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2008 26th International Conference on Microelectronics

11-14 May 2008

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  • 2008 26th international conference on microelectronics

    Publication Year: 2008, Page(s): c1
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  • 27th international conference on microelectronics

    Publication Year: 2008, Page(s): I
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  • 2008 26th international conference on microelectronics

    Publication Year: 2008, Page(s): i
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  • [Copyright notice]

    Publication Year: 2008, Page(s): ii
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  • Steering Committee

    Publication Year: 2008, Page(s):iii - iv
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  • Contents

    Publication Year: 2008
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  • MIEL 2006 Best Paper Awards

    Publication Year: 2008, Page(s): xv
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  • Workshop nanotechnologies

    Publication Year: 2008, Page(s): 1
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  • Sculptured—thin—film plasmonic—polaritonics

    Publication Year: 2008, Page(s):3 - 8
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (310 KB) | HTML iconHTML

    The solution of a boundary-value problem formulated for the Kretschmann configuration shows that the phase speed of a surface-plasmon-polariton (SPP) wave guided by the planar interface of a sufficiently thin metal film and a sculptured thin film (STF) depends on the vapor incidence angle used while fabricating the STF by physical vapor deposition. Furthermore, it may be possible to engineer the p... View full abstract»

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  • Role of plasma processing in nanobiotechnologies

    Publication Year: 2008, Page(s):9 - 10
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (255 KB) | HTML iconHTML

    One of the major challenges for the development of new tools for biological analysis relies on the ability to design advanced surfaces with appropriate surface chemistries and topography from micrometers down to few nanometers. For instance, structuring surfaces with adhesive and non adhesive zone in order to preferentially guide the cell growth is one of the most interesting tools for the develop... View full abstract»

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  • Micro- and nanosystems based on vibrating structures

    Publication Year: 2008, Page(s):11 - 18
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (694 KB) | HTML iconHTML

    Invention of the scanning force microscope in 1986 and development of micro and nanofabrication technologies yielded a new generation of vibration based miniature sensors of physical, chemical and biological parameters, with sensitivity which could not be achieved before. This promoted again the research of micro and nanoelectromechanical systems (MEMS and NEMS) in the fields that have been domina... View full abstract»

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  • Top down nano technologies in production of integrated circuits and surface modification of materials

    Publication Year: 2008, Page(s):19 - 24
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (670 KB) | HTML iconHTML

    As microelectronic devices continue to shrink and process requirements become ever more stringent, plasma modeling and simulation becomes increasingly more attractive as a tool for design, control and optimization of plasma reactors. Nowadays, plasma- etching processes are expected to produce patterns from the nanometer to the micrometer range. Charging effects in the etching of dielectrics due to... View full abstract»

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  • Silicon based nano-MOSFET: New materials, new device architectures, and new challenges for device simulation

    Publication Year: 2008, Page(s):25 - 29
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (230 KB) | HTML iconHTML

    In this paper selected applications of Monte Carlo simulation of semi-classical carrier transport are reviewed, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials. View full abstract»

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  • Silicon quantum dot devices

    Publication Year: 2008, Page(s):31 - 34
    Cited by:  Patents (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (1272 KB) | HTML iconHTML

    Quantum dot structures, where electrons are confined three-dimensionally in the below 10 nm scale, show characteristics quite different from conventional bulk structures. Recent progress in the fabrication technology of silicon nanostructures has made possible observations of novel electrical and optical properties of silicon quantum dots, such as single electron tunneling, ballistic transport, vi... View full abstract»

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  • Nanofabrication Simulation as a processes research tool

    Publication Year: 2008, Page(s):35 - 41
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (867 KB) | HTML iconHTML

    Nanofabrication simulation is evolving continuously. Ever higher and faster digital computer calculating and processing power automates further the algorithms. General simulators can tackle mainstream processes. Special cases call for individualized simulation approach. Information of the physical process and initial conditions of the optical line of positive photoresist on reflective substrate is... View full abstract»

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  • Plenary Sessions

    Publication Year: 2008, Page(s): 43
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  • Global green energy conversion revolution in 21st century through solid state devices

