characterization based on electrical characteristics of FinFET devices have has been proposed. The measured channel and gate current vs voltage characteristics of sets of devices with different fin width have been used for evaluation of the FinFETs parameters. Namely, a channel current data have been used for estimation of threshold voltage, transconductance coefficient, e... View full abstract»

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  • [Blank page]

    Publication Year: 2008, Page(s): 70
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  • Electrical characterization of MOSFETS with ultrathin SiON gate dielectric

    Publication Year: 2008, Page(s):71 - 74
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (357 KB) | HTML iconHTML

    The aim of this paper is extensive electrical characterization of MOS devices with ultrathin SiON gate dielectric. I-V characteristics are measured and basic transistor parameters (threshold voltage, DIBL, subthreshold swing and series S/D resistance) are extracted and their dependence on channel length investigated. Moreover, the dependence of gate current on channel length and the quality of the... View full abstract»

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  • Modeling of high-voltage NMOS transistors using extended BSIM3 model

    Publication Year: 2008, Page(s):75 - 80
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (296 KB) | HTML iconHTML

    This paper presents a procedure for modeling and electrical parameter extraction of high-voltage NMOS transistors from the 1.2um CMOS/pressure sensor process. The well known and very robust Berkeley BSIM3 model was applied as a basis for modeling. Unfortunately BSIM3 does not include such specific high-voltage effects as drain extension, quasi-saturation and self-heating. In order to account for t... View full abstract»

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  • Noise optimization of fast charge sensitive amplifier in submicron technology for low power application

    Publication Year: 2008, Page(s):81 - 84
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (291 KB) | HTML iconHTML

    Charge sensitive amplifiers (CSA) are widely used in processing the signals from particle and X-ray detectors in different imaging techniques in medicine, biology, material science or physics. The requirements for imaging techniques are going in the direction of dense array of sensors, with fast and low power readout electronics designed in submicron CMOS technology. One of the critical parameters... View full abstract»

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  • TCAD modeling and characterization of short-range variations in multiple-gate devices and circuit blocks

    Publication Year: 2008, Page(s):85 - 90
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (580 KB) | HTML iconHTML

    Short-range process variations such as line-edge roughness (LER) and random dopant fluctuations (RD) are extremely critical in aggressively scaled devices. In this work, techniques to incorporate such variations into Technology Computer-Aided Design (TCAD) simulations are discussed. Different statistical approaches are considered, including Monte Carlo and propagation of variance techniques, which... View full abstract»

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  • CARE Project

    Publication Year: 2008, Page(s):91 - 92
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  • A novel approach for real time neutron radiation monitoring based on the bubble dosimeter

    Publication Year: 2008, Page(s):93 - 96
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (324 KB) | HTML iconHTML

    Radiation can cause malfunctions and limited life on the electronic systems. For that reason radiation monitoring system plays a key role in estimating the danger and life time of the electronic systems operating in the radiation environment. The neutron radiation online monitoring system based on the bubble dosimeter is presented. Device was tested at DESY research centre in Hamburg with americiu... View full abstract»

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  • Application of precision low frequency signal generation as intermediate frequency for upconversion in particle accelerator field control

    Publication Year: 2008, Page(s):97 - 100
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (325 KB) | HTML iconHTML

    Modern particle accelerators [9] have very strict requirements for controlling signal. Commonly used in this application analog vector modulators influents on quality of signal. Adaptive algorithm controlling field parameters can compensate imprecision, but this will influent on stabilities and adaptation range. This paper presents possibility of generating high frequency signal using low frequenc... View full abstract»

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  • ATCA Carrier Board with IPMI supervisory circuit

    Publication Year: 2008, Page(s):101 - 105
    Cited by:  Papers (2)
    IEEE is not the copyright holder of this material | Click to expandAbstract | PDF file iconPDF (359 KB) | HTML iconHTML

    Linear accelerators, like FLASH or X-FEL need to fulfill strict requirements concerning high reliability and availability. Therefore, both hardware and software should be designed in such a way to ensure high reliability. The Advanced Telecommunications Computing Architecture standard offers high performance compute platform which allows to design reliable systems that can meet the requirements of... View full abstract»

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