    Publication Year: 2008, Page(s):45 - 54
    Cited by:  Papers (9)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (688 KB) | HTML iconHTML

    Rising demands of energy in emerging economies coupled with the green house gas emissions related problems around the globe have provided a unique opportunity of exploiting the advantages offered by solid state devices (photovoltaic devices, thermoelectric devices, light emitting devices etc.) for green energy conversion. Similar to cell phones, power generation by photovoltaics (PV) can reach ove... View full abstract»

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  • Counting single electrons in a CMOS circuit

    Publication Year: 2008, Page(s):55 - 60
    Cited by:  Papers (3)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (830 KB) | HTML iconHTML

    We describe a device compatible with CMOS technology, which permits to detect a single charge by multiplying it to an easily measurable level. The device is a bipolar transistor optimized for the operation in the Geiger avalanche mode. A single electron, injected through the base- emitter junction, triggers avalanche breakdown in the collector- base junction. The breakdown is then rapidly stopped ... View full abstract»

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  • SiC on Si as platform technology

    Publication Year: 2008, Page(s): 61
    Cited by:  Papers (1)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (65 KB)

    It can be stated that silicon carbide, in particular its 4H and 6H polytypes, has matured as a semiconductor material. Device-quality wafers up to 100 mm in diameter are commercially available, enabling the development of discrete devices for applications such as power and RF electronics and providing substrates for GaN-based optoelectronics. Perhaps the most intriguing electronic property of sili... View full abstract»

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  • Electronics from the bottom up: An approach to 21st century electronic devices

    Publication Year: 2008, Page(s):63 - 67
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (266 KB) | HTML iconHTML

    The dimensions of electronic devices are now firmly in the nanometer regime, but we continue to think about devices and to educate the next generation of device engineers using concepts that were developed for micrometer sized devices. This presentation will outline a new approach and argue that it is time to incorporate new ways of thinking in device engineering research, practice, and education. View full abstract»

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  • Comprehensive modeling of electromigration induced interconnect degradation mechanisms

    Publication Year: 2008, Page(s):69 - 76
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (688 KB) | HTML iconHTML

    The reliability requirements on modern interconnect and the physical complexity of electromigration phenomena demand close and systematic application of experimental and TCAD based methods for the assessment of interconnect failure and the development of sophisticated layout design rules. We present and discuss state-of-the art electromigration models for both phases of failure development: void n... View full abstract»

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  • The minimum energy for a one bit computation: A proof of the Landauer limit

    Publication Year: 2008, Page(s):77 - 80
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (192 KB) | HTML iconHTML

    This paper describes a design, based on adiabatic digital circuit approach, where the difference between an irreversible and a reversible logical use of a gate gives rise to the theoretical Landauer limit for a one bit computation. View full abstract»

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  • Session Nanotechnologies

    Publication Year: 2008, Page(s): 81
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  • Modeling and measurement of optical response of 1D array of metallic nanowires for sensing and detection application

    Publication Year: 2008, Page(s):83 - 86
    Cited by:  Patents (30)
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (434 KB) | HTML iconHTML

    We have investigated 1D nanosized metallic wires with subwavelength dimensions in which localized surface plasmon (LSP) and surface plasmon polariton (SPP) can exist. Elaboration of the localized surface plasmon resonance (LSPR) based device for scaling down to nanometric dimensions, which provide significant flexible design is the aim of this paper. Modeling of the interaction of the incident lig... View full abstract»

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  • Metal nanowire arrays with ultralow or negative effective permittivity for adsorption-based chemical sensing

    Publication Year: 2008, Page(s):87 - 90
    Request permission for commercial reuse | Click to expandAbstract | PDF file iconPDF (322 KB) | HTML iconHTML

    We investigated wire-mesh media with plasmalike dispersion of dielectric permittivity as a potential medium for nanoplasmonic sensors utilizing adsorption of chemical, biochemical or biological analytes. Such structures belong to the ultra-low refractive index metamaterials and are typically used as one of the building blocks for zero- or negative index metamaterials. We analyzed a 2D array or con... View full abstract»

